Si Fin Optical Modulator for Low Power Interconnection

用于低功率互连的硅鳍光调制器

• 批准号: EP/M009416/1
• 负责人: Shinichi Saito
• 金额: $ 64.82万
• 依托单位: University of Southampton
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2014
• 资助国家: 英国
• 起止时间: 2014 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FM009416%2F1
• 关键词: Si; Fin; Optical; Modulator; Low

Si photonics is achieving a drastic innovation for optical networks in terms of low power, low cost, high bandwidth, and large-scale integration capabilities with smart electronics fabricated in ubiquitous infrastructures of Complementary-Metal-Oxide-Semiconductor (CMOS) foundries. Optical networks have been already introduced by using III-V compound semiconductors for long-hall communications, which require higher performance over the cost. Si photonics should not compete in this field, since the industries will not grow just by replacing these markets with Si photonics. Si Photonics is more promising in short-reach optical interconnections, which requires lower power consumption and lower fabrication costs. CMOS technologies are ideal in mass production to provide significant numbers of optical components required for short-reach communications such as backplane board-to-board, intra-board chip-to-chip, and intra-chip optical interconnections. Si optical modulators, which convert the electrical signals to the optical signals on a chip, are the most important building blocks for Si photonics. Here, we will develop the world's best low power Si modulators, which can be driven by the CMOS front-end driver circuitry. We will introduce the atomically flat Si fin technologies for the first time in optical modulators to develop the MOS-type Mach-Zehnder Interferometer (MZI) with a slot waveguide and the SiGe fin based Electro-Absorption (EA) modulators for short-reach interconnections and chip-to-chip applications, respectively. We anticipate that these devices will be widely used in data centres for cloud computing and network routing, contributing to reduce the power consumptions substantially, while increasing bandwidths. Our first target of Si fin MZI optical modulators is aiming for the near term application to C form-factor pluggable 100-Gigabit-ethernet (CFP100GE) in multi-source agreement (MSA) at the 1310-nm wavelength region. We think that this is a natural choice of technology, since we have no MSA at the wavelength of 1550-nm, and a MZI has a better technological-readiness-level over an EA modulator. For the longer term, however, a EA modulator can exceed its performance over MZI. Therefore, the other target for our SiGe fin EA modulator is the energy demanding chip-to-chip interconnection application by using the 1550-nm wavelength range, where no standardization exists at this moment. We will realize truly low power performance including a CMOS driver and laser diodes. Therefore, our project will cover both 1310-nm and 1550-nm wavelength ranges for near-term businesses and leading future technology trends.

硅光子学正在低功耗、低成本、高带宽和大规模集成能力方面实现光网络的重大创新，并与在互补金属氧化物半导体 (CMOS) 代工厂的无处不在的基础设施中制造的智能电子器件相结合。光网络已经通过使用 III-V 化合物半导体用于长厅通信而引入，这需要更高的性能和成本。硅光子不应该在这个领域竞争，因为仅仅用硅光子取代这些市场是不会让这个行业增长的。硅光子学在短距离光互连方面更有前景，这需要较低的功耗和较低的制造成本。 CMOS 技术非常适合大规模生产，可提供短距离通信所需的大量光学元件，例如背板板对板、板内芯片对芯片和芯片内光学互连。硅光调制器可将电信号转换为芯片上的光信号，是硅光子学最重要的构建模块。在这里，我们将开发世界上最好的低功耗硅调制器，它可以由 CMOS 前端驱动电路驱动。我们将首次在光调制器中引入原子级平坦的硅鳍片技术，以开发具有槽波导的MOS型马赫曾德干涉仪（MZI）和基于硅锗鳍片的电吸收（EA）调制器，分别用于短距离互连和芯片到芯片应用。我们预计这些设备将广泛应用于数据中心的云计算和网络路由，有助于大幅降低功耗，同时增加带宽。我们的 Si fin MZI 光调制器的第一个目标是近期应用于 1310 nm 波长区域的多源协议 (MSA) 中的 C 形状可插拔 100 吉比特以太网 (CFP100GE)。我们认为这是技术的自然选择，因为我们没有 1550 nm 波长的 MSA，而且 MZI 比 EA 调制器具有更好的技术准备水平。然而，从长远来看，EA 调制器的性能可能超过 MZI。因此，我们的 SiGe fin EA 调制器的另一个目标是使用 1550 nm 波长范围的能量要求较高的芯片到芯片互连应用，但目前尚无标准化。我们将实现真正的低功耗性能，包括 CMOS 驱动器和激光二极管。因此，我们的项目将涵盖 1310 nm 和 1550 nm 波长范围，用于近期业务并引领未来技术趋势。

项目成果

Low-loss silicon rectangular waveguides fabricated by anisotoropic wet etching for roughness reduction

采用各向异性湿法刻蚀降低粗糙度的低损耗硅矩形波导

• DOI: 10.1109/group4.2015.7305962
• 发表时间: 2015
• 作者: Arimoto H

10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

• DOI: 10.3389/fphy.2021.659585
• 发表时间: 2021-05
• 期刊: Palaeogeography, Palaeoclimatology, Palaeoecology
• 作者: J. Byers;K. Debnath;H. Arimoto;M. Husain;M. Sotto;J. Hillier;K. Kiang;D. Thomson;G. Reed;M. Charlton;S. Saito

Whispering gallery mode resonances from Ge micro-disks on suspended beams

• DOI: 10.3389/fmats.2015.00043
• 发表时间: 2015-01-01
• 期刊: FRONTIERS IN MATERIALS
• 影响因子: 3.2
• 作者: Al-Attili, Abdelrahman Zaher;Kako, Satoshi;Saito, Shinichi
• 通讯作者: Saito, Shinichi

Silicon slot fin waveguide on bonded double-SOI for a low-power accumulation modulator fabricated by an anisotropic wet etching technique.

用于通过各向异性湿法蚀刻技术制造的低功率累积调制器的键合双 SOI 上的硅槽鳍波导。

• DOI: 10.1364/oe.26.033180
• 发表时间: 2018
• 期刊: Optics express
• 影响因子: 3.8
• 作者: Byers J

Tensile strain of germanium micro-disks on freestanding SiO2 beams

独立式 SiO2 梁上的锗微盘的拉伸应变

• 发表时间: 2015
• 作者: A. Al-Attili