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Research on ultra-high-speed operation of semiconductor optical integrated circuits

半导体光集成电路超高速运行研究

基本信息

批准号：
63302034
负责人：
SUEMATSU Yasuharu
金额：
$ 12.93万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Co-operative Research (A)
财政年份：
1988
资助国家：
日本
起止时间：
1988 至 1989
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63302034/
关键词：
optical integrated circuits optical modulator optical amplifier dynamic single mode laser quantum well structure surface emitting laser ultra high speed modulation ultra short pulse 半導体レーザ光スイッチ光導波路動的単一モードレーザ面発光レーザ可視光レーザ線幅

项目摘要

The main purpose of this research project is to investigate the method of ultra high speed modulation of semiconductor optical integrated circuit and to clarify the possibility of monolithic integration of optical devices such as high speed optical modulator and optical isolator. Specific results obtained in this research project are summarized as follows.We have fabricated high speed optical modulator and optical light sources. We have proved the possibility of ultra-high-speed operation of light emitting triode using quantum confined field effect. We have demonstrated the ultra high speed optical modulation at ultra high frequency band using resonant type electrode optical modulator. We have theoretically pointed out that the gain and refractive index variation can be enlarged one order of magnitude by increasing the quantum dimension (2 dimension: quantum wire, 3 dimension: quantum box). The quantum box optical switch/modulator was proposed and the high speed operation with low insertion loss were theoretically confirmed. The lasing operation of GaInAs/GaInAsP/InP quantum wire laser at pulsed (77K) condition was realized for the first time.New type of semiconductor lasers were fabricated to realize optical integrated circuit. Lasing operation of GaInP/AlInP-MQW laser with wavelength of 576nm was obtained at pulsed condition (109K). CW operation of AlGaAs/GaAs laser on Si substrate was obtained. The single facet output properties for high efficiency operation was achieved with a novel Distributed Reflector (DR) type,dynamic single mode laser.The characteristics of integrated type semiconductor laser were improved. The gain coupling type DFB laser was proposed and fabricated to realize stable single mode operation of dynamic single mode laser. The structure dependence of quantum well laser for the generation of ultra short pulse was clarified theoretically and experimentally. The two dimensional laser array was fabricated with surface emitting laser.

本研究计画的主要目的是探讨半导体光积体电路超高速调变的方法，并阐明高速光调变器、光隔离器等光学元件单片集成的可能性。具体研究成果如下：制作了高速光调制器和光源。我们证明了利用量子限制场效应实现发光二极管超高速工作的可能性。利用谐振型电极光调制器实现了超高频超高速光调制。我们从理论上指出，增加量子维数（二维：量子线，三维：量子盒），可以使增益和折射率的变化增大一个数量级。提出了一种量子盒型光开关/调制器，并从理论上证实了其具有低插入损耗的高速工作特性。首次实现了GaInAs/GaInAsP/InP量子线激光器在脉冲（77 K）条件下的激射运转，为实现光集成电路研制了新型半导体激光器。在脉冲条件下（109 K），获得了波长为576 nm的GaInP/AlInP-MQW激光器。在Si衬底上实现了AlGaAs/GaAs激光器的连续运转。采用一种新型的分布反射镜（DR）型动态单模激光器，实现了高效率运转的单端面输出特性，改善了集成型半导体激光器的特性。为了实现动态单模激光器的稳定单模运转，提出并研制了增益耦合型分布反馈激光器。从理论和实验上阐明了产生超短脉冲的量子阱激光器的结构依赖性。采用面发射激光器制作了二维激光器列阵。