Grain boundary engineering of 2D materials for nano-ionic Resistive Switches

纳米离子电阻开关二维材料的晶界工程

• 批准号: 316245084
• 负责人: Professor Dr.-Ing. Stefan Tappertzhofen
• 金额: --
• 依托单位: Arbeitsgebiet Bauelemente der Mikro- und Nanoelektronik (BMN)
• 依托单位国家: 德国
• 项目类别: Research Fellowships
• 财政年份: 2016
• 资助国家: 德国
• 起止时间: 2015-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/316245084?language=en
• 关键词: Grain; boundary; engineering; 2D; materials

Resistive switches (RRAMs) are promising candidates for future non-volatile memories and logic-in-memory architectures. In these two-terminal devices, logic states are encoded by reversible manipulation of the device resistance upon short voltage pulses. The resistance transition is attributed to the growth and rupture of a nanoscale conductive filament driven by the migration of mobile oxygen vacancies or metal cations, such as silver or copper ions depending on the materials used. In the latter case ultra-low switching energies below 10 fJ/bit are predicted. Despite their advantages including, scalability and compatibility with cost-saving standard back-end-of-line fabrication processes, the inferior device stability due to uncontrolled metal particle diffusion impedes their practical application. Graphene has been recently suggested as ultra-thin two-dimensional diffusion barrier. However, the ion diffusion through 2D materials integrated in RRAMs is unexplored which hinders device optimisation. We propose to integrated two-dimensional hexagonal boron nitride (hBN) in vertical and lateral resistive switches. In particular, we will characterize the switching behaviour in presence of grain boundaries and analyze how these can be exploited and tuned to improve the switching performance. Electrical measurements will be complemented by a recently introduced technique, so called plasmon-enhanced spectroscopy, to probe morphological changes upon resistive switching. As the ambient atmosphere is significantly involved during the switching, switching mechanisms will be further analyzed using in situ environmental microscopic and spectroscopic techniques. This project will bring a step change in the understanding of these devices, which is needed to unlock their full application potential.

电阻开关(RRAM)是未来非易失性存储器和存储器中逻辑结构的候选器件。在这些双端器件中，逻辑状态通过在短电压脉冲时对器件电阻进行可逆操作来编码。电阻转变归因于纳米级导电丝的生长和断裂，这种生长和断裂是由可移动的氧空位或金属阳离子(如银或铜离子)的迁移驱动的，具体取决于所使用的材料。在后一种情况下，预测了低于10fJ/比特的超低开关能量。尽管它们的优点包括可扩展性和与节省成本的标准后端制造工艺的兼容性，但由于不受控制的金属颗粒扩散而导致的较差的器件稳定性阻碍了它们的实际应用。石墨烯最近被认为是一种超薄的二维扩散势垒。然而，离子通过集成在RRAM中的2D材料的扩散还没有被探索，这阻碍了器件的优化。我们提出在垂直和横向电阻开关中集成二维六方氮化硼(HBN)。特别是，我们将表征存在晶界的开关行为，并分析如何利用和调整这些晶界来提高开关性能。电学测量将由最近引入的一项名为等离子体增强光谱的技术来补充，该技术可以探测电阻切换时的形态变化。由于切换过程中主要涉及环境大气，因此将使用现场环境显微镜和光谱技术进一步分析切换机制。该项目将带来对这些设备的理解上的一步变化，这是释放它们的全部应用潜力所必需的。