The preparation of high quality polycrystalline Si films at low temperature using PECVD.

本研究的主题是利用等离子体增强化学气相沉积（PECVD）系统在低温下制备高结晶化聚结晶硅薄膜，通过利用薄膜生长表面的薄膜和表面形态学中的变化的影响来处理。In the present work， we investigated the changes in the crystalline qualily as follows ： Effects of SiFイイD24イエD2 addition to a SiHイD24イエD2 feed gas。（2） Effects of H？D22？D2 addition in addition to SiF？D24？D2 in （1）， （3） effects of a change in deposition temperature。和（4）等离子体对沉积物前体的影响-沉积在固定条件下的硅薄膜。As a result， （1） the SiF-D24-D2 addition enhances the crystalliization of films deposited at a low temperature， but high flow-rate conditions of SiF-D24-D2 caused an increase in the density of O atoms incorporated in the Si films after deposition。（2） The addition of Hy D22 y D2 in addition to SiF y D24 y D2 under low temperature conditions further enhanced the crystallinity， but decreased the size of crystal gains。Furthermore， the H-D22-D2 addition acted to suppress the incorporation of O atoms after deposition as stated in the above item （1）。（3）硅薄膜的晶体质量强烈依赖于沉积温度， Td ：在Td < 150 ℃和Td * 650 ℃的条件下，硅薄膜的晶体化程度不足，薄膜结构异常。（4） When Si films were deposited on substrates subjected to pretreatment of plasma using CFイD24イイD2， NイイD22イエD2， and/or HイD22イエD2， the crystallinity of the Si films was enhanced。这种增强的水晶石与表面粗糙度的准备相连接，并与一个真正的水平的基底相结合。Thus， the addition of SiF-D24-D2 and H-D22-D2 to a SiH-D24-D2 feed gas and the plasma pretreatment of substrates are useful technologies for fabricating highly crystallized polycrystalline Si films at low temperature。

The subject of this research is the preparation of highly crystallized polycrystalline Si films at low temperature using a plasma-enhanced chemical vapor deposition (PECVD) system, by utilizing effects of etching on the growing surface of films and those of a change in the surface morphology of substrates. In the present work, we investigated the changes in the crystalline qualily as follows : Effects of SiFィイD24ィエD2 addition to a SiHィイD24ィエD2 feed gas. (2) Effects of HィイD22ィエD2 addition in addition to SiFィイD24ィエD2 in (1), (3) effects of a change in deposition temperature. And (4) effects of plasma-pretreatment on substrates prior to the deposition of Si films under fixed conditions. As a result, (1) the SiFィイD24ィエD2 addition enhances the crystallization of films deposited at a low temperature, but high flow-rate conditions of SiFィイD24ィエD2 caused an increase in the density of O atoms incorporated in the Si films after deposition. (2) The addition of HィイD22ィエD2 in addition to SiFィイD24ィエD2 under low temperature conditions further enhanced the crystallinity, but decreased the size of crystal grains. Furthermore, the HィイD22ィエD2 addition acted to suppress the incorporation of O atoms after deposition as stated in the above item (1). (3) The crystal quality of Si films strongly depended on the deposition temperature, Td : Under conditions of Td < 150 ℃ and Td * 650 ℃, the crystallization of the Si films was suppressed and the film structure was amorphous. (4) When Si films were deposited on substrates subjected to pretreatment of plasma using CFィイD24ィエD2, NィイD22ィエD2, and/or HィイD22ィエD2, the crystallinity of the Si films was enhanced. Such enhanced crystallinity was connected with preparation of substrates with a proper degree of surface roughness. Thus, the addition of SiFィイD24ィエD2 and HィイD22ィエD2 to a SiHィイD24ィエD2 feed gas and the plasma pretreatment of substrates are useful technologies for fabricating highly crystallized polycrystalline Si films at low temperature.