Towards High-quality Hetero-epitaxial III-V Semiconductor Nanowires

迈向高质量异质外延 III-V 族半导体纳米线

• 批准号: DP150100701
• 负责人: Em/Prof Jin Zou
• 金额: $ 22.46万
• 依托单位: The University of Queensland
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2015
• 资助国家: 澳大利亚
• 起止时间: 2015-01-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP150100701
• 关键词: Towards; quality; Hetero; epitaxial; III

The use of semiconductor nanowires has uncovered many scientific curiosities and extended their potential applications in many fields. In general, nanowire growth is governed by metallic catalysts, involving nanowire nucleation and growth. So far, the role of catalysts during nanowire nucleation is not clear and needs urgent attention. This project aims to investigate the behaviour of catalysts before and during the nucleation of III-V nanowires by means of nano-characterisation to ultimately integrate high-quality III-V nanowires on silicon substrates. The new knowledge developed from this project is expected to provide critical insights for developing high-quality III-V nanowires integrated on silicon substrates.

半导体纳米线的使用揭示了许多科学上的好奇，并扩展了它们在许多领域的潜在应用。一般来说，纳米线的生长是由金属催化剂控制的，包括纳米线的成核和生长。到目前为止，催化剂在纳米线成核过程中的作用尚不清楚，亟待关注。本项目旨在通过纳米表征手段研究催化剂在III-V纳米线成核之前和成核过程中的行为，最终将高质量的III-V纳米线集成到硅衬底上。通过该项目开发的新知识有望为开发集成在硅衬底上的高质量III-V纳米线提供关键见解。