Studies on the Composition-Structure-Property Relations in Ceramic Grain-Boundaries

TEM观测到的谷物边界区域是在半导体<BaTiO_3>厚薄膜上制作的。“跨越谷物边界的180个域不能占据90个域的存在的可能性，”他提出了建议。溶解方法已应用于NiO-ZnO陶瓷来控制颗粒边界区域中的微观结构，而在ZnO中的颗粒是NiO-ZnO丰富阶段，由XMA检测到。V中的变化--我的性格与相对人性中的变化在25 ° C时得到了测量。&lt;Ni_（0.2）Zn_（0.8）O&gt; sintered at 1300 c and further annealed at 800 c for 336 h was found to be the most sensitive to humidity。单晶体MgO在1000-1400 ° c上的电击穿强度在分散密度下降解，并使多晶体管MgO在颗粒边界上产生显著影响。在离子行为和破坏强度之间找到了很高的相关性，但与观察到的熔化轨道一起提出了电分解位置的建议。varistor properties were examined for porous ZnO containing no dopants such as <Bi_2O_3>or &lt;Pr_6O_（11）&gt;。对氧化化和未氧化化样本的I-V曲线的比较，描述了氧化物，其中有化学成分并在谷物边界上被插入，在赋予变异性特征的上升中扮演了一个角色。

TEM observations of the grain boundary areas were made on semiconductng <BaTiO_3> Thick film. The 180 domains across the grain boundary could not be ovserved the possibility of the existence of 90 domains was suggested. Exsolution method was applied to the NiO-ZnO ceramics to control the microstructure in which the grain-boundary regions were rich in ZnO and the grains were NiO rich phase, as detected by XMA. The change in V-I characteristics with the change in relative humidity was measured at 25゜c. <Ni_(0.2)Zn_(0.8)O> sintered at 1300゜c and further annealed at 800゜c for 336h was found to be the most sensitive to humidity. The electrical breakdown strength of single crystal MgO at 1000-1400゜c decreased with increase in the dislocation density and that of polycrystalline MgO indicated a significant effect of the grain boundaries. A high correlation between the ionic conductivity and the breakdown strength was found, which together with the observed melted track suggested that the electrolytic decomposition took place. The varistor properties were examined for porous ZnO containing no dopants such as <Bi_2O_3> or <Pr_6O_(11)> . Comparison of I-V curves for the oxidized and unoxidized samples indicated that oxygen, which had chemisorbed and diffused into the grain boundary, played a role in giving rise to varistor characteristics.