Structure Analysis of Point-Defect-Aggregates in Semiconductors by Means of Crystallographic Techniques

利用晶体学技术分析半导体中点缺陷聚集体的结构

• 批准号: 03680047
• 负责人: TAKEDA Seiji
• 金额: $ 0.96万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03680047/
• 关键词: semiconductors; point defect; interstitial atom; electron irradiation; ion implantation; electron diffraction; hydrogen; transmission electron microscopy; シリコン; 電子線電射; イオン電射; ロッドライクディフェクト; 電子顕微鏡

Point defects in a semiconducting material are introduced during crystal growth, heat treatment, electron irradiation and ion-implantation. It is well known that they gave a considerable chance to aggregate at elevated temperatures. Atomic structures of several aggregates have remained uncertain, and this fact has caused unnecessary confusion. In the present research, atomic structures of the aggregates have been analyzed by means of transmission electron diffraction and transmission electron microscopy. Since the atoms which constitute a covalent material have a strong tendency to form covalent bonds even in a defect region, it is expected that the atomic structure of aggregates has a kind of order. This is the reason of the advantage of transmission electron diffraction and electron microscopic techniques, which are very convenient means to analyze small particles of a periodic structure which are embedded in the matrix crystal. The results of our analysis are summarized as follows.1 … More . Defect on {113} in Si and GeA proposed atomic model shows that interstitial Si atoms aggregate on {113} and form a reconstructed structure in the interior of a Si crystal. The model is characterized by 5-6-7-and 8-membered atomic rings and has no dangling bond in the {110} projection. The 6-membered rings constitute tiny rods of the hexagonal structure, and the 8-membered rings are related to the {113} surface structure. It has been confirmed based on an energy calculation that the energy per self interstitial atom in the reconstructed structure is distinctively smaller than that estimated for an isolated interstitial atom.2. Planar defects in a Si-doped GaAs crystalSmall precipitates of triangular shape are observed in a Si-doped GaAs crystal. Transmission electron microscopic study has indicated that the two {111} crystallographic net planes of Si are inserted between the two existing {111} net planes in a GaAs crystal.Furthermore, we have proposed a new atomic model for a hydrogen-induced platelet in Si based on the precise analysis of high-resolution electron microscopic images.In conclusion, the crystallographic techniques such as electron diffraction and microscopy are very useful in analyzing atomic structures of point-defect-aggregates in semiconducting materials. Less

介绍了半导体材料在晶体生长、热处理、电子辐照和离子注入过程中产生的点缺陷。众所周知，它们提供了相当大的机会在高温下聚集。几个聚集体的原子结构仍然不确定，这一事实造成了不必要的混乱。在本研究中，利用透射电子衍射和透射电子显微镜对聚集体的原子结构进行了分析。由于构成共价材料的原子即使在缺陷区也有很强的形成共价键的倾向，因此可以预期聚集体的原子结构具有一种有序性。这就是透射式电子衍射和电子显微镜技术的优势所在，它们是分析镶嵌在基质晶体中的周期性结构小颗粒的非常方便的手段。我们的分析结果总结如下。1…更多。Si中{113}上的缺陷和GEA提出的原子模型表明，间隙Si原子聚集在{113}上，并在Si晶体内部形成重构结构。该模型以5-6-7-8元原子环为特征，在{110}投影中没有悬垂键。6元环构成了六方结构的细棒，8元环与{113}表面结构有关。基于能量计算证实，重构结构中每个自间隙原子的能量明显小于孤立间隙原子的估算能量。掺硅的砷化镓晶体中的平面缺陷在掺硅的砷化镓晶体中观察到少量三角形的析出物。透射电子显微镜研究表明，在GaAs晶体中，Si的两个{111}晶面被插入到现有的两个{111}网面之间。此外，我们在对高分辨率电子显微镜图像进行精确分析的基础上，提出了一个新的硅氢诱导片层的原子模型。综上所述，电子衍射和显微镜等结晶学技术对于分析半导体材料中点缺陷聚集体的原子结构是非常有用的。较少

项目成果

S. Takeda: "Interior-Lattice-Reconstruction in a Si Crystal: Atomic Structure of the {113}Planar Defect in Si (in Japanese)" Bulletin of the Japanese Crystallographic Society. 33. 333-338 (1991)

S. Takeda：“Si 晶体中的内部晶格重建：Si 中 {113} 平面缺陷的原子结构（日语）”日本晶体学会通报。

S.TAKEDA,S.MUTO and M.HIRATA: "Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge" Materials Science Forum. 83-87. 309-314 (1992)

S.TAKEDA、S.MUTO 和 M.HIRATA：“电子辐照硅和锗中间隙缺陷的原子结构”材料科学论坛。

S. Takeda, S. Muto and M. Hirata: "Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge" Materials Science Forum. 83-87. 309-314 (1992)

S. Takeda、S. Muto 和 M. Hirata：“电子辐照硅和锗中间隙缺陷的原子结构”材料科学论坛。

S. Muto, S. Takeda, M. Hirata and T. Tanabe: "Structure of Hydrogen-Induced Planar Defect in Silicon by High-Resolution Electron Microscopy" J. Appl. Phys. 70. 3505-3508 (1991)

S. Muto、S. Takeda、M. Hirata 和 T. Tanabe：“通过高分辨率电子显微镜观察硅中氢致平面缺陷的结构” J. Appl。

M. Koyama and S. Takeda: "Atomic structure and energy of the {113} planar interstitial defects in Si" Phys. Rev. B46. 12305-12315 (1992)

M. Koyama 和 S. Takeda：“Si 中 {113} 平面间隙缺陷的原子结构和能量”Phys。