Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD)

我们应用了电感耦合等离子体化学气相沉积(ICP-CVD)系统来沉积非常高质量的二氧化硅、氮化硅和氮氧化硅薄膜。该设备将显著扩展纳米结构技术和分析研究所的现有基础设施，特别是通过室温工艺和400℃高温工艺。新工艺将被多个研究小组用于众多项目，从而开辟了我们以前无法调查的领域。对于申请人的许多科学研究方面，高质量的二氧化硅层起着关键作用，例如，当用作微镜或微快门阵列的技术平台内的隔离层时。此外，对于温度敏感的衬底或表面(例如，图案化聚合物或磁性薄膜系统)，在非常低的温度下沉积是避免结构损坏的关键。同样的道理也适用于通常通过光刻胶进行的剥离工艺，因为低工艺温度是必不可少的，这样通过光刻产生的图案才不会丢失。

We apply for an inductively coupled plasma chemical vapor deposition (ICP-CVD) system for the deposition of very high-quality silicon oxide, silicon nitride and silicon oxynitride thin films. This device will significantly extend the existing infrastructure at the Institute of Nanostructure Technology and Analytics, especially by room temperature processes and high temperature processes at 400°C. The new processes would be used by several research groups in numerous projects, thus opening up areas that we could not investigate before. For many scientific research aspects of the applicants, high-quality SiO2 layers play a key role, e.g. when used as isolation layers within the technology platform of micromirror or microshutter arrays. In addition, for temperature-sensitive substrates or surfaces (e.g., patterned polymers or magnetic thin film systems), deposition at very low temperatures is crucial to avoid damaging of the structures. The same applies to lift-off processes, which are usually carried out via photoresists, were low process temperatures are essential so that the patterns generated lithographically will not get lost.