Development of Infra-Red Spectroscopy for the Nivestigation of High Temperature Gasdous Species and its Application to Halide Species.

用于研究高温气体物质的红外光谱法的发展及其在卤化物物质中的应用。

• 批准号: 63550496
• 负责人: FUWA Akio
• 金额: $ 1.22万
• 依托单位: Waseda University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63550496/
• 关键词: Infra-Red Spectroscopy; Reaction Kinetic Analysis; Silicon; Precipitation; Reaction Mechanism; Tri-Chlorosilane; in-situ分析; ハロゲン精錬

In this investigation, a CVD reactor system of hot-wall type for precipitation reaction analysis was constructed, in which a infra-red spectroscopy was incorporated for the gas species identification. The kinetic analysis of silicon precipitation reaction from tri-chlorosilane diluted by hydrogen was studied at temperatures from 950 K to 1300 K. The followings are the results of this investigation :(1) There were two distinct regions in the temperature dependency of the reaction rate where the transition temperature was around 1200 K. The activation energy for the lower temperature region was 62.1 Kcal/mole and the one for the latter region was 2.2 Kcal/mole.(2) Through the infra-red spectroscopic analysis of the gaseous species, there was observed a maximum concentration of di-chlorosilane at around 1020 K. This observation suggests that the following reaction mechanism at the lower temperatures ;SiHCl_3 (g) + H_2 (g) = SiH_2Cl_2 (g) + HCl (g)SiH_2Cl_2 (g) = SiCl_2 (g) + H_2 (g)SiCl_2 (g) = Si (s) + 2 HCl (g)Above 1020 K, silicon tetrachloride had gradually increased and di-chlorosilane decreased. From this observation,4 SiHCl_3 (g) = Si (s) + 3 SiCl_4 (g) + H_2 (g)2 SiH_2Cl_2 (g) = Si (s) + SiCl_4 (g) + 2 H_2 (g)(3) The reaction was the first order with the concentration of tri-chlorosilane in the experimental region of this study.The above-mentioned is the summary of this investigation and the further study into the reaction mechanism is planned at present.

在本研究中，我们建立了一个热壁式化学气相沉积反应分析系统，将红外光谱用于气体物种的鉴定。研究了氢气稀释三氯硅烷在950~1300K温度范围内的反应动力学，结果表明：(1)反应速率随温度变化有两个明显的区域，其转变温度约为1200K，低温区的活化能为62.1Kcal/mole，后者的活化能为2.2Kcal/mole.(2)通过对气体物种的红外光谱分析，在1020K附近观察到二氯硅烷的最大浓度.SiHCl_3(G)+H_2(G)=SiH_2Cl2(G)+HCl(G)SiH_2Cl2(G)=SiCl2(G)+H_2(G)SiCl2(G)=Si(S)+2HCl(G)在1020K以上，四氯化硅逐渐增加，二氯硅烷减少。由此得出：4SiHCl_3(G)=Si(S)+3SiCl4(G)+H_2(G)2SiH_2Cl2(G)=Si(S)+SiCl4(G)+2H_2(G)(3)在本实验范围内，三氯硅烷的浓度为一级反应。

项目成果

M.Sugiura,T.Shimano,H.Kurita and A.Fuwa: "Silicon Precipitaion Reaction Analysis from SiHCl_3by IntraーRed SPectroscopy" Journal of Electrochemical Society.

M.Sugiura、T.Shimano、H.Kurita 和 A.Fuwa：“通过红外光谱法对 SiHCl_3 进行硅沉淀反应分析”电化学学会杂志。

M.Sugiura,T.Shimano,H.Kurita,and A.Fuwa: "Silicon Precipitation Reactoin Analysis from SiHCl_3 by InfraーRed Spectroscopy" Journal of Electrochemical Society.

M.Sugiura、T.Shimano、H.Kurita 和 A.Fuwa：“通过红外光谱法对 SiHCl_3 进行硅沉淀反应分析”电化学学会杂志。

M. Sugiura, T. Shimano, H. Kurita, and A. Fuwa: "Silicon Precipitation Reaction Analysis From Tri-Chlorosilane By Infra-Red Spectroscopy" J. Electrochem. Soc.

M. Sugiura、T. Shimano、H. Kurita 和 A. Fuwa：“通过红外光谱法对三氯硅烷进行硅沉淀反应分析”J. Electrochem。

T.Shimano,M.Sugiura and A.Fuwa: "Reaction Analysis of Hydrogen Reduction of Silicon Tri-chloride Gas" J.Electrochem.Soc.

T.Shimano、M.Sugiura 和 A.Fuwa：“三氯化硅气体的氢还原反应分析”J.Electrochem.Soc。