Preparation of ion conductive thin films in reaction field assisted by some excitation method

激发法辅助反应场制备离子导电薄膜

• 批准号: 09650815
• 负责人: FUWA Akio
• 金额: $ 2.3万
• 依托单位: Waseda University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650815/
• 关键词: YSZ; MOCVD; Thin films; Crystal structure; 導電率; 複合反応場; イオン導電性

Yttria-Stabilized Zirconia (YSZ) has high potential to be used as an electrolyte of solid-oxide fuel cell (SOFC). However the high generation-efficiency of SOFC has not been yet achieved due to the high internal of bulk electrolyte. The resistance becomes lower with the decrease of electrolyte thickness. The aim of this study is the low-temperature preparation of YSZ thin films by plasma-enhanced metal organic chemical vapor deposition (PEMOCVD). YSZ solid electrolye thin films were prepared from Zr (t-OCィイD24ィエD2HィイD29ィエD2)ィイD24ィエD2, Y (CィイD211ィエD2HィイD219ィエD2OィイD22ィエD2)ィイD23ィエD2 and evaluated the crystallization. The composition of YSZ thin films was controlled by the change of the vapor pressure of precursors and analyzed by XRF. Relationship between the change of Y-concentration in the thin films and the structural characterizations were examined from the measurement of SEM, XRD and conducitivity by complex impedance plot. The effect of the plasma-enhanced reaction was clarified by … More the comparison of the YSZ thin films prepared by PEMOCVD and thermal MOCVD from the viewpoint of the microscopic structure and the residual carbon. These properties were examined by measurement of SEM and FT-IR spectrum.In the first year, inductively-coupled RF plasma-enhanced metal organic chemical vapor deposition apparatus was produced. In the second year, YSZ thin films (in the composition range 3.1〜5.1mol% Y) could be prepared. The crystal structure was the mixture of monoclinic and cubic. The conductivity became higher with the increase of Y-content in the thin films. However, the conductivity was lower than bulk materials two digit. In this year, YSZ thin films (in the composition range 3〜12mol% YィイD22ィエD2OィイD23ィエD2) could be prepared. Y/Zr ratio in the YSZ thin films was found to be lower than the Y (CィイD211ィエD2HィイD219ィエD2OィイD22ィエD2)ィイD23ィエD2/Zr(t-OCィイD24ィエD2HィイD29ィエD2)ィイD24ィエD2 raito.These results indicate that the Y is difficult to be solute in the preparation films. The crystal structure of these compositions was cubic by returning predicition of the phase diagram. The surface morphology was denser with the increase of Y-content in the YSZ thin films and by applying the plasma. The residual carbon originated for the C-H bond was decreased by the plasma-enhanced reaction. Less

氧化钇稳定氧化锆（YSZ）作为固体氧化物燃料电池（SOFC）的电解质具有很大的潜力。然而，固体氧化物燃料电池的高发电效率还没有实现，由于高内部的本体电解质。电阻随电解质厚度的减小而减小。本研究的目的是利用等离子体增强金属有机化学气相沉积（PEMOCVD）低温制备YSZ薄膜。以Zr（t-OC）2D 24 H2 D29 H2 D2）2D 24 H2 D2，Y（C）2D 211 H2 D2 H2 D219 H2 D2 O H2 D22 H2 D2）2D 23 H2 D2为原料制备了YSZ固体电解质薄膜，并对其晶化进行了评价。通过改变前驱体的蒸气压来控制YSZ薄膜的成分，并利用X射线荧光光谱仪进行了分析。通过SEM、XRD和复阻抗法测试薄膜的电导率，研究了薄膜中钇离子浓度的变化与薄膜结构的关系。等离子体增强反应的效果通过以下方式澄清： ...更多信息 从微观结构和残余碳的角度对PEMOCVD和热MOCVD制备的YSZ薄膜进行了比较。第一年研制出电感耦合射频等离子体增强金属有机化学气相沉积装置。在第二年，可以制备YSZ薄膜（在3.1 ~ 5.1mol%Y的组成范围内）。晶体结构为单斜和立方的混合体。薄膜的电导率随Y含量的增加而增大。但电导率比体材料低两位数。在这一年中，可以制备YSZ薄膜（在3 - 12mol%Y掺杂D22掺杂D2 O掺杂D23掺杂D2的组成范围内）。YSZ薄膜中的Y/Zr比小于Y（C_（211）O_（219）O_（22）O_（23）O_（24）O_（29）O_（24）O_（29）O_（22）O_（23）O_（24）O_通过相图回归预测，这些化合物的晶体结构为立方晶系。随着YSZ薄膜中Y含量的增加和等离子体的施加，表面形貌更加致密。通过等离子体增强反应，减少了C-H键的残余碳。少