Research on Instantaneous Electrical and Optical Characterization systems for Alloy Semiconductors

合金半导体瞬时电学和光学表征系统的研究

• 批准号: 61550304
• 负责人: HONGO Shozo
• 金额: $ 1.41万
• 依托单位: KOBE UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1986
• 资助国家: 日本
• 起止时间: 1986 至 1987
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-61550304/
• 关键词: Deep Level Transient Spectroscopy; Compound semiconductor hetero-jnention; Capacitance-Voltage characteristics; Deep traps; 欠陥準位; 過渡容量分光法; 瞬時分光システム容量法; 格子ミスマッチ; インジウムガリウムヒソリン; インジウムガリウムリン

1. The multiple sampling method with minimal time-resolution of 100 nsec has been applied to the DLTS (Deep Level Transient Spectroscopy)/ C-V(Capacitance-Voltage measurement) systems.Consequently, elctrical characterization of compound semiconductors has been successfully performed within several tens minutes by this system.2. As for reduction of noise associated with the measurement, the synchronous summation and/or digital low-pass filter for the signal processing are adopted in this system.The S/N (Signal Noise Rateio) has been improved up to 40 dB which was not achieved by the conventional analogue jntegrator/ signal averager.3. This system has been successfully applied to the characterization of lattic-mismatched heaterojunction: GaInAs/GaAs;(1)A hole tyap with the activation energy of 0.63 eV and the cross section of 1x 10 -14 cm 2 exists in the neighborhood of the heterointerface to the amount of 2 x 10 14 cm -3. This hole trap is proved to be related to the strain at the hetero-interface.(2)The conduction band discontinuity of this hetero-interface is which follows the 0.64* Ec rule.

1.将最小时间分辨率为100 nsec的多重采样方法应用于DLTS（深能级瞬态谱）/ C-V（电容-电压测量）系统，在几十分钟内成功地完成了化合物半导体的电学表征.在降低测量噪声方面，系统采用同步求和和/或数字低通滤波器进行信号处理，信噪比提高到40 dB，这是传统的模拟积分器/信号平均器所不能达到的.该系统已成功地应用于GaInAs/GaAs晶格失配异质结的表征：（1）在异质界面附近存在一个空穴型，其激活能为0.6 3eV，截面积为1 × 10 - 14 cm-2，其数量为2 × 10 - 14 cm-3。这种空穴陷阱被证明与异质界面处的应变有关。（2）这种异质界面的导带不连续性符合0.64* Ec规则。

项目成果

M.Ogawa: Record of Alloy Semi-conductor Physics and Electronics Symposium. (1987)

M.Okawa：合金半导体物理与电子学研讨会记录。

M.Ogawa;K,Kagotani;S.Hongo;Y.Watanabe;N.Sano;H.Kato;M.Nakayama: Jpn.J.Appl.Phys.

M.Okawa；K，Kagotani；S.hongo；Y.Watanabe；N.Sano；H.Kato；M.Nakayama：Jpn.J.Appl.Phys。

N. Ogawa, K. Kagotani, S. Hongo, Y. Watanabe, N. Sano, H. Kato, M.N akayama: "Characterization of Lattice Mismatched Hetero-Interface" JPN J. Appl. Phys.

N. Okawa、K. Kagotani、S. Hongo、Y. Watanabe、N. Sano、H. Kato、M.N akayama：“晶格不匹配异质接口的表征”JPN J. Appl。