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Fundamental Research on Observation and Control of Hydrogen Related Reaction in Semiconductor Surfaces

半导体表面氢相关反应观测与控制基础研究

基本信息

批准号：
09650031
负责人：
HONGO Shozo
金额：
$ 0.45万
依托单位：
KOBE UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650031/
关键词：
MDS TDS TPD Thermal Desorption Spectroscopy Silicon hydrogen Alkaline Metal Barium

项目摘要

The coadsorption structure and electronic state of Cs and H on Si(100)2x1 were investigated by means of MDS and TDS.The both systems of Cs/H/Si and H/Cs/Si have the same TDS profiles, which indicates that Si dangling bonds are partly terminated with H atoms in both systems and CsH formed at the Cs coverages above about 0.4 ML is dissociated into H and Cs, resulting in H_2 desorption at about 20。C.On the other hand, MDS spectra for the H / Cs / Si system differs from those for Cs / H / Si one, i.e., Cs-H bonds can be clearly seen in case of the H / Cs / Si systems, while not in case of the Cs / H / Si systems. The difference for MDS spectra between both systems can be explained as follows : in case of the Cs / H / Si systems, all hydrogen atoms including Cs-H bonds are located between Cs layer and Si substrate, while in case of the H / Cs / Si systems, some of the hydrogen atoms forming Cs-H bonds are on the outermost surface.The mechanism of hydrogen chemisorption on Ba precovered Si(100) surface was investigated by means of MDS, TDS and work function measurement. For 1ML Ba/Si(100), incident hydrogen atoms adsorb on top of Ba atoms from the initial stage of hydrogen exposure. On the other hand, for 4ML Ba/Si(100), hydrogen atoms diffuse into the Ba overlayers in the early stage of hydrogen exposure. Finally, all Ba atoms for both systems turn into BaH_2. The bond of Ba-H formed on 4ML Ba/Si(100) is stronger than that formed on 1ML Ba/Si(100).

用MDS和TDS方法研究了Cs和H在Si（100）2x 1上的共吸附结构和电子态. Cs/H/Si和H/Cs/Si两个体系具有相同的TDS分布，表明两个体系中Si的悬挂键部分被H原子封端，Cs覆盖度大于0.4ML时生成的CsH解离为H和Cs.导致H_2在约20.另一方面，H / Cs / Si系统的MDS谱与Cs / H / Si系统的MDS谱不同，即，在H / Cs / Si体系中可以清楚地看到Cs-H键，而在Cs / H / Si体系中则不能。两种系统之间MDS光谱的差异可解释如下：在Cs / H / Si系统的情况下，包括Cs-H键的所有氢原子位于Cs层和Si衬底之间，而在H / Cs / Si系统的情况下，氢原子在Ba预覆盖Si（100）表面的化学吸附机理用MDS、TDS和功函数测量等方法对表面进行了研究。对于1 ML的Ba/Si（100），氢原子从氢暴露的初始阶段开始就吸附在Ba原子上。另一方面，对于4 ML Ba/Si（100），氢原子在氢暴露的早期扩散到Ba覆盖层中。最后，两个体系中的Ba原子全部转化为BaH_2。在4 ML Ba/Si（100）上形成的Ba-H键比在1 ML Ba/Si（100）上形成的Ba-H键强。