EAGER: BRAIDING: Braiding Majorana bound states in two-dimensional epitaxial semiconductor-superconductor structures
EAGER:编织:在二维外延半导体超导结构中编织马约拉纳束缚态
基本信息
- 批准号:1836687
- 负责人:
- 金额:$ 30万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2018
- 资助国家:美国
- 起止时间:2018-07-15 至 2020-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Nontechnical Abstract: Physical properties of a semiconductor are modified when it is placed in proximity to a superconducting material. Interfacing semiconductors with superconductors in a controlled way allows to control such novel properties. When the conditions at the interface are right, new types of behavior may emerge. For example, emergent states known as Majorana zero modes can form at this interface, and manifest as a specific measurement feature called zero-bias peak. Such unique new states do not follow the usual quantum statistics governing the behavior of electrons or atoms, but rather conform to so-called non-Abelian statistics. Recently, impressive experimental progress in fabricating one-dimensional (1D) structures has led to indirect detection of such non-Abelian states relying on zero-bias peak. This work will enable using the non-Abelian states in future quantum computing.Technical Abstract: This project takes a new path to create and manipulate topological excitations on a two-dimensional (2D) epitaxial platform. It combines proximity-induced superconductivity in a 2D electron gas (2DEG) with magnetic textures originating from rotation of the magnetic field and/or fringing fields of nano-magnets. These magnetic textures engineer an effective Hamiltonian in the 2DEG that supports the creation of Majorana zero modes. The 2D geometry overcomes obstacles of one-dimensional Majorana zero modes allowing realization of ring, cross and T-junctions for braiding and fusing, opening a new path to topological quantum computing. The results of our fundamental research will provide important experimental advances to establish a new scalable platform to study topological excitations.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
非技术摘要:半导体的物理性质被修改时,它被放置在接近超导材料。以受控的方式将半导体与超导体连接允许控制这种新颖的性质。当界面的条件合适时,新的行为类型可能会出现。例如,称为马约拉纳零模式的涌现状态可以在该界面处形成,并表现为称为零偏置峰的特定测量特征。这种独特的新状态不遵循通常的量子统计控制电子或原子的行为,而是符合所谓的非阿贝尔统计。近年来,在一维结构的制备方面取得了令人瞩目的实验进展,使得人们可以利用零偏峰间接探测这种非阿贝尔态。这项工作将使在未来的量子计算中使用非阿贝尔状态。技术摘要:该项目采取了一种新的路径来创建和操纵二维(2D)外延平台上的拓扑激发。它结合了在二维电子气(2DEG)中的邻近诱导超导性与源自磁场旋转和/或纳米磁体边缘场的磁性纹理。这些磁纹理工程师在2DEG中的有效哈密顿量,支持创建马约拉纳零模式。二维几何克服了一维马约拉纳零模的障碍,允许实现用于编织和熔合的环形、十字形和T形结,为拓扑量子计算开辟了一条新的道路。我们的基础研究结果将提供重要的实验进展,以建立一个新的可扩展平台来研究拓扑激发。该奖项反映了NSF的法定使命,并且通过使用基金会的知识价值和更广泛的影响进行评估,被认为值得支持审查标准。
项目成果
期刊论文数量(1)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Gate controlled anomalous phase shift in Al/InAs Josephson junctions
- DOI:10.1038/s41467-019-14094-1
- 发表时间:2020-01-10
- 期刊:
- 影响因子:16.6
- 作者:Mayer, William;Dartiailh, Matthieu C.;Shabani, Javad
- 通讯作者:Shabani, Javad
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Javad Shabani其他文献
Control of transport property of InAs quantum wire with side and top gate structure
侧栅和顶栅结构InAs量子线输运特性的控制
- DOI:
- 发表时间:
2015 - 期刊:
- 影响因子:0
- 作者:
Sadashige Matsuo;Hiroshi Kamata;Shoji Baba;Russell Deacon;Javad Shabani;Christopher Palmstrom;and Seigo Tarucha - 通讯作者:
and Seigo Tarucha
InAs量子井戸から形成した量子細線の伝導特性と電界制御
InAs量子阱量子线的导电特性和电场控制
- DOI:
- 发表时间:
2015 - 期刊:
- 影响因子:0
- 作者:
松尾貞茂;鎌田大;馬場翔二;R. S. Deacon;Javad Shabani;Christopher Palmstrom;樽茶清悟 - 通讯作者:
樽茶清悟
Andreev Reflection at a Junction of Spin-resolved Quantum Hall State and Superconductor
自旋分辨量子霍尔态与超导体交界处的安德烈夫反射
- DOI:
- 发表时间:
2016 - 期刊:
- 影响因子:0
- 作者:
Sadashige Matsuo;Kento Ueda;Shoji Baba;Hiroshi Kamata;Javad Shabani;Christopher Palmstrom;and Seigo Tarucha - 通讯作者:
and Seigo Tarucha
Voltage-activated parametric entangling gates based on gatemon qubits
基于gatemon量子位的电压激活参数纠缠门
- DOI:
10.1103/physrevapplied.20.044012 - 发表时间:
2023 - 期刊:
- 影响因子:4.6
- 作者:
Yinqi Chen;K. Nesterov;Hugh Churchill;Javad Shabani;V. Manucharyan;Maxim G. Vavilov - 通讯作者:
Maxim G. Vavilov
Correlated states of electrons in wide quantum wells at low fillings: the role of charge distribution symmetry.
低填充量宽量子阱中电子的相关态:电荷分布对称性的作用。
- DOI:
10.1103/physrevlett.103.046805 - 发表时间:
2009 - 期刊:
- 影响因子:8.6
- 作者:
Javad Shabani;T. Gokmen;M. Shayegan - 通讯作者:
M. Shayegan
Javad Shabani的其他文献
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