Preparation of ion conductive thin films in reaction field assisted by some excitation method

Yttria-Stabilized Zirconia （YSZ） has high potential to be used as an electrolyte of Solid-oxide fuel cell （SOFC）。However the high generation-SOFC的高生成效率还没有达到高内部的bulk electrolyte。“抵抗力变得更低，因为电解质厚度的退化。”本研究的目标是利用等离子体增强金属有机化学气相沉积（PEMOCVD）对YSZ薄膜的低温度准备。YSZ solid electrolye thin films were prepared from Zr （t-OCイイD24イエD29イエD2）イイD24イエD2， Y （CイD211イエD219イエD2OイイD22イエD2）イイD23イエD2 and evaluated the crystalliization。YSZ薄膜的组成是由XRF的预冷凝器和分析的蒸汽压力的变化控制的。Y型变化之间的关系-通过复杂影响图对SEM、XRD和行为的测量进行了分析。等离子体增强反应的影响已被澄清。 ... More 由PEMOCVD和热MOCVD制作的YSZ薄膜的比较，从微观结构和永久碳的视点。这些特性是根据SEM和FT-IR光谱的测量进行的。在第一年，工业耦合射频等离子体增强的金属有机化学气相沉积装置被生产出来。在第二年， YSZ薄膜（成分范围为3.1 - 5.1摩尔% Y）可以准备好。水晶结构是单色和立方体的混合体。“行为变得更高，Y内容在薄电影中的增加。”However，这种行为比散装材料要低两个数字。在这一年， YSZ薄膜（在组合范围3 ~ 12 mol % Y Y D22 Y D2 O Y D23 Y D2）可以准备。Y/Zr ratio in the YSZ thin films was found to be lower than the Y （C型D211型D219型D2 O型D22型D2）型D23型D2/Zr（t-OC型D24型D29型D2）型D24型D2 raito。These results indicate that the Y is difficult to be solute in the preparation films。这些组合物的晶体结构是由相位图表的预测产生的立方体。表面形态学是一个具有YSZ薄膜中Y含量增加的皮肤，并通过应用等离子体。对C-H债券的局部碳产生是由等离子体增强反应降解的。Less（低）

Yttria-Stabilized Zirconia (YSZ) has high potential to be used as an electrolyte of solid-oxide fuel cell (SOFC). However the high generation-efficiency of SOFC has not been yet achieved due to the high internal of bulk electrolyte. The resistance becomes lower with the decrease of electrolyte thickness. The aim of this study is the low-temperature preparation of YSZ thin films by plasma-enhanced metal organic chemical vapor deposition (PEMOCVD). YSZ solid electrolye thin films were prepared from Zr (t-OCィイD24ィエD2HィイD29ィエD2)ィイD24ィエD2, Y (CィイD211ィエD2HィイD219ィエD2OィイD22ィエD2)ィイD23ィエD2 and evaluated the crystallization. The composition of YSZ thin films was controlled by the change of the vapor pressure of precursors and analyzed by XRF. Relationship between the change of Y-concentration in the thin films and the structural characterizations were examined from the measurement of SEM, XRD and conducitivity by complex impedance plot. The effect of the plasma-enhanced reaction was clarified by … More the comparison of the YSZ thin films prepared by PEMOCVD and thermal MOCVD from the viewpoint of the microscopic structure and the residual carbon. These properties were examined by measurement of SEM and FT-IR spectrum.In the first year, inductively-coupled RF plasma-enhanced metal organic chemical vapor deposition apparatus was produced. In the second year, YSZ thin films (in the composition range 3.1〜5.1mol% Y) could be prepared. The crystal structure was the mixture of monoclinic and cubic. The conductivity became higher with the increase of Y-content in the thin films. However, the conductivity was lower than bulk materials two digit. In this year, YSZ thin films (in the composition range 3〜12mol% YィイD22ィエD2OィイD23ィエD2) could be prepared. Y/Zr ratio in the YSZ thin films was found to be lower than the Y (CィイD211ィエD2HィイD219ィエD2OィイD22ィエD2)ィイD23ィエD2/Zr(t-OCィイD24ィエD2HィイD29ィエD2)ィイD24ィエD2 raito.These results indicate that the Y is difficult to be solute in the preparation films. The crystal structure of these compositions was cubic by returning predicition of the phase diagram. The surface morphology was denser with the increase of Y-content in the YSZ thin films and by applying the plasma. The residual carbon originated for the C-H bond was decreased by the plasma-enhanced reaction. Less