Structure of Epitaxial Semiconductor Quantum Dots

外延生长的半导体量子点由于其在电子和光电子器件中的潜在应用，近年来受到了广泛的关注。然而，由于缺乏对其纳米结构的详细了解，目前生长的量子点的质量仍然与真实的器件应用所需的质量相距甚远。该项目旨在将复旦大学在半导体量子点生长方面的优势与昆士兰州大学世界一流的表征设备（先进的透射电子显微镜）联合收割机相结合，积极探索外延生长器件级半导体量子点的最佳路径。

Epitaxially grown semiconductor quantum dots have received extensive attention in recent years due to their potential applications in electronic and optoelectronic devises. However, the quality of current grown quantum dots is still very far from that required for real device applications due to a lack of detailed knowledge of their nanostructures. This project aims to combine the strength of growing semiconductor quantum dots at Fudan University and the world-class characterisation facilities (advanced transmission electron microscopy) at the University of Queensland to actively explore optimum paths for epaxially growing device-quality semiconductor quantum dots.