Study on development of cluster ion implantation system for LSI

LSI用簇离子注入系统的研制研究

• 批准号: 04555003
• 负责人: YAMADA Isao
• 金额: $ 9.15万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-04555003/
• 关键词: gas cluster; high density irradiation effect; low energy ion beam; lateral sputtering; ion implantation; surface cleaning; film formation; LSI; イオンビーム; クラスターイオン; ラテラルスパッタ効果; 多体衝突効果; クラスターイオン注入; クラスターイオンビーム技術; ラバルノズル; フリージェットノズル; スパッタ; 高密度

We have developed gas cluster ion implantation apparatus, which has a high potential for (a) shallow implantaiton, (b) very flat surface formation, (c) low damage surface cleaning, (d) high rate sputtering and (e) formation of better quality thin film.The effects of energetic Ar and CO_2 cluster on solid surfaces have been studied for different energies and sizes of cluster. The damaged layr by cluster ion irradiation was very small in comparison with the monomer ion irradiation, which is due to comparatively low energy of constituent atom of the cluster. In addition, the sputtering yield from metal, semiconductor and insulator films, using gas cluster ion, was larger by a few tens to hundreds times than that for the case of monomer ion because of the effect of high energy density irradiation. A very flat surface was obtained after irradiation of gas cluster, which indicates lateral sputtering at the surface.It was also possible to achieve the shallow implantation by adjusting the energy and size of cluster ion.Furthermore, computer simulation showed that when energetic cluster hit a solid surface, multiple collisions between cluster constituent atoms occurred and many unusual effects were observed.

我们研制了气体团簇离子注入装置，它具有（a）浅溅射，（B）形成非常平坦的表面，（c）低损伤的表面清洗，（d）高速溅射和（e）形成质量较好的薄膜的高潜力。与单体离子辐照相比，团簇离子辐照的损伤层非常小，这是由于团簇中组成原子的能量相对较低。此外，由于高能量密度辐照的影响，用气体团簇离子溅射金属、半导体和绝缘体薄膜的溅射产额比用单体离子溅射的大几十到几百倍。结果表明，气体团簇辐照后表面非常平整，说明表面发生了侧向溅射，通过调节团簇离子的能量和尺寸，可以实现浅注入，同时，计算机模拟表明，高能团簇撞击固体表面时，团簇组成原子之间发生了多次碰撞，观察到了许多异常现象.

项目成果

Z.Insepov: "Molecular Dynamics Simulation of the Effects of Energetic Cluster Ion Impact on Solid Surface" Materials Reserch Society Symposium Proceedings. 316. 999-1004 (1994)

Z.Insepov：“高能簇离子撞击固体表面影响的分子动力学模拟”材料研究学会研讨会论文集。

I.Yamada: "Irradiation Effects of Gas-Cluster Ar Ion Beams on Solid Surfaces" Proceeding of Advanced Materials 93 IV/Laser and Ion Beam Modification of Materials. 17. 119-122 (1994)

I.Yamada：“气体团簇 Ar 离子束对固体表面的辐照效应”先进材料 93 IV/材料的激光和离子束改性论文集。

P.R.Besser: "Mechanical Behavior of Single Crystal Al(111) and Bicrystal Al(110) Films on Silicon Substrates" Materials Research Society Symposium Proceedings. 343. 659-664 (1994)

P.R.Besser：“硅衬底上单晶 Al(111) 和双晶 Al(110) 薄膜的机械行为”材料研究学会研讨会论文集。

I.Yamada: "Gas Cluster Ion Beam Equipment" Abstracts of International Conference on Ion Implantation Technology '94. (1994)

I.Yamada：“气体团簇离子束设备”国际离子注入技术会议94摘要。

T.Yamaguchi: "Sputtering Effects of Gas Cluster Ion Beams on Solid Surfaces" Proceedings of 13th International Conference on the Application of Accelerators in Research & Industry. (1995)

T.Yamaguchi：“气体团簇离子束对固体表面的溅射效应”第13届加速器研究应用国际会议论文集