Formation and Annihilation of Stacking Faults in Silicon Carbide

碳化硅中堆垛层错的形成与消灭

• 批准号: 04650692
• 负责人: KOUMOTO Kunihito
• 金额: $ 1.47万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04650692/
• 关键词: Silicon carbide; Stacking fault; Grain growth; Surface diffusion; High-temperature; Reaction rate; Formation; Annihilation; 炭化ケイ素; 積層欠陥; 粒成長; 表面拡散; 拡散律速; 速度論

Annihilation of stacking faults in beta-SiC was found to occur simultaneously with grain growth during high-temperature sintering. Analyzes of the rate process by use of the Avrami-Erofeev equation indicated that the rate of annihilation of stacking faults was controlled by the atomic diffusion process. The rate of grain growth, on the other hand, was found to be limited by surface diffusivity. Coincidence in the values of activation energy for the two processes suggested that the annihilation of stacking faults is an apparent phenomenon resulting from the microstructural evolution in which the grain growth is controlled by surface diffusivity. Incorporation of nitrogen during heating suppressed the surface diffusivity and hence, the rate of stacking fault annihilation. Formation of stacking faults during the synthesis of beta-SiC by cabothermal reduction of silica was also investigated and we found that two kinds of morphology, whisker and sphere, were always observed for the synthesized powder, and that a larger amount of stacking faults were containde in whiskers than in spherical particles.

发现在高温烧结过程中，β-碳化硅中层错的湮没与晶粒长大同时发生。用Avrami-Erofev方程对速率过程的分析表明，层错的湮没速率受原子扩散过程的控制。另一方面，颗粒的生长速度受到表面扩散系数的限制。这两个过程的激活能值一致表明，层错的湮没是微观组织演化的一个明显现象，在这个过程中，晶粒的生长受表面扩散系数控制。在加热过程中掺入氮抑制了表面扩散系数，从而降低了层错湮灭的速率。研究了SiO_2热还原合成β-碳化硅过程中层错的形成，发现合成的粉末具有晶须和球状两种形态，且晶须中的层错比球形粒子中的层错多。

项目成果

河本 邦仁,徐 元善: "Kinetics and Mechanism of Stacking Fault Annihilation and Grain Growth in Porous Ceramics of β‐SiC" Journal of Materials Research 発表予定. (1993)

Kunihito Kawamoto、Xuanshan Xu：“β-SiC多孔陶瓷中堆垛层错消灭和晶粒生长的动力学和机制”《材料研究杂志》即将出版（1993）。

S.Takeda, W.S.Seo, K.Koumoto, et al.: "Thermoelectric Properties of Porous beta-SiC Fabricated from Rice Hull Ash" J.Ceram Soc.Japan. 101. 814-818 (1993)

S.Takeda、W.S.Seo、K.Koumoto 等人：“由稻壳灰制造的多孔 β-SiC 的热电特性”J.Ceram Soc.Japan。

S.Takeda: "Thermoelectric Properties of Porous β-SiC Fabricated from Rice Hull Ash" J.Ceram Soc.Japan. 101. 814-818 (1993)

S.Takeda：“由稻壳灰制造的多孔 β-SiC 的热电性能”J.Ceram Soc.Japan 101. 814-818 (1993)。

W.S.Seo: "Kinetics and Mechanism of Stacking Fault Annihilation and Grain Growth in Porous Ceramics of β-SiC" J.Mater.Res.18. 1644-1650 (1993)

W.S.Seo：“β-SiC 多孔陶瓷中堆垛层错消灭和晶粒生长的动力学和机制”J.Mater.Res.18（1993）。

河本 邦仁、徐 元善、〓 哲薫、柳田 博明: "Behavior of Stacking Faults in β‐SiC‐Mechanism of Annihilation and additive effects‐" Solid State Phenomena. 25&26. 133-142 (1992)

Kunihito Kawamoto、Yuanshan Xu、Tetsukun、Hiroaki Yanagita：“β-SiC 中堆垛层错的行为 - 湮没和相加效应的机制 -” 固态现象 133-142。