Fundamental Research on Ionized Cluster Beam Processes

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We have been doing Joint Research with AT & T Bell Laboratories, New Jersey Institute of Technology, and University of Ryode Island for Fundamental Research on Ionized Cluster Beam (ICB) Processes by Grant under The Monbusho International Scientific Research Program. The investigations of ICB processes by these groups could provide important and useful results to each group.The experimental results obtained during the research term;namely (1) atomic-scale observations by Scanning Tunneling Microscopy (STM) of the early stages of film growth, and (2) recent studies of the detailed composition of beams from ICB sources, have led to a new understanding of the origins of the extraordinary properties of thin films deposited by ICB methods. The presence of a small fraction of atoms is the form large clusters initiates a novel sequence of film growth steps staring with the immediate formation of stable islands for film growth.In addition, a gas cluster ion source was newly developed and clusters with the size range of several hundreds to thousands of molecules were generated with this apparatus. For impacts with large clusters, We observed unique properties of the materials modified by the implantation, sputtering, and cleaning processes. These results can be applied to the development of new technologies for surface treatment.