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Development of Infra-Red Spectroscopy for the Nivestigation of High Temperature Gasdous Species and its Application to Halide Species.

Development of Infra-Red Spectroscopy for the Nivestigation of High Temperature Gasdous Species and its Application to Halide Species.
用于研究高温气体物质的红外光谱法的发展及其在卤化物物质中的应用。
批准号:
63550496
负责人:
FUWA Akio
金额:
$1.22万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1988
资助国家:
日本
项目状态:
已结题
起止时间:
1988 至 1990

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中文摘要
翻译
在这项调查中,CVD反应器系统的热壁类型的沉淀反应分析,其中红外光谱法被纳入的气体物种识别。研究了950 ~ 1300 K温度范围内氢稀释三氯硅烷沉淀硅反应的动力学。研究结果表明:(1)反应速率的温度依赖性存在两个明显的区域,其转变温度在1200 K附近;较低温度区域的活化能为62.1千卡/摩尔,后者区域的活化能为2.2千卡/摩尔。(2)通过对气态物质的红外光谱分析,在1020 K附近观察到二氯硅烷的最大浓度。实验结果表明,在较低温度下,反应机理为:SiHCl_3(g)+ H_2(g)= SiH_2Cl_2(g)+ HCl(g)SiH_2Cl_2(g)= SiCl_2(g)+ H_2(g)SiCl_2(g)= Si(s)+ 2 HCl(g)。从这一观察,4SiHCl_3(g)= Si(s)+3SiCl_4(g)+ H_2(g)2SiH_2Cl_2(g)= Si(s)+ SiCl_4(g)+2H_2(g)(3)在本实验范围内,反应与三氯硅烷的浓度呈一级反应,上述反应均为一级反应。对本研究进行了总结,并对反应机理作了进一步的研究。
英文摘要
In this investigation, a CVD reactor system of hot-wall type for precipitation reaction analysis was constructed, in which a infra-red spectroscopy was incorporated for the gas species identification. The kinetic analysis of silicon precipitation reaction from tri-chlorosilane diluted by hydrogen was studied at temperatures from 950 K to 1300 K. The followings are the results of this investigation :(1) There were two distinct regions in the temperature dependency of the reaction rate where the transition temperature was around 1200 K. The activation energy for the lower temperature region was 62.1 Kcal/mole and the one for the latter region was 2.2 Kcal/mole.(2) Through the infra-red spectroscopic analysis of the gaseous species, there was observed a maximum concentration of di-chlorosilane at around 1020 K. This observation suggests that the following reaction mechanism at the lower temperatures ;SiHCl_3 (g) + H_2 (g) = SiH_2Cl_2 (g) + HCl (g)SiH_2Cl_2 (g) = SiCl_2 (g) + H_2 (g)SiCl_2 (g) = Si (s) + 2 HCl (g)Above 1020 K, silicon tetrachloride had gradually increased and di-chlorosilane decreased. From this observation,4 SiHCl_3 (g) = Si (s) + 3 SiCl_4 (g) + H_2 (g)2 SiH_2Cl_2 (g) = Si (s) + SiCl_4 (g) + 2 H_2 (g)(3) The reaction was the first order with the concentration of tri-chlorosilane in the experimental region of this study.The above-mentioned is the summary of this investigation and the further study into the reaction mechanism is planned at present.
期刊论文(4)
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会议论文
M.Sugiura,T.Shimano,H.Kurita and A.Fuwa: "Silicon Precipitaion Reaction Analysis from SiHCl_3by IntraーRed SPectroscopy" Journal of Electrochemical Society.
M.Sugiura、T.Shimano、H.Kurita 和 A.Fuwa:“通过红外光谱法对 SiHCl_3 进行硅沉淀反应分析”电化学学会杂志。
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通讯作者:
M.Sugiura,T.Shimano,H.Kurita,and A.Fuwa: "Silicon Precipitation Reactoin Analysis from SiHCl_3 by InfraーRed Spectroscopy" Journal of Electrochemical Society.
M.Sugiura、T.Shimano、H.Kurita 和 A.Fuwa:“通过红外光谱法对 SiHCl_3 进行硅沉淀反应分析”电化学学会杂志。
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通讯作者:
M. Sugiura, T. Shimano, H. Kurita, and A. Fuwa: "Silicon Precipitation Reaction Analysis From Tri-Chlorosilane By Infra-Red Spectroscopy" J. Electrochem. Soc.
M. Sugiura、T. Shimano、H. Kurita 和 A. Fuwa:“通过红外光谱法对三氯硅烷进行硅沉淀反应分析”J. Electrochem。
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通讯作者:
T.Shimano,M.Sugiura and A.Fuwa: "Reaction Analysis of Hydrogen Reduction of Silicon Tri-chloride Gas" J.Electrochem.Soc.
T.Shimano、M.Sugiura 和 A.Fuwa:“三氯化硅气体的氢还原反应分析”J.Electrochem.Soc。
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通讯作者:
Fundamental study on Titanium electro-wining from TiCl2(In-situ formed)-KCl-NaCl molten salt
  • 批准号:
    23656481
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
  • 资助金额:
    $1.83万
  • 财政年份:
    2011
  • 负责人:
    FUWA Akio
  • 依托单位:
Fundamental Study on a new titanium production process utilizing titanium sub-chlorides
  • 批准号:
    16360378
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 资助金额:
    $5.82万
  • 财政年份:
    2004
  • 负责人:
    FUWA Akio
  • 依托单位:
Mechanism Elucidation of Dioxins Decomposition on an oxide catalysis using Ab-initio molecular orbiral calculation
  • 批准号:
    14550729
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $2.18万
  • 财政年份:
    2002
  • 负责人:
    FUWA Akio
  • 依托单位:
Deposition Behaviors of Co-Ni and Co-Fe alloys by Electrochemical Graphoepitaxy
  • 批准号:
    12650741
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $2.43万
  • 财政年份:
    2000
  • 负责人:
    FUWA Akio
  • 依托单位:
海外基金