Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD)

感应耦合等离子体化学气相沉积 (ICP-CVD)

• 批准号: 519196594
• 金额: --
• 依托单位: Universität Kassel
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2023
• 资助国家: 德国
• 起止时间: 2022-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/519196594?language=en
• 关键词: Inductively; Coupled; Plasma; Chemical; Vapour

We apply for an inductively coupled plasma chemical vapor deposition (ICP-CVD) system for the deposition of very high-quality silicon oxide, silicon nitride and silicon oxynitride thin films. This device will significantly extend the existing infrastructure at the Institute of Nanostructure Technology and Analytics, especially by room temperature processes and high temperature processes at 400°C. The new processes would be used by several research groups in numerous projects, thus opening up areas that we could not investigate before. For many scientific research aspects of the applicants, high-quality SiO2 layers play a key role, e.g. when used as isolation layers within the technology platform of micromirror or microshutter arrays. In addition, for temperature-sensitive substrates or surfaces (e.g., patterned polymers or magnetic thin film systems), deposition at very low temperatures is crucial to avoid damaging of the structures. The same applies to lift-off processes, which are usually carried out via photoresists, were low process temperatures are essential so that the patterns generated lithographically will not get lost.

我们申请电感耦合等离子体化学气相沉积（ICP-CVD）系统，用于沉积非常高质量的氧化硅、氮化硅和氮氧化硅薄膜。该设备将显著扩展纳米结构技术和分析研究所的现有基础设施，特别是通过室温工艺和400°C的高温工艺。新的过程将被几个研究小组在许多项目中使用，从而开辟了我们以前无法研究的领域。对于申请人的许多科学研究方面，高质量的SiO2层起着关键作用，例如，当用作MEMS或微光闸阵列的技术平台内的隔离层时。此外，对于温度敏感的基底或表面（例如，图案化的聚合物或磁性薄膜系统），在非常低的温度下沉积对于避免结构损坏是至关重要的。这同样适用于通常通过光刻胶进行的剥离工艺，其中低工艺温度是必不可少的，以便光刻产生的图案不会丢失。