Application of Refractory-Metal Oxides to Electron-Beam Lithography

难熔金属氧化物在电子束光刻中的应用

• 批准号: 62550217
• 负责人: BABA Mamoru
• 金额: $ 0.9万
• 依托单位: Iwate University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1987
• 资助国家: 日本
• 起止时间: 1987 至 1988
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-62550217/
• 关键词: Electron-beam lithography; Diffusion in silicon; Refractory metal; Lift-off; Tungsten Oxides; Molybdenum oxides; Sputter etching; 酸化モリブデン; スパッタエッチング; 電子線レジスト; リソグラフィ; 耐熱性材料; 拡散マスク

1. Selective masking effects of a WO_3 electron resist have been investigated on phosphorus and boron diffusion to silicon. Though the diffusion coefficient of phosphorus in the WO_3 layer is about twice as that in the SiO_2 layer, the WO_3 resist is useful as a masking film for phosphorus diffusion at elevated temperatures around 1000 C. 2. It was found that an etching rate of MoO_3 in alkaline solution after electron exposure depend on the deposition conditions such as the rf sputtering power and the pressure of Ar gas. The MoO_3 film of two layers, of which the upper layer is harder to dissolve in the alkaline solution than the lower layer, results in the under-cutting structure after chemical etching. This structure serves as a suitable mask for the formation of lift-off pattern of subsequently deposited layers. using the MoO_3 resist of this property, we have succeeded in fabricating a lift-off pattern of SiO_2. The above method is simple and applicable to other materials. 3. We also found that the rate of Ar sputter-etching of the MoO_3 layer is 1/5 of that of Au layer. Using the MoO_3 mask of this property, Au fine patterns can be delineated by the Ar sputter-etching. The resistance to the sputter-etching suggests that the MoO_3 and WO_3 films will be applicable as selective masks to ionimplantation and other dry-etching processes.

1. 研究了WO_3电子抗蚀剂对磷和硼向硅扩散的选择性掩蔽效应。虽然磷在WO_3层中的扩散系数约为SiO_2层的两倍，但在1000℃左右的高温下，WO_3抗蚀剂可以作为磷扩散的掩蔽膜。结果表明，电子暴露后MoO_3在碱性溶液中的刻蚀速率与射频溅射功率和氩气压力等沉积条件有关。由于两层MoO_3膜的上一层比下一层更难溶于碱性溶液，导致化学蚀刻后的下切结构。该构造为后续沉积层的抬升模式的形成提供了合适的掩膜。利用这种性质的MoO_3抗蚀剂，我们成功地制作了SiO_2的剥离图案。上述方法简单，适用于其他材料。3. 我们还发现，MoO_3层的Ar溅射刻蚀速率是Au层的1/5。利用这种性质的MoO_3掩膜，可以通过Ar溅射刻蚀来描绘出Au的精细图案。对溅射刻蚀的抵抗表明MoO_3和WO_3薄膜可以作为离子注入和其他干刻蚀工艺的选择性掩膜。

项目成果

Mamoru,Baba: "Application of MoO_3 Electron Resist to Lift-Off Processes" Japanese Journal of Applied Physics.

Mamoru，Baba：“MoO_3电子抗蚀剂在剥离过程中的应用”日本应用物理学杂志。

Mamoru,Baba: "Fabrication of Au Fine Patterns by Ar Sputter-Etching Using MoO_3 Mask" Japanese Journal of Applied Physics.

Mamoru，Baba：“使用 MoO_3 掩模通过 Ar 溅射蚀刻制作金精细图案”日本应用物理学杂志。

Mamoru Baba: Japanese Jpurnal of Applied Physics.

Mamoru Baba：日本应用物理学杂志。

Mamoru,Baba: "Selective Masking Effects of WO_3 Resist on Impurity Diffusion and Oxidation in Silicon" Japanese Journal of Applied Physics. 26. 1561-1564 (1987)

Mamoru，Baba：“WO_3抗蚀剂对硅中杂质扩散和氧化的选择性掩蔽效应”日本应用物理学杂志。

Mamoru Baba: Japanese J. Appl. Phys. 26. 1561-1564 (1987)

Mamoru Baba：日本 J. Appl。