Structure of Epitaxial Semiconductor Quantum Dots
Structure of Epitaxial Semiconductor Quantum Dots
批准号:
LX0455717
负责人:
Em/Prof Jin Zou
金额:
$3.38万
依托单位国家:
澳大利亚
项目类别:
Linkage - International
财政年份:
2004
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2004-08-01 至 2007-12-31
中文摘要
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英文摘要
Epitaxially grown semiconductor quantum dots have received extensive attention in recent years due to their potential applications in electronic and optoelectronic devises. However, the quality of current grown quantum dots is still very far from that required for real device applications due to a lack of detailed knowledge of their nanostructures. This project aims to combine the strength of growing semiconductor quantum dots at Fudan University and the world-class characterisation facilities (advanced transmission electron microscopy) at the University of Queensland to actively explore optimum paths for epaxially growing device-quality semiconductor quantum dots.
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