Optically Active Silicon-Based Nanostructured III-V Compound Semiconductors (OASIS)

点击翻译按钮获取中文摘要

A novel silicon-based hybrid material system will be developed and investigated, which may have in future a huge impact for the integration of electrooptically active devices on a silicon platform. In some preliminary experiments it could be proven that a full inclusion of III-V nanoclusters in a defect-free Si single crystal matrix is possible to realize. In this project this novel class of material will be further developed by molecular beam epitaxy and investigated by morphological (XRD, AFM, FIB-SEM, TEM) and optoelectronic studies (low-T PL, reflection and excitation spectroscopy, photocurrent and CV measurements). The work will be strongly supported by theory, which includes the simulation of growth processes far away from thermal equilibrium and the calculation of bandstructures and band offsets. For the first time, by comparing theory with optical and electrical measurements, a fundamental understanding of the optical, electrical and morphological properties will be developed.