Towards High-quality Hetero-epitaxial III-V Semiconductor Nanowires

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The use of semiconductor nanowires has uncovered many scientific curiosities and extended their potential applications in many fields. In general, nanowire growth is governed by metallic catalysts, involving nanowire nucleation and growth. So far, the role of catalysts during nanowire nucleation is not clear and needs urgent attention. This project aims to investigate the behaviour of catalysts before and during the nucleation of III-V nanowires by means of nano-characterisation to ultimately integrate high-quality III-V nanowires on silicon substrates. The new knowledge developed from this project is expected to provide critical insights for developing high-quality III-V nanowires integrated on silicon substrates.