课题基金 / 基金详情

Study on optically controlled optical devices

Study on optically controlled optical devices
光控光学器件的研究
批准号:
02302048
负责人:
SUEMATSU Yasuharu
金额:
$6.08万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Co-operative Research (A)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991

项目摘要

项目成果

SUEMATSU Yasuharu的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
The main purpose of this study is to establish the basis of optically controlled optical devices. Specific results obtained in this research are as follows.(a) Crystal growth for optically controlled optical devices :Ultra-fine structure such as Quantum-wire and quantum-box structure were fabricated using OMVPE growth technology.(b) Fabrication and basic theory of optically controlled optical devices :Nonlinear optical devices using semiconductor quantum well structure, optically controlled modulation devices using sub-band transition of quantum well structure, and integration type optical switch/modulator were fabricated and light emitting devices using the spontaneous emission control from quantum micro cavity was proposed.(c) Characteristics of optically controlled optical devices :The characteristics of optically controlled optical devices were theoretically investigated focusing on their ultra high speed operation.
期刊论文(23)
专著(0)
科研奖励(0)
会议论文
Y.Miyake: "Room temperature operation of GaInAsーGaInAsPーInP SCH multiーquantumーfilm laser with narrow wireーlike active region" IEEE Photon.Technol.Lett.3. 191-192 (1991)
Y. Miyake:“具有窄线状活性区域的 GaInAs-GaInAsP-InP SCH 多量子薄膜激光器的室温操作”IEEE Photon.Technol.Lett.3 (1991)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
T.Yamamoto: "OMVPE buried ultraーfine periodic structures in GaInAs and InP" Electron.Lett.26. 875-876 (1990)
T.Yamamoto:“OMVPE 在 GaInAs 和 InP 中埋入超精细周期结构”Electron.Lett.26 (1990)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
M.Watanabe: "Low temperature (〜420℃) epitaxial growth of CaF2/Si(111)by IonizedーClusterーBeam technique" Japan.J.Appl.Phys.29. 1803-1804 (1990)
M.Watanabe:“通过离子化-簇束-束技术实现CaF2/Si(111)的低温(~420℃)外延生长”Japan.J.Appl.Phys.29 1803-1804 (1990)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
K.G.Ravikumar: "Lowーdamage GaInAs(P)/InP nanometer structure by lowーpressure ECRーRIBE" Japan.J.Appl.Phys.29. L1744-L1746 (1990)
K.G.Ravikumar:“低压 ECR-RIBE 低损伤 GaInAs(P)/InP 纳米结构”Japan.J.Appl.Phys.29 (1990)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
18
    Digital Methods for Building and Presenting Technology Archives
    • 批准号:
      15300039
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $10.37万
    • 财政年份:
      2003
    • 负责人:
      SUEMATSU Yasuharu
    • 依托单位:
    Research on ultra-high-speed operation of semiconductor optical integrated circuits
    • 批准号:
      63302034
    • 项目类别:
      Grant-in-Aid for Co-operative Research (A)
    • 资助金额:
      $12.93万
    • 财政年份:
      1988
    • 负责人:
      SUEMATSU Yasuharu
    • 依托单位:
    Research of a hig-performance dynamic-single-mode laser
    • 批准号:
      60850060
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research
    • 资助金额:
      $11.78万
    • 财政年份:
      1985
    • 负责人:
      SUEMATSU Yasuharu
    • 依托单位:
    海外基金