Memristor-Based Sensors and Metrology

氢气传感器对汽车工业具有很高的技术相关性。薄膜技术允许使用已有的工艺大规模生产低价传感器，这些工艺也用于微电子和纳米电子学。薄膜传感器的缺点，特别是那些用于传感氢气的传感器，是漂移和退化效应，限制了在安全相关应用中的使用。在本项目中，介绍了一种基于记忆元件的新型传感器。记忆元件的阻态可以在至少两个不同的电平(高阻态和低阻态)之间切换。最近已经证明，电阻转变是基于纳米尺度上复杂的氧化还原现象，并且记忆元件受到环境的影响。“记忆传感元件”(MSE)将利用这些电化学相互作用，成为发展新型薄膜传感器的基石。这些器件提供了可以记忆校准传感器功能的可能性，并且漂移和退化效应可以通过重新编程方案来补偿。在这个项目中，将制造和表征MSE。先进的电学、光谱学、显微非原位和原位计量技术将用于研究基本的物理和电化学现象。物理化学模型将在这些结果的基础上进行修改和扩展。这些发现最终将用于制造和优化低成本、快速和可重复的氢传感记忆传感器元件。

Hydrogen gas sensors have a high technological relevance for the automotive industries. Thin-film technology allows for mass-production of low-priced sensors using established processes that are also used in micro- and nanoelectronics. Disadvantages of thin-film sensors, in particular those for sensing hydrogen, are drift and degradation effects that limit the use in safety relevant applications. In this project, a novel sensor-type based on memristive elements is introduced. The resistive state of memristive elements can be switched between at least two different levels (high- and low-resistive state). It has been recently demonstrated that the resistance transition is based on complex redox phenomena on the nanoscale and that memristive elements are affected by the ambient. “Memristive sensing elements” (MSEs) will exploit these electrochemical interactions and will be the corner stones for development of novel thin-film sensors. These devices offer the potential that the sensor-functionality can be memristively calibrated, and drift- and degradation effects can be compensated by reprogramming schemes. In this project, MSEs will be fabricated and characterized. Advanced electrical, spectroscopic, and microscopic ex situ and in situ metrology techniques will be used to investigate fundamental physical and electrochemical phenomena. Physico-chemical models will be modified and extended based on these results. These findings will be eventually used for fabrication and optimization of low-cost, fast and reproducible memristive sensor elements for hydrogen sensing.