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Realization of long time stable negative electron affinity surface and production of efficient emitter

Realization of long time stable negative electron affinity surface and production of efficient emitter
实现长期稳定的负电子亲和力表面和高效发射极的生产
批准号:
15560019
负责人:
HONGO Shozo
金额:
$2.24万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004

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中文摘要
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英文摘要
We have studied the stability of cesium oxide on CVD diamond, stability of photoelectron emission from cesium oxide covered CVD diamond and the field emission characteristics of nano-scale diamond.1)The about 3 ML cesium layers on CVD diamond turn to cesium super oxide by exposure of several Langumier of oxygenThis super oxide is stable when it is exposed to atmosphere. This super-oxide covered CVD diamond is one of the good candidate for ultra violet light photo cathode.2)We have succeeded in the production of nano size diamond crystal. The reduction in gas pressure during growth and application of voltage between hot filaments and substrates are affective to produce high-quality nano diamond crystal.3)We measured electron emission characteristics for these CVD diamond thin films. The threshold field strength for electron emission and emission current density are 3.2 V/μm and 4 mA/cn^2 which are much better than normal micro meter crystal size diamond films.
期刊论文(4)
专著(0)
科研奖励(0)
会议论文
新訂版・表面科学の基礎と応用
新版本:表面科学基础与应用
DOI: --
发表时间: 2004
期刊:
影响因子: --
作者: [R.Nagai, M.Fukamachi, T.Nagatani, 本郷 昭三他多数]
通讯作者: 本郷 昭三他多数
Electron emission mechanism from negative electron affinity surface and production of highly efficient electron emitter
  • 批准号:
    13650027
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $1.98万
  • 财政年份:
    2001
  • 负责人:
    HONGO Shozo
  • 依托单位:
Fundamental Research on Observation and Control of Hydrogen Related Reaction in Semiconductor Surfaces
  • 批准号:
    09650031
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $0.45万
  • 财政年份:
    1997
  • 负责人:
    HONGO Shozo
  • 依托单位:
Research on Instantaneous Electrical and Optical Characterization systems for Alloy Semiconductors
  • 批准号:
    61550304
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 资助金额:
    $1.41万
  • 财政年份:
    1986
  • 负责人:
    HONGO Shozo
  • 依托单位:
海外基金