Realization of long time stable negative electron affinity surface and production of efficient emitter

实现长期稳定的负电子亲和力表面和高效发射极的生产

• 批准号: 15560019
• 负责人: HONGO Shozo
• 金额: $ 2.24万
• 依托单位: Kobe University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560019/
• 关键词: diamond; electron emission; negative electron affinity; field emission; barium; cesium; MDS; NEA; 電界電子放出; TDS

We have studied the stability of cesium oxide on CVD diamond, stability of photoelectron emission from cesium oxide covered CVD diamond and the field emission characteristics of nano-scale diamond.1)The about 3 ML cesium layers on CVD diamond turn to cesium super oxide by exposure of several Langumier of oxygenThis super oxide is stable when it is exposed to atmosphere. This super-oxide covered CVD diamond is one of the good candidate for ultra violet light photo cathode.2)We have succeeded in the production of nano size diamond crystal. The reduction in gas pressure during growth and application of voltage between hot filaments and substrates are affective to produce high-quality nano diamond crystal.3)We measured electron emission characteristics for these CVD diamond thin films. The threshold field strength for electron emission and emission current density are 3.2 V/μm and 4 mA/cn^2 which are much better than normal micro meter crystal size diamond films.

我们研究了氧化铯在CVD金刚石上的稳定性，氧化铯覆盖的CVD金刚石的光电子发射稳定性和纳米级金刚石的场发射特性。1)CVD金刚石表面大约3毫升的铯层在几个氧气的作用下变成了铯超氧化物。这种超氧化物在大气中是稳定的。这种超氧化物CVD金刚石是一种很好的紫外光阴极候选材料。2)我们已经成功地生产出了纳米级金刚石晶体。降低生长过程中的气体压力和施加热丝与衬底之间的电压是制备高质量纳米金刚石晶体的有效方法。3)测量了CVD金刚石薄膜的电子发射特性。电子发射的阈值场强为3.2V/μm，发射电流密度为4 mA/cN^2，明显优于普通微米级金刚石薄膜。

项目成果

新訂版・表面科学の基礎と応用

新版本：表面科学基础与应用

• 发表时间: 2004
• 作者: R.Nagai;M.Fukamachi;T.Nagatani;本郷 昭三他多数
• 通讯作者: 本郷 昭三他多数