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Investigation on the Effect of in situ Plasma Supply During Growth of Polycrystalline Silicon Films by Low-Pressure Chemical Vapor Deposition, and on their Electric Conduction Properties

低压化学气相沉积多晶硅薄膜生长过程中原位等离子体供给及其导电性能的研究

基本信息

批准号：
63550011
负责人：
HASEGAWA Seiichi
金额：
$ 1.15万
依托单位：
Kanazawa University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1988
资助国家：
日本
起止时间：
1988 至 1989
项目状态：
已结题

项目摘要

Polycrystalline Si (poly-Si) films were prepared on a fused quartz substrate as a function of the rf power (0-30 W), deposition temperature (T_d = 620-770ﾟC) and hydrogen dilution ratio (H_2/SiH_4 = 0 to 8).1. Structural Changes and Stability against Foreign Contamination in Undoped Poly-Si films. As the rf power is increased, the preferential orientation to a random, <100> and <110> texture can be selected. The effect of rf plasma supply during the film growth on the structural properties was found to act as an equivalent effect to a decrease in T_d or a decrease in H_2/SiH_4 (an increase in the partial pressure of SiH_4). Furthermore, the plasma supply was found to have industrially useful effects for smoothing the film surface and improving the stability against foreign contamination such as oxygen. The structural change with the plasma supply was interpreted in terms of both of a change in deposition rate and a change in a surface-diffusion coefficient of SiH-related adsorbates. Th … More e improvement of surface roughness with the plasma supply was explained in terms of a sputtering effect which is likely to be also responsible for the structural change.2. Doping Efficiency. The doping efficiency for phosphorus and boron in poly-Si films deposited by plasma-enhanced chemical vapor deposition (PECVD) method was largely improved as compared with that in poly-Si films prepared by low-pressure CVD (LPCVD) without plasma supply. The structure of doped films was similar to that of undoped films. Also PECVD films had very smooth surface independent of doping level, though the roughness of LPCVD films largely increased in an intermediate doping range.3. Examination of Thin-Film transistors. The field-effect mobility for thin-film transistors fabricated on the undoped poly-Si films was investigated. The highest mobility was observed for PECVD films exhibiting a dominant <110> texture, while LPCVD films with a random texture had the lowest mobility. These results were discussed in terms of the crystallite size, preferential orientation and surface roughness. Less

在熔融石英衬底上制备多晶硅（poly-Si）薄膜，其随射频功率（0-30 W）、沉积温度（T_d = 620-770℃）和氢气稀释比（H_2/SiH_4 = 0 至 8）变化。 1．未掺杂多晶硅薄膜的结构变化和抗外来污染的稳定性。随着射频功率的增加，可以选择随机、<100> 和<110> 纹理的优先取向。发现薄膜生长过程中射频等离子体供应对结构性能的影响与T_d的降低或H_2/SiH_4的降低(SiH_4分压的增加)具有等效效果。此外，发现等离子体供应对于使膜表面平滑和提高对氧等异物污染的稳定性具有工业上有用的效果。等离子体供应引起的结构变化可以通过沉积速率的变化和 SiH 相关吸附物的表面扩散系数的变化来解释。等离子体供应对表面粗糙度的改善可以用溅射效应来解释，这也可能是结构变化的原因。2。掺杂效率。等离子体增强化学气相沉积(PECVD)法沉积的多晶硅薄膜中磷和硼的掺杂效率比低压CVD(LPCVD)法制备的多晶硅薄膜的磷和硼掺杂效率有很大提高。掺杂薄膜的结构与未掺杂薄膜的结构相似。此外，PECVD 薄膜具有非常光滑的表面，与掺杂水平无关，尽管LPCVD 薄膜的粗糙度在中间掺杂范围内大大增加。3．薄膜晶体管的检查。研究了在未掺杂多晶硅薄膜上制造的薄膜晶体管的场效应迁移率。观察到表现出主要<110>织构的PECVD薄膜具有最高的迁移率，而具有随机织构的LPCVD薄膜具有最低的迁移率。这些结果根据微晶尺寸、择优取向和表面粗糙度进行了讨论。较少的