Realization of long time stable negative electron affinity surface and production of efficient emitter

研究了CVD金刚石表面氧化铯的稳定性、氧化铯包覆CVD金刚石的光电子发射稳定性以及纳米金刚石的场发射特性。1）CVD金刚石表面约3 ML的铯层经几个朗缪尔的氧气暴露后转变为氧化铯超氧化物。这种超氧化物覆盖的CVD金刚石是紫外光阴极的良好候选者之一。2）我们成功地制备了纳米金刚石晶体。在生长过程中降低气体压力和在热丝和衬底之间施加电压是有效的，以产生高质量的纳米金刚石晶体。3）我们测量了这些CVD金刚石薄膜的电子发射特性。电子发射的阈值场强和发射电流密度分别为3.2 V/μm和4 mA/cn^2，明显优于一般微米级金刚石薄膜。

We have studied the stability of cesium oxide on CVD diamond, stability of photoelectron emission from cesium oxide covered CVD diamond and the field emission characteristics of nano-scale diamond.1)The about 3 ML cesium layers on CVD diamond turn to cesium super oxide by exposure of several Langumier of oxygenThis super oxide is stable when it is exposed to atmosphere. This super-oxide covered CVD diamond is one of the good candidate for ultra violet light photo cathode.2)We have succeeded in the production of nano size diamond crystal. The reduction in gas pressure during growth and application of voltage between hot filaments and substrates are affective to produce high-quality nano diamond crystal.3)We measured electron emission characteristics for these CVD diamond thin films. The threshold field strength for electron emission and emission current density are 3.2 V/μm and 4 mA/cn^2 which are much better than normal micro meter crystal size diamond films.