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Demonstration of gate-tunable 2DEG surface polaritons in LaAlO3/SrTiO3 bilayers

Demonstration of gate-tunable 2DEG surface polaritons in LaAlO3/SrTiO3 bilayers
LaAlO3/SrTiO3 双层中栅极可调 2DEG 表面极化子的演示
批准号:
522417350
负责人:
Dr. Felix Gunkel
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
--
资助国家:
德国
项目状态:
未结题
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中文摘要
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英文摘要
In this follow-up proposal, we will address novel surface polaritons at atomically controlled oxide interfaces. Such surface polaritons enable a strong light-matter interaction on the nanoscale, which is not accessible in classical systems, and yield a wide range of nanooptical and polaritonic applications. In the first project phase of this proposal, we achieved a fundamental understanding of the optical near-field interaction of light and 2-dimensional electron gases generated at buried oxide interfaces. Moreover, we were able to correlate the detailed ionic structure of the interface to resulting electronic transport properties and magnetic signatures. Based on this gained knowledge, we are now able to probe the polaritonic behavior of the interface in the follow-up project phase. Major objective of this second project phase is the unambiguous demonstration of surface polaritons in these interface systems as well as the characterization and modelling of the full dispersion relation of these novel polaritonic states. In addition to that, we aim to systematically control the carrier density and vertical distribution of carriers at the interface via electric field effect, making it likely that also the polaritonic properties of the interface can be manipulated via electric-field-control. The demonstration of gate-tunable 2DEG polaritons will hence be subject to this follow-up proposal. For this, we will investigate LaAlO3/SrTiO3- bilayers, which will be gated from the thin films’ back-side. In this bilayer geometry, it is expected that the required gate voltage, typically in the range of hundreds of volts, can be reduced to a few volts or even toward the mV-range, drastically facilitating the field control. At the same time, the bilayer structure yields new scientific challenges toward understanding the interaction of electronic charge carriers and growth-induced crystal defects, which will be addressed within the scope of the follow-up project. In dedicated preliminary experiments, we were able to achieve a fundamental understanding of the optical properties of the electron gas and moreover found first experimental indication of surface polaritons at the LaAlO3/SrTiO3- interface. In addition, we were able to demonstrate that LaAlO3/SrTiO3-bilayers can be achieved with sufficient quality to obtain enhanced gating-behavior. Based on these results, we now aim to realize bilayer field-effect devices and unravel their polaritonic properties via nanooptical scanning probe microscopy and modelling. The intended demonstration of gate-tunable 2DEG polaritons will reflect a significant step toward realizing oxide-based nanooptical and polaritonic devices and will generate a major leap in fundamental understanding of matter-light-interactions on the nanoscale.
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Degradation-control of perovskite oxide OER catalysts under dynamic operation conditions via advanced operando characterization and orbital-d-band engineering
  • 批准号:
    493705276
  • 项目类别:
    Priority Programmes
  • 资助金额:
    $0.0万
  • 财政年份:
    --
  • 负责人:
    Dr. Felix Gunkel
  • 依托单位:
国内基金
海外基金
面向无人机应用的增强型p-gate AlGaN/GaN HEMT高功率微波辐射效应及 机理研究
二次外延势垒层的新型p-gate GaN HEMT器件栅极可靠性研究
直接带隙In2Se3、GaTe纳米片/MoS2复合薄膜的制备及饱和吸收性能的研究
  • 批准号:
    2020A151501861
  • 项目类别:
    省市级项目
  • 资助金额:
    10.0万元
  • 批准年份:
    2020
  • 负责人:
    龙慧
  • 依托单位:
二次外延AlGaN势垒层的增强型p-gate GaN HEMT新结构研究