Preparation of Advanced Window Layer for Chalcopyrite Thin Film Photovoltaic Devices

黄铜矿薄膜光伏器件先进窗口层的制备

• 批准号: 09680486
• 负责人: YAMAGUCHI Toshiyuki
• 金额: $ 2.11万
• 依托单位: Wakayama National College of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09680486/
• 关键词: (Cd, Zn)S; Window Laver; Chemical Bath Deposition; Lattice Matching; Window Effect; Photovoltaic Device; 硫化カドミニウム亜鉛

The photovoltaic power system has received considerable attention to solve the environmental problems in the worldwide scale. It is very important to develop the solar cells with low cost and high efficiency. The thin film of chalcopyrite Cu (In, Ga)Se_2 is one of the potential candidates for high-efficiency solar cells, because its efficiency is over 17%. For improvement in Cu(In, Ga)Se_2 based photovoltaic device performance, the lattice matching window material to Cu(In, Ga)Se_2 must be developed and the window absorption loss should be small. The (0001) plane of the wurtzite (Cd, Zn)S alloy system gives the best lattice matching to the (112) plane of Cu (In, Ga)Se_2 over the whole range of [Ga]/([In]+[Ga]) ratio. In this study, my goal is the preparation and characterization of (Cd, Zn)S thin films by chemical bath deposition. I propose the process for preparation of (Cd, Zn)S thin films that all the reactants are mixed after heating to 80ﾟC and the ammonia used as a complexing agent is simultaneously added. The incorporation of Zn into the film and the band gap of (Cd, Zn)S thin films were controlled by varing the amounts of ammonia. Thin films of (Cd, Zn)S were prepared by the improved process which was optimized with the amounts of ammonia playing an important role. X-ray diffraction peaks for the deposited thin films were assigned to diffraction lines from wurizite (Cd, Zn)S.The [Zn]/([Cd]+[Zn]) ratio and the band gaps in the thin films could be controlled by varying the mixture ratio of CdI_2 and ZnI_2 solutions used as reactants. The variation of band gaps yielded the bowing parameter of 0.724 eV.Cu(In, Ga)Se_2 solar cells with the advanced window layer (Cd, Zn)S were prepared. This device showed an open curcuit voltage of 304mV, a short curcuit current of 37.3mA/cm^2, a fill factor of 0.43 3 and an efficiency of 4.91%. Therefore, I proved that the replacement of CdS with (Cd, Zn)S led to the increase in short curcuit current of solar cell.

光伏发电系统为解决世界范围内的环境问题而受到高度重视。开发低成本、高效率的太阳能电池非常重要。黄铜矿Cu(In,Ga)Se_2薄膜是高效太阳能电池的潜在候选者之一，其效率超过17%。为了提高Cu(In,Ga)Se_2基光伏器件的性能,必须开发与Cu(In,Ga)Se_2晶格匹配的窗口材料并且窗口吸收损耗要小。纤锌矿(Cd,Zn)S合金系的(0001)面在整个[Ga]/([In]+[Ga])比范围内与Cu(In,Ga)Se_2的(112)面具有最佳的晶格匹配。在这项研究中，我的目标是通过化学浴沉积制备和表征 (Cd, Zn)S 薄膜。我提出了(Cd,Zn)S薄膜的制备方法，将所有反应物加热至80℃后混合，同时添加用作络合剂的氨。通过改变氨的量来控制薄膜中 Zn 的掺入以及 (Cd, Zn)S 薄膜的带隙。 (Cd, Zn)S 薄膜是通过改进的工艺制备的，该工艺经过优化，其中氨的量起着重要作用。沉积薄膜的 X 射线衍射峰归属于纤锌矿 (Cd, Zn)S 的衍射线。薄膜中的 [Zn]/([Cd]+[Zn]) 比和带隙可以通过改变用作反应物的 CdI_2 和 ZnI_2 溶液的混合比例来控制。带隙的变化产生了0.724 eV的弯曲参数。制备了具有先进窗口层(Cd,Zn)S的Cu(In,Ga)Se_2太阳能电池。该器件的开路电压为304mV，短路电流为37.3mA/cm^2，填充因子为0.43 3，效率为4.91%。因此，我证明用(Cd,Zn)S替代CdS会导致太阳能电池的短路电流增加。

项目成果

山口 利幸: "カルコパイライト型薄膜太陽電池の試作" 和歌山工業高等専門学校研究紀要. 33号. 23-27 (1998)

Toshiyuki Yamaguchi：“黄铜矿薄膜太阳能电池的原型”和歌山国立工业大学研究公报 33, 23-27 (1998)。

竹内 伸次: "セレン化法によるCu(In,Ga)Se_2薄膜への窓層形成前処理の効果" 平成9年度電気関係学会関西支部連合大会講演論文集. G242-G242 (1997)

Shinji Takeuchi：“通过硒化方法在Cu(In,Ga)Se_2薄膜上形成窗口层的预处理的效果”1997年日本电气工程师协会关西分会会议记录G242-G242(1997)。

山口 利幸: "カルコパイライト型薄膜太陽電池の窓効果改善型バッファー層の作製" 三元多元機能性材料研究会平成9年度成果報告集. 103-106 (1998)

Toshiyuki Yamaguchi：“黄铜矿型薄膜太阳能电池具有改善窗口效应的缓冲层的制备”三元多功能材料研究组1997年结果报告103-106（1998）。

竹内 伸次: "セレン化法によるCu(In,Ga)Se_2薄膜への窓層形成前処理の効果" 平成9年電気関係学会関西支部連合大会講演論文集. G242-G242 (1997)

Shinji Takeuchi：“通过硒化方法对 Cu(In,Ga)Se_2 薄膜进行预处理的效果”1997 年电气工程学会关西分会会议记录 G242-G242 (1997)。

山口 利幸: "Preparation and characterization of(Cd,Zn)S thin films by chemical bath deposiion for photovoltaic devices" Thin Solid Films. 印刷中.

Toshiyuki Yamaguchi：“光伏器件化学浴沉积 (Cd,Zn)S 薄膜的制备和表征”固体薄膜正在出版。