Fabrication of Advanced Thin Film Photovoltaic Materials using Ternary Compounds as Evaporation Materials and Trial Production of their Solar Cells

以三元化合物为蒸发材料的先进薄膜光伏材料的制备及其太阳能电池的试制

• 批准号: 16560284
• 负责人: YAMAGUCHI Toshiyuki
• 金额: $ 2.37万
• 依托单位: Wakayama National College of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560284/
• 关键词: Solar cell; Chalcopyrite; Ternary compound; Thin film; Sequential evaporation

In this research, chalcopyrite Cu(In,Ga)(S,Se)_2 thin films were prepared by the new process applicable to the large scale production, which was the sequential evaporation from ternary compounds. Moreover, their solar cells were manufactured by way of trial and their properties were investigated.(1)The new process to prepare Cu(In,Ga)Se_2 thin films was examined. In the first step, Cu-In-Ga-Se layer was evaporated from CuInSe_2 and CuGaSe_2 ternary compounds onto the Mo/soda-lime glass substrate. In the second step, In-Se layer was deposited from In_2Se_3 compound at a substrate temperature of 490℃. Finally, only Se was effused at the same substrate temperature. The surface composition of Cu(In,Ga)Se_2 thin film could be controlled in the optimum range by adjusting the amount of In_2Se_3.(2)Cu(In,Ga)(S,Se)_2 thin films were prepared by simultaneously evaporating In_2Se_3 and In_2S_3 compounds in the second step of the above process. The S content in Cu(In,Ga)(S,Se)_2 thin films was inc … More reased with increasing the amount of In_2S_3 in the second step.(3)Cu(In,Ga)(S,Se)_2 thin films were prepared by thermal crystallization from CuInGaSe/CuGaSe stacked precursor in S and Se atmosphere. The precursors were prepared by evaporating consecutively from the CuGaSe_2 and Cu(In,Ga)Se_2 compounds. The grain sizes in Cu(In,Ga)(S,Se)_2 thin films were increased with increasing the crystallization temperature.(4)The best solar cell using Cu(In,Ga)Se_2 thin film prepared by the new process demonstrated Voc=330mV, Isc=28.3mA/cm^2, FF=0.461 and Eff=4.31% without AR-coating. The open circuit voltage in Cu(In,Ga)(S,Se)_2 thin film solar cell was improved by using In_2S_3 compound as a S source.As a result, the method to produce Cu(In,Ga)(S,Se)_2 thin films from ternary compounds was clarified for application to fabricate an advanced thin film solar cell with low cost and high efficiency. Moreover, the trial production of their solar cells suggested the future direction of research for improvement in solar cell performance. Less

本研究采用适合于大规模生产的新工艺--三元化合物顺序蒸发法制备了黄铜矿Cu（In，Ga）（S，Se）_2薄膜。并对其太阳能电池进行了试制和性能测试。（1）研究了制备Cu（In，Ga）Se_2薄膜的新工艺。在第一步中，从CuInSe_2和CuGaSe_2三元化合物蒸发Cu-In-Ga-Se层到Mo/钠钙玻璃衬底上。第二步，在490℃的衬底温度下，用In_2Se_3化合物沉积In-Se层。最后，在相同的衬底温度下，只有Se渗出。通过调节In_2Se_3的含量，可以将Cu（In，Ga）Se_2薄膜的表面成分控制在最佳范围内。（2）在上述工艺的第二步中，采用同时蒸发In_2Se_3和In_2S_3的方法制备了Cu（In，Ga）（S，Se）_2薄膜。Cu（In，Ga）（S，Se）_2薄膜中的S含量随温度的升高而增加 ...更多信息 随着第二步In_2S_3加入量的增加，反应温度降低。（3）以CuInGaSe/CuGaSe叠层前驱体为原料，在S和Se气氛下热晶化制备了Cu（In，Ga）（S，Se）_2薄膜。以CuGaSe_2和Cu（In，Ga）Se_2化合物为原料，采用连续蒸发法制备了前驱体。Cu（In，Ga）（S，Se）_2薄膜的晶粒尺寸随晶化温度的升高而增大。（4）采用新工艺制备的Cu（In，Ga）Se_2薄膜作为太阳电池的最佳材料，在不进行抗反射膜的情况下，其Voc= 330 mV，Isc=28.3mA/cm ~ 2，FF=0.461，Eff=4.31%。采用In 2S 3化合物作为硫源，提高了Cu（In，Ga）（S，Se）2薄膜太阳电池的开路电压，从而阐明了由三元化合物制备Cu（In，Ga）（S，Se）2薄膜的方法，为制备低成本、高效率的新型薄膜太阳电池奠定了基础。此外，他们的太阳能电池的试制表明了未来太阳能电池性能改进的研究方向。少

项目成果

Examination of Fabrication Process for Cu(In,Ga)(S,Se)_2 Thin Film Solar Cells

Cu(In,Ga)(S,Se)_2薄膜太阳能电池制造工艺研究

• 发表时间: 2006
• 期刊: Proceedings of 2006 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments
• 作者: Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi
• 通讯作者: Toshiyuki Yamaguchi

Cu(In,Ga)Se_2薄膜へのNa添加の効果(II)

Na添加对Cu(In,Ga)Se_2薄膜的影响(II)

• 发表时间: 2006
• 期刊: 平成18年電気関係学会関西支部連合大会講演論文集
• 作者: Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;服部 充宏;Javier Camargo Luran
• 通讯作者: Javier Camargo Luran

Preparation of Cu(In,Ga)Se_2 thin films by vacuum deposition from ternary compounds (III)

三元化合物真空沉积制备Cu(In,Ga)Se_2薄膜(III)

• 发表时间: 2006
• 期刊: Extended Abstracts (The 67th Autumn Meeting, 2006)(The Japan Society of Applied Physics)
• 作者: Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;服部 充宏;Javier Camargo Luran;吉田 晃周;沼田 和也;谷口 喜浩;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi
• 通讯作者: Toshiyuki Yamaguchi

Preparation of Cu(In,Ga)Se_2 thin films by sequential evaporation and their photovoltaic device applications (II)

顺序蒸发制备Cu(In,Ga)Se_2薄膜及其光伏器件应用(二)

• 发表时间: 2005
• 期刊: Record of the 2005 Kansai-Section Joint Convention of Institutes of Electrical Engineering, Japan
• 作者: Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;服部 充宏;Javier Camargo Luran;吉田 晃周;沼田 和也;谷口 喜浩;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Mitsuhiro Hatori;Javier Camargo Luran;Akihiro Yoshida;Kazuya Numata;Yoshihiro Taniguchi;Toshiyuki Yamaguchi;山口 利幸;山口 利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口 利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;酒井誉平;平尾敏廣;服部充宏;Javier Camargo Luran;吉田晃周;Akihiro Yoshida;Toshiyuki Yamaguchi;Yohei Sakai
• 通讯作者: Yohei Sakai

Preparation of Cu(In,Ga)(S,Se)_2 thin films by thermal crystallization in Se/S atmosphere (II)

Se/S气氛中热结晶制备Cu(In,Ga)(S,Se)_2薄膜(II)

• 发表时间: 2005
• 期刊: Record of the 2005 Kansai-Section Joint Convention of Institutes of Electrical Engineering, Japan
• 作者: Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;服部 充宏;Javier Camargo Luran;吉田 晃周;沼田 和也;谷口 喜浩;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Mitsuhiro Hatori;Javier Camargo Luran;Akihiro Yoshida;Kazuya Numata;Yoshihiro Taniguchi;Toshiyuki Yamaguchi;山口 利幸;山口 利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口 利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;酒井誉平;平尾敏廣;服部充宏;Javier Camargo Luran;吉田晃周;Akihiro Yoshida;Toshiyuki Yamaguchi;Yohei Sakai;Toshihiro Hirao
• 通讯作者: Toshihiro Hirao