Fabrication of Advanced Thin Film Photovoltaic Materials using Ternary Compounds as Evaporation Materials and Trial Production of their Solar Cells

以三元化合物为蒸发材料的先进薄膜光伏材料的制备及其太阳能电池的试制

基本信息

  • 批准号:
    16560284
  • 负责人:
  • 金额:
    $ 2.37万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    2004
  • 资助国家:
    日本
  • 起止时间:
    2004 至 2006
  • 项目状态:
    已结题

项目摘要

In this research, chalcopyrite Cu(In,Ga)(S,Se)_2 thin films were prepared by the new process applicable to the large scale production, which was the sequential evaporation from ternary compounds. Moreover, their solar cells were manufactured by way of trial and their properties were investigated.(1)The new process to prepare Cu(In,Ga)Se_2 thin films was examined. In the first step, Cu-In-Ga-Se layer was evaporated from CuInSe_2 and CuGaSe_2 ternary compounds onto the Mo/soda-lime glass substrate. In the second step, In-Se layer was deposited from In_2Se_3 compound at a substrate temperature of 490℃. Finally, only Se was effused at the same substrate temperature. The surface composition of Cu(In,Ga)Se_2 thin film could be controlled in the optimum range by adjusting the amount of In_2Se_3.(2)Cu(In,Ga)(S,Se)_2 thin films were prepared by simultaneously evaporating In_2Se_3 and In_2S_3 compounds in the second step of the above process. The S content in Cu(In,Ga)(S,Se)_2 thin films was inc … More reased with increasing the amount of In_2S_3 in the second step.(3)Cu(In,Ga)(S,Se)_2 thin films were prepared by thermal crystallization from CuInGaSe/CuGaSe stacked precursor in S and Se atmosphere. The precursors were prepared by evaporating consecutively from the CuGaSe_2 and Cu(In,Ga)Se_2 compounds. The grain sizes in Cu(In,Ga)(S,Se)_2 thin films were increased with increasing the crystallization temperature.(4)The best solar cell using Cu(In,Ga)Se_2 thin film prepared by the new process demonstrated Voc=330mV, Isc=28.3mA/cm^2, FF=0.461 and Eff=4.31% without AR-coating. The open circuit voltage in Cu(In,Ga)(S,Se)_2 thin film solar cell was improved by using In_2S_3 compound as a S source.As a result, the method to produce Cu(In,Ga)(S,Se)_2 thin films from ternary compounds was clarified for application to fabricate an advanced thin film solar cell with low cost and high efficiency. Moreover, the trial production of their solar cells suggested the future direction of research for improvement in solar cell performance. Less
本研究采用适合于大规模生产的新工艺--三元化合物顺序蒸发法制备了黄铜矿Cu(In,Ga)(S,Se)_2薄膜。并对其太阳能电池进行了试制和性能测试。(1)研究了制备Cu(In,Ga)Se_2薄膜的新工艺。在第一步中,从CuInSe_2和CuGaSe_2三元化合物蒸发Cu-In-Ga-Se层到Mo/钠钙玻璃衬底上。第二步,在490℃的衬底温度下,用In_2Se_3化合物沉积In-Se层。最后,在相同的衬底温度下,只有Se渗出。通过调节In_2Se_3的含量,可以将Cu(In,Ga)Se_2薄膜的表面成分控制在最佳范围内。(2)在上述工艺的第二步中,采用同时蒸发In_2Se_3和In_2S_3的方法制备了Cu(In,Ga)(S,Se)_2薄膜。Cu(In,Ga)(S,Se)_2薄膜中的S含量随温度的升高而增加 ...更多信息 随着第二步In_2S_3加入量的增加,反应温度降低。(3)以CuInGaSe/CuGaSe叠层前驱体为原料,在S和Se气氛下热晶化制备了Cu(In,Ga)(S,Se)_2薄膜。以CuGaSe_2和Cu(In,Ga)Se_2化合物为原料,采用连续蒸发法制备了前驱体。Cu(In,Ga)(S,Se)_2薄膜的晶粒尺寸随晶化温度的升高而增大。(4)采用新工艺制备的Cu(In,Ga)Se_2薄膜作为太阳电池的最佳材料,在不进行抗反射膜的情况下,其Voc= 330 mV,Isc=28.3mA/cm ~ 2,FF=0.461,Eff=4.31%。采用In 2S 3化合物作为硫源,提高了Cu(In,Ga)(S,Se)2薄膜太阳电池的开路电压,从而阐明了由三元化合物制备Cu(In,Ga)(S,Se)2薄膜的方法,为制备低成本、高效率的新型薄膜太阳电池奠定了基础。此外,他们的太阳能电池的试制表明了未来太阳能电池性能改进的研究方向。少

项目成果

期刊论文数量(160)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Examination of Fabrication Process for Cu(In,Ga)(S,Se)_2 Thin Film Solar Cells
Cu(In,Ga)(S,Se)_2薄膜太阳能电池制造工艺研究
Cu(In,Ga)Se_2薄膜へのNa添加の効果(II)
Na添加对Cu(In,Ga)Se_2薄膜的影响(II)
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;服部 充宏;Javier Camargo Luran
  • 通讯作者:
    Javier Camargo Luran
Preparation of Cu(In,Ga)Se_2 thin films by vacuum deposition from ternary compounds (III)
三元化合物真空沉积制备Cu(In,Ga)Se_2薄膜(III)
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;服部 充宏;Javier Camargo Luran;吉田 晃周;沼田 和也;谷口 喜浩;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi
  • 通讯作者:
    Toshiyuki Yamaguchi
Preparation of Cu(In,Ga)Se_2 thin films by sequential evaporation and their photovoltaic device applications (II)
顺序蒸发制备Cu(In,Ga)Se_2薄膜及其光伏器件应用(二)
  • DOI:
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;服部 充宏;Javier Camargo Luran;吉田 晃周;沼田 和也;谷口 喜浩;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Mitsuhiro Hatori;Javier Camargo Luran;Akihiro Yoshida;Kazuya Numata;Yoshihiro Taniguchi;Toshiyuki Yamaguchi;山口 利幸;山口 利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口 利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;酒井誉平;平尾敏廣;服部充宏;Javier Camargo Luran;吉田晃周;Akihiro Yoshida;Toshiyuki Yamaguchi;Yohei Sakai
  • 通讯作者:
    Yohei Sakai
Preparation of Cu(In,Ga)(S,Se)_2 thin films by thermal crystallization in Se/S atmosphere (II)
Se/S气氛中热结晶制备Cu(In,Ga)(S,Se)_2薄膜(II)
  • DOI:
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;服部 充宏;Javier Camargo Luran;吉田 晃周;沼田 和也;谷口 喜浩;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Mitsuhiro Hatori;Javier Camargo Luran;Akihiro Yoshida;Kazuya Numata;Yoshihiro Taniguchi;Toshiyuki Yamaguchi;山口 利幸;山口 利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口 利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;酒井誉平;平尾敏廣;服部充宏;Javier Camargo Luran;吉田晃周;Akihiro Yoshida;Toshiyuki Yamaguchi;Yohei Sakai;Toshihiro Hirao
  • 通讯作者:
    Toshihiro Hirao
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YAMAGUCHI Toshiyuki其他文献

YAMAGUCHI Toshiyuki的其他文献

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{{ truncateString('YAMAGUCHI Toshiyuki', 18)}}的其他基金

Study on fabrication of next-generation security and reliable environmental-friendly chalcogenide thin film solar cells
下一代安全可靠环保硫系薄膜太阳能电池制备研究
  • 批准号:
    17K07036
  • 财政年份:
    2017
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on fabrication of next-generation CZTSSe thin film solar cells using abundant elements in resources
利用资源丰富元素制备下一代CZTSSe薄膜太阳能电池的研究
  • 批准号:
    26420888
  • 财政年份:
    2014
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on efficiency enhancement of next-generation CIGS thin film solar cell by sequential evaporation
顺序蒸镀下一代CIGS薄膜太阳能电池效率提升研究
  • 批准号:
    22560314
  • 财政年份:
    2010
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on preparation of advanced CIGS thin film solar cell by sequential evaporation from ternary compounds
三元化合物连续蒸镀制备先进CIGS薄膜太阳能电池的研究
  • 批准号:
    19560328
  • 财政年份:
    2007
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on the Origin of Deep-sea Hydrothermal Vent Communities at the Lau Back-Arc Basin, Southwest Pacific
西南太平洋劳弧后盆地深海热液喷口群落起源研究
  • 批准号:
    15403014
  • 财政年份:
    2003
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Taxonomy and phylogeny of scalpellomorphan barnacles, Neolepadine collected from the deep-sea hydrothermal vents
从深海热液喷口收集的角形藤壶 Neolepadine 的分类学和系统发育
  • 批准号:
    14340154
  • 财政年份:
    2002
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Advanced Thin Film Photovoltaic Device using Chalcopyrite Semiconductor
使用黄铜矿半导体开发先进薄膜光伏器件
  • 批准号:
    14550314
  • 财政年份:
    2002
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Evaluation of Photovoltaic Performance by 40kW PV System Installed at National College of Technology and their Database
国立技术学院安装的40kW光伏系统光伏性能评估及其数据库
  • 批准号:
    13558058
  • 财政年份:
    2001
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Crustacean Biogeography in Equatorial area of Southeast Asia
东南亚赤道地区甲壳动物生物地理学
  • 批准号:
    11691172
  • 财政年份:
    1999
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Preparation of Advanced Window Layer for Chalcopyrite Thin Film Photovoltaic Devices
黄铜矿薄膜光伏器件先进窗口层的制备
  • 批准号:
    09680486
  • 财政年份:
    1997
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

相似海外基金

Enabling technology unlocking full potential of high bandgap chalcopyrite
使能技术释放高带隙黄铜矿的全部潜力
  • 批准号:
    DP230102463
  • 财政年份:
    2023
  • 资助金额:
    $ 2.37万
  • 项目类别:
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Efficient, durable and green chalcopyrite solar powered building steel
高效、耐用、绿色黄铜矿太阳能建筑钢
  • 批准号:
    LP200301593
  • 财政年份:
    2022
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Linkage Projects
Study of recombination reduction mechanism between chalcopyrite compound semiconductors and oxide films
黄铜矿化合物半导体与氧化膜复合还原机理研究
  • 批准号:
    20K05340
  • 财政年份:
    2020
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Oxidative leaching of chalcopyrite: Pursuit of reaction mechanisms through the use of synthetic mineral
黄铜矿的氧化浸出:通过使用合成矿物探索反应机制
  • 批准号:
    20H02494
  • 财政年份:
    2020
  • 资助金额:
    $ 2.37万
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    Grant-in-Aid for Scientific Research (B)
Development of Chalcopyrite leaching process using organic aqua regius
有机王水浸出黄铜矿工艺的开发
  • 批准号:
    19H02488
  • 财政年份:
    2019
  • 资助金额:
    $ 2.37万
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    Grant-in-Aid for Scientific Research (B)
The fabrication of novel chalcopyrite structured semiconductor for high efficiency solar cells
用于高效太阳能电池的新型黄铜矿结构半导体的制造
  • 批准号:
    15K05977
  • 财政年份:
    2015
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Control of Structure and Thermoelectric Properties of Chalcopyrite Compounds by using Room-temperature High-pressure Synthesis
室温高压合成控制黄铜矿化合物的结构和热电性能
  • 批准号:
    15H05548
  • 财政年份:
    2015
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Young Scientists (A)
Development of new chalcopyrite phosphides and its application to solar cells
新型黄铜矿磷化物的研制及其在太阳能电池中的应用
  • 批准号:
    26289279
  • 财政年份:
    2014
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Clarification of high-thermoelectric properties of chalcopyrite tellurides and suggestion of environmentally-friendly materials with good performance
黄铜矿碲化物高热电性能的阐明及性能优良的环保材料建议
  • 批准号:
    25870626
  • 财政年份:
    2013
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Electrochemistry of Chalcopyrite
黄铜矿的电化学
  • 批准号:
    416054-2011
  • 财政年份:
    2011
  • 资助金额:
    $ 2.37万
  • 项目类别:
    University Undergraduate Student Research Awards
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