Research on ultra-high-speed operation of semiconductor optical integrated circuits

点击翻译按钮获取中文摘要

The main purpose of this research project is to investigate the method of ultra high speed modulation of semiconductor optical integrated circuit and to clarify the possibility of monolithic integration of optical devices such as high speed optical modulator and optical isolator. Specific results obtained in this research project are summarized as follows.We have fabricated high speed optical modulator and optical light sources. We have proved the possibility of ultra-high-speed operation of light emitting triode using quantum confined field effect. We have demonstrated the ultra high speed optical modulation at ultra high frequency band using resonant type electrode optical modulator. We have theoretically pointed out that the gain and refractive index variation can be enlarged one order of magnitude by increasing the quantum dimension (2 dimension: quantum wire, 3 dimension: quantum box). The quantum box optical switch/modulator was proposed and the high speed operation with low insertion loss were theoretically confirmed. The lasing operation of GaInAs/GaInAsP/InP quantum wire laser at pulsed (77K) condition was realized for the first time.New type of semiconductor lasers were fabricated to realize optical integrated circuit. Lasing operation of GaInP/AlInP-MQW laser with wavelength of 576nm was obtained at pulsed condition (109K). CW operation of AlGaAs/GaAs laser on Si substrate was obtained. The single facet output properties for high efficiency operation was achieved with a novel Distributed Reflector (DR) type,dynamic single mode laser.The characteristics of integrated type semiconductor laser were improved. The gain coupling type DFB laser was proposed and fabricated to realize stable single mode operation of dynamic single mode laser. The structure dependence of quantum well laser for the generation of ultra short pulse was clarified theoretically and experimentally. The two dimensional laser array was fabricated with surface emitting laser.