Spinodal Decomposition of Alloy Semiconductors Studied by Physical Metallurgical Techniques

物理冶金技术研究合金半导体的旋节线分解

• 批准号: 01550508
• 负责人: TAKEDA Seiji
• 金额: $ 1.28万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550508/
• 关键词: Alloy Semiconductor; Ga-As-P compound; Transmission Electron Microscopy; Compositional Fluctuation; 濃度変動; 透温電子顕微鏡法; スピノ-ダル分解

Structural property of thin layers of alloy-semiconductors has been investigated by means of transmission electron microscopy. The specimens observed in the present study were Ga-As-P, Zn-Se-S, Ga-Al-As and Ga-In-Al-As. The results of observation are summarized as follows.1. One-dimensional compositional fluctuation in Ga-As-PThe material was grown by the VPE method on a GaP substrate. Fringe contrast was observed in dark field electron micrographs. This contrast results from the compositional fluctuation of As and P in a specimen. It was shown that the fluctuation was due to rotation of the substrate during crystal growth.We defined the chemical sensitivity of a dark field image, i. e. The compositional derivative of image intensity. Analysis of a image intensity based on the chemical sensitivity indicated that a 200-type reflection was useful in detecting the compositional fluctuation and that a image with another reflection like 220 also has high sensitivity in some restricted exper … More imental condition. This kind of analysis will be useful to detect compositional fluctuation caused by the spinodal decomposition in alloy semiconductors.2. Interface structure in a strained layer super-lattice Zn-Se-SThe material was fabricated by the MOCVD method. Thin layers of the two compounds ZnS and ZnSe were stacked alternately. Misfit of lattice parameters of the two compounds was considerably large and the very wavy interface was observed.3. Ga-As-Al alloys grown by the LPE methodThe constitutional elements, Ga and Al were well homogenized and no compositional fluctuation was detected.4. Ga-In-Al-As alloys grown by MBE methodIt is well known that the alloy system exhibited the spinodal decomposition. However, the compositional fluctuation was not observed so far in the present specimens. It may be suggested that the growth method or growth temperature is related to the compositional fluctuation.Heat treatment of thin foil specimens causes some evaporation of constitutional elements. In order to avoid this, we are planning to continue the Less

用透射电子显微镜研究了合金半导体薄层的结构性质。本研究中观察到的样品为Ga-As-P、Zn-Se-S、Ga-Al-As和Ga-In-Al-As。观测结果总结如下：1.观测结果。Ga-As-P中的一维成分起伏材料是用真空气相外延方法在GaP衬底上生长的。在暗场电子显微镜下观察到条纹对比。这种对比是由于样品中As和P的成分波动造成的。我们定义了暗场像的化学敏感度，即像强度的成分导数。基于化学灵敏度的图像强度分析表明，200型反射在检测成分波动中是有用的，并且具有类似220的另一种反射的图像在某些受限的Exper…中也具有高灵敏度更重要的条件。这种分析将有助于检测合金半导体中由调幅分解引起的成分波动。采用MOCVD方法制备了应变层超晶格锌硒硫材料的界面结构。硫化锌和硒锌两种化合物的薄层交替堆积。两种化合物的晶格参数失配较大，界面呈波浪状。采用LPE法制备的Ga-As-Al合金，其组成元素Ga、Al分布均匀，无成分波动。用分子束外延方法生长了Ga-In-Al-As合金。众所周知，该合金体系呈现调幅分解。然而，到目前为止，在本样本中没有观察到成分波动。可以认为，生长方法或生长温度与成分的波动有关，薄膜样品的热处理会导致组成元素的部分蒸发。为了避免这种情况，我们计划继续减少

项目成果

S.Takeda,M,Hirata,S.Muto G.C.Hua,K.Hiraga and M.Kiritani.: "HRTEM Obserration of ElectronーIrradiationーInduced Defects Penetratig through a Thil of Germoridm" Ultranicroscopy. (1991)

S. Takeda、M、Hirata、S. Muto G. C. Hua、K. Hiraga 和 M. Kiritani.：“电子辐射的 HRTEM 观察 - 穿过 Germoridm 的诱导缺陷”（1991 年）。

S.Takeda,M.Hirata,T.Sato,H.Fujita and K.Fujii ed.K.Sumino: "Detects and Microstructure in Vapor Phase Epitaxial Grown GaAsxP_<1ーx>1GaP" Detect Control in Semiconductors. 1111-1116 (1990)

S.Takeda、M.Hirata、T.Sato、H.Fujita 和 K.Fujii ed.K.Sumino：“气相外延生长 GaAsxP_<1-x>1GaP 中的检测和微观结构”半导体检测控制 1111-1116。 (1990)

S. Takeda, M. Hirata, S. Muto, G. C. Hua, K. Hiraga and M. Kiritani: "HRTEM Observation of Electron-Irradiation-Induced Defects Penetrating through a Thin Foil of Germanium" Ultramicroscopy. (1991)

S. Takeda、M. Hirata、S. Muto、G. C. Hua、K. Hiraga 和 M. Kiritani：“穿透锗薄箔的电子辐照诱发缺陷的 HRTEM 观察”超显微术。

S.takeda,S.Muto and M.Hirata: "Transmission Electron Diffraction Patterns of ElectronーIrradiationーInduced{113}ーFaulted Loops in Si" Jpn.J.Appl.Phys.29. L1698-L1701 (1990)

S.takeda、S.Muto 和 M.Hirata：“电子的透射电子衍射图案－辐照－感应{113}－Si 中的故障环”Jpn.J.Appl.Phys.29 (1990)。

竹田精治: "競合する相互作用と一次元長周期構造" 日本金属学会報. 28. 872-879 (1989)

Seiji Takeda：“竞争相互作用和一维长周期结构”日本金属研究所公报 28. 872-879 (1989)。