Memristively Programmable Transistors

忆阻可编程晶体管

• 批准号: 521341740
• 负责人: Professor Dr.-Ing. Stefan Tappertzhofen
• 金额: --
• 依托单位: Arbeitsgebiet Bauelemente der Mikro- und Nanoelektronik (BMN)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/521341740?language=en
• 关键词: Memristively; Programmable; Transistors

The core-element of today’s dominating Flash-memory technology are floating-gate transistors. When designing the gate-dielectric of floating-gate transistors, a tradeoff between fast write-access and long state retention has to be made. We recently reported on a novel prototype of a memristively programmable transistor (memTR). The advantage of memTRs is that the logic state is encoded by nanoionic processes instead of classical charge storage as in case of floating-gate transistors. This offers the potential of fast write-access, long state retention and high programming endurance. A memTR is essentially an innovative combination of a transistor and a resistive switch (also known as memristive switch or memristor) integrated on the transistor’s gate contact. Resistive switches are low-power devices with short programming and write access times. Due to their analogue and non-linear behavior memristive devices are also used in neuromorphic applications. Based on our preliminary proof-of-concept results memTRs will be fabricated, characterized and optimized. We will make use of BEOL-compatible fabrication processes. We will characterize in detail the devices and the operation principle using advanced electrical, spectroscopic and microscopic techniques. These findings will be used for a fundamental understanding of the operation principle of memTRs and for further device optimization. Based on these results we will also experimentally analyze the application potential of memTRs for neuromorphics.

当今主流闪存技术的核心元件是浮栅晶体管。在设计浮栅晶体管的栅极电介质时，必须在快速写入访问和长状态保持之间进行权衡。我们最近报道了一种新颖的忆阻可编程晶体管（memTR）原型。 memTR 的优点是逻辑状态是通过纳米离子过程编码的，而不是像浮栅晶体管那样通过传统的电荷存储来编码。这提供了快速写入访问、长时间状态保留和高编程耐久性的潜力。 memTR 本质上是晶体管和集成在晶体管栅极触点上的电阻开关（也称为忆阻开关或忆阻器）的创新组合。电阻开关是低功耗器件，具有较短的编程和写入访问时间。由于其模拟和非线性行为，忆阻器件也用于神经形态应用。根据我们的初步概念验证结果，将制造、表征和优化 memTR。我们将利用兼容 BEOL 的制造工艺。我们将使用先进的电气、光谱和显微技术详细描述设备和操作原理。这些发现将用于从根本上理解 memTR 的工作原理并用于进一步的器件优化。基于这些结果，我们还将通过实验分析 memTR 在神经形态方面的应用潜力。