Fundamental study of nanofabrication by electron irradiation

电子辐照纳米加工的基础研究

• 批准号: 15201026
• 负责人: TAKEDA Seiji
• 金额: $ 31.7万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15201026/
• 关键词: electron irradiation; silicon; nanofabrication; gold; metal nanoparticle; silicon nanowire; self-organization; 電子照射; 透過電子顕微鏡; 表面; 金属ナノ; 粒子触媒; ナノワイヤー; 電子励起; ナノ触媒; ナノファビリケーシ; 半導体; 吸着原子; 表面テンプレート

We have studied electron irradiation effects in semiconductor crystals by means of electron microscopy and associated experimental techniques. In addition to structural studies on electron-irradiation-induced defects in silicon, we have examined silicon surface nanoholes, which are introduced on a clean silicon surface by electron irradiation. We have experimentally determined the dependence of diameters, spatial distribution and excavating rate of silicon surface nanoholes on electron irradiation condition. This detailed date can be used for application of silicon surface nonoholes. Furthermore, we have found that gold nanoparticles of certain size can be formed on electron-irradiated silicon surface. The experimental procedure is as follows ; 1) preparation of a clean silicon surface, 2) irradiation of electron beam of the surface, 3) deposition of gold homogeneously on the surface, and 4) annealing the surface at elevated temperatures. Al the processes are carried out in ultra vacuu … More m environment. As a result, gold nanoparticles are formed selectively on either the center or the periphery of the irradiated areas at the certain experimental condition. We have analyzed this peculiar phenomenon based on a simple model. We assume that electron irradiation induces atomistic roughness on surface according to the intensity profile of electron beam. This roughness, introduced heterogeneously on the surface, affects the surface diffusion of adatoms, i.e. deposited gold atoms. Extending a basic theory of surface diffusion and clustering of adatoms to that on the heterogeneously roughened surface, we have explained qualitatively our experimental result. Furthermore, having known that the size of the selectively grown gold nanoparticles on electron irradiated areas are commensurate to that as catalysts for growing silicon nanowires, we have actually succeeded in growing silicon nanowires from the selectively grown gold particle via vapor liquid solid (VLS) mechanism using silane as source gas. The experimental results summarized above will be utilized for nanofabrication of semiconductor crystals by electron irradiation. Less

我们通过电子显微镜和相关实验技术研究了半导体晶体中的电子辐照效应。除了对硅中电子辐照引起的缺陷的结构研究之外，我们还检查了硅表面纳米孔，这些纳米孔是通过电子辐照在干净的硅表面上引入的。我们通过实验确定了硅表面纳米孔的直径、空间分布和挖掘速率对电子辐照条件的依赖性。该详细数据可用于硅表面纳米孔的应用。此外，我们发现电子辐照的硅表面可以形成一定尺寸的金纳米颗粒。实验流程如下； 1) 准备干净的硅表面，2) 电子束照射表面，3) 在表面上均匀沉积金，4) 在高温下对表面进行退火。所有过程均在超真空环境中进行。结果，在一定的实验条件下，金纳米粒子选择性地形成在照射区域的中心或外围。我们基于一个简单的模型分析了这种奇特的现象。根据电子束的强度分布，我们假设电子辐照在表面上引起原子粗糙度。这种在表面上不均匀引入的粗糙度会影响吸附原子（即沉积的金原子）的表面扩散。将表面扩散和吸附原子聚集的基本理论扩展到非均匀粗糙表面上，我们定性地解释了我们的实验结果。此外，已知电子照射区域上选择性生长的金纳米粒子的尺寸与作为生长硅纳米线的催化剂的尺寸相当，我们实际上已经成功地使用硅烷作为源气体，通过气液固（VLS）机制从选择性生长的金粒子生长硅纳米线。上述总结的实验结果将用于通过电子辐照进行半导体晶体的纳米制造。较少的

项目成果

Diffusion and condensation of adatoms on inhomogeneous rough surfaces

不均匀粗糙表面上吸附原子的扩散和凝聚

• 期刊: Surf. Sci. (印刷中)
• 作者: K.Torigoe;Y.Ohno;H.Kohno;T.Ichihashi;S.Takeda
• 通讯作者: S.Takeda

Growth process of gold nanoparticles on rough Si surfaces

金纳米粒子在粗糙硅表面的生长过程

• 发表时间: 2006
• 期刊: Physica B (印刷中)
• 作者: K.Torigoe;Y.Ohno;T.Ichihhashi;S.Takeda
• 通讯作者: S.Takeda

Extended vacancy-type defects in silicon induced at low temperatures by electron irradiation

低温下电子辐照引起的硅中扩展的空位型缺陷

• 发表时间: 2003
• 期刊: Philos. Mag. A 83
• 作者: J.Yamasaki;S.Takeda;Y.Ohno;Y.Kimura
• 通讯作者: Y.Kimura

Growth of silicon nanowires on H-terminated Si {111} surface templates studied by transmission electron microscopy

通过透射电子显微镜研究硅纳米线在 H 封端 Si {111} 表面模板上的生长

• 发表时间: 2005
• 期刊: Journal of Electron Microscopy 54 supplement(印刷中)
• 作者: N.Ozaki;Y.Ohno;J.Kikkawa;S.Takeda
• 通讯作者: S.Takeda

Core-shell SiGe whiskers with composition gradient along the axial direction : cross-sectional analysis

沿轴向具有成分梯度的核壳 SiGe 晶须：横截面分析

• 发表时间: 2005
• 期刊: Appl.Phys.Lett. 87
• 作者: K.Mori;K.Shoda;H.Kohno
• 通讯作者: H.Kohno