课题基金 / 基金详情

Fabrication of Advanced Thin Film Photovoltaic Materials using Ternary Compounds as Evaporation Materials and Trial Production of their Solar Cells

Fabrication of Advanced Thin Film Photovoltaic Materials using Ternary Compounds as Evaporation Materials and Trial Production of their Solar Cells
以三元化合物为蒸发材料的先进薄膜光伏材料的制备及其太阳能电池的试制
批准号:
16560284
负责人:
YAMAGUCHI Toshiyuki
金额:
$2.37万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2004
资助国家:
日本
项目状态:
已结题
起止时间:
2004 至 2006

项目摘要

项目成果

YAMAGUCHI Toshiyuki的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
In this research, chalcopyrite Cu(In,Ga)(S,Se)_2 thin films were prepared by the new process applicable to the large scale production, which was the sequential evaporation from ternary compounds. Moreover, their solar cells were manufactured by way of trial and their properties were investigated.(1)The new process to prepare Cu(In,Ga)Se_2 thin films was examined. In the first step, Cu-In-Ga-Se layer was evaporated from CuInSe_2 and CuGaSe_2 ternary compounds onto the Mo/soda-lime glass substrate. In the second step, In-Se layer was deposited from In_2Se_3 compound at a substrate temperature of 490℃. Finally, only Se was effused at the same substrate temperature. The surface composition of Cu(In,Ga)Se_2 thin film could be controlled in the optimum range by adjusting the amount of In_2Se_3.(2)Cu(In,Ga)(S,Se)_2 thin films were prepared by simultaneously evaporating In_2Se_3 and In_2S_3 compounds in the second step of the above process. The S content in Cu(In,Ga)(S,Se)_2 thin films was inc … More reased with increasing the amount of In_2S_3 in the second step.(3)Cu(In,Ga)(S,Se)_2 thin films were prepared by thermal crystallization from CuInGaSe/CuGaSe stacked precursor in S and Se atmosphere. The precursors were prepared by evaporating consecutively from the CuGaSe_2 and Cu(In,Ga)Se_2 compounds. The grain sizes in Cu(In,Ga)(S,Se)_2 thin films were increased with increasing the crystallization temperature.(4)The best solar cell using Cu(In,Ga)Se_2 thin film prepared by the new process demonstrated Voc=330mV, Isc=28.3mA/cm^2, FF=0.461 and Eff=4.31% without AR-coating. The open circuit voltage in Cu(In,Ga)(S,Se)_2 thin film solar cell was improved by using In_2S_3 compound as a S source.As a result, the method to produce Cu(In,Ga)(S,Se)_2 thin films from ternary compounds was clarified for application to fabricate an advanced thin film solar cell with low cost and high efficiency. Moreover, the trial production of their solar cells suggested the future direction of research for improvement in solar cell performance. Less
期刊论文(160)
专著(0)
科研奖励(0)
会议论文
Examination of Fabrication Process for Cu(In,Ga)(S,Se)_2 Thin Film Solar Cells
Cu(In,Ga)(S,Se)_2薄膜太阳能电池制造工艺研究
DOI: --
发表时间: 2006
期刊: Proceedings of 2006 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments
影响因子: --
作者: [Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, 山口利幸, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi]
通讯作者: Toshiyuki Yamaguchi
Cu(In,Ga)Se_2薄膜へのNa添加の効果(II)
Na添加对Cu(In,Ga)Se_2薄膜的影响(II)
DOI: --
发表时间: 2006
期刊: 平成18年電気関係学会関西支部連合大会講演論文集
影响因子: --
作者: [Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, 山口利幸, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, 山口利幸, 山口利幸, 服部 充宏, Javier Camargo Luran]
通讯作者: Javier Camargo Luran
Preparation of Cu(In,Ga)Se_2 thin films by vacuum deposition from ternary compounds (III)
三元化合物真空沉积制备Cu(In,Ga)Se_2薄膜(III)
DOI: --
发表时间: 2006
期刊: Extended Abstracts (The 67th Autumn Meeting, 2006)(The Japan Society of Applied Physics)
影响因子: --
作者: [Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, 山口利幸, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, 山口利幸, 山口利幸, 服部 充宏, Javier Camargo Luran, 吉田 晃周, 沼田 和也, 谷口 喜浩, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi]
通讯作者: Toshiyuki Yamaguchi
DOI: --
发表时间: 2005
期刊: Record of the 2005 Kansai-Section Joint Convention of Institutes of Electrical Engineering, Japan
影响因子: --
作者: [Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, 山口利幸, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, 山口利幸, 山口利幸, 服部 充宏, Javier Camargo Luran, 吉田 晃周, 沼田 和也, 谷口 喜浩, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Mitsuhiro Hatori, Javier Camargo Luran, Akihiro Yoshida, Kazuya Numata, Yoshihiro Taniguchi, Toshiyuki Yamaguchi, 山口 利幸, 山口 利幸, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, 山口利幸, 山口 利幸, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, Toshiyuki Yamaguchi, 山口利幸, 酒井誉平, 平尾敏廣, 服部充宏, Javier Camargo Luran, 吉田晃周, Akihiro Yoshida, Toshiyuki Yamaguchi, Yohei Sakai]
通讯作者: Yohei Sakai
65
    Study on fabrication of next-generation security and reliable environmental-friendly chalcogenide thin film solar cells
    • 批准号:
      17K07036
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.0万
    • 财政年份:
      2017
    • 负责人:
      YAMAGUCHI Toshiyuki
    • 依托单位:
    Study on fabrication of next-generation CZTSSe thin film solar cells using abundant elements in resources
    • 批准号:
      26420888
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.24万
    • 财政年份:
      2014
    • 负责人:
      YAMAGUCHI Toshiyuki
    • 依托单位:
    Study on efficiency enhancement of next-generation CIGS thin film solar cell by sequential evaporation
    • 批准号:
      22560314
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.58万
    • 财政年份:
      2010
    • 负责人:
      YAMAGUCHI Toshiyuki
    • 依托单位:
    Study on preparation of advanced CIGS thin film solar cell by sequential evaporation from ternary compounds
    • 批准号:
      19560328
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.0万
    • 财政年份:
      2007
    • 负责人:
      YAMAGUCHI Toshiyuki
    • 依托单位:
    海外基金