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The preparation of high quality polycrystalline Si films at low temperature using PECVD.

利用PECVD低温制备高质量多晶硅薄膜。

基本信息

批准号：
09450124
负责人：
HASEGAWA Seiichi
金额：
$ 8.32万
依托单位：
Kanazawa University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

项目摘要

The subject of this research is the preparation of highly crystallized polycrystalline Si films at low temperature using a plasma-enhanced chemical vapor deposition (PECVD) system, by utilizing effects of etching on the growing surface of films and those of a change in the surface morphology of substrates. In the present work, we investigated the changes in the crystalline qualily as follows : Effects of SiFィイD24ィエD2 addition to a SiHィイD24ィエD2 feed gas. (2) Effects of HィイD22ィエD2 addition in addition to SiFィイD24ィエD2 in (1), (3) effects of a change in deposition temperature. And (4) effects of plasma-pretreatment on substrates prior to the deposition of Si films under fixed conditions. As a result, (1) the SiFィイD24ィエD2 addition enhances the crystallization of films deposited at a low temperature, but high flow-rate conditions of SiFィイD24ィエD2 caused an increase in the density of O atoms incorporated in the Si films after deposition. (2) The addition of HィイD22ィエD2 in addition to SiFィイD24ィエD2 under low temperature conditions further enhanced the crystallinity, but decreased the size of crystal grains. Furthermore, the HィイD22ィエD2 addition acted to suppress the incorporation of O atoms after deposition as stated in the above item (1). (3) The crystal quality of Si films strongly depended on the deposition temperature, Td : Under conditions of Td < 150 ℃ and Td * 650 ℃, the crystallization of the Si films was suppressed and the film structure was amorphous. (4) When Si films were deposited on substrates subjected to pretreatment of plasma using CFィイD24ィエD2, NィイD22ィエD2, and/or HィイD22ィエD2, the crystallinity of the Si films was enhanced. Such enhanced crystallinity was connected with preparation of substrates with a proper degree of surface roughness. Thus, the addition of SiFィイD24ィエD2 and HィイD22ィエD2 to a SiHィイD24ィエD2 feed gas and the plasma pretreatment of substrates are useful technologies for fabricating highly crystallized polycrystalline Si films at low temperature.

本研究的主题是在低温下使用等离子体增强化学气相沉积（PECVD）系统，通过利用对薄膜生长表面的蚀刻和衬底表面形貌的变化的影响，制备高度结晶的多晶Si薄膜。在目前的工作中，我们研究了结晶质量的变化如下：SiF-24-D24-D2除了SiH-24-D24-D2原料气的影响。(2)在（1）、（3）中，除了SiF掺杂D24掺杂D2之外，还添加H掺杂D22掺杂D2的影响，成膜温度的变化的影响。（4）在一定条件下，等离子体预处理对沉积硅膜的影响。其结果是，（1）添加SiF_xD_24_xD_2时，低温下的成膜的结晶化增强，但在SiF_xD_24_xD_2的高流量条件下，成膜后的Si膜中的氧原子密度增加。(2)在低温条件下，除了SiF_（24）Al_（22）Al_（此外，如上述第（1）项所述，添加HイD22 D2具有抑制沉积后O原子掺入的作用。(3)沉积温度对Si薄膜的结晶质量有很大的影响，在Td < 150 ℃和Td * 650 ℃的条件下，Si薄膜的晶化受到抑制，薄膜结构为非晶态。(4)当Si膜沉积在经受使用CF_（24）N_（22）N_（这种增强的结晶度与制备具有适当程度的表面粗糙度的衬底有关。因此，向SiH_（24）Si_（22）Si_（24）Si_（22）Si_（24）Si_（22）Si_（24）