Study on development of cluster ion implantation system for LSI

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We have developed gas cluster ion implantation apparatus, which has a high potential for (a) shallow implantaiton, (b) very flat surface formation, (c) low damage surface cleaning, (d) high rate sputtering and (e) formation of better quality thin film.The effects of energetic Ar and CO_2 cluster on solid surfaces have been studied for different energies and sizes of cluster. The damaged layr by cluster ion irradiation was very small in comparison with the monomer ion irradiation, which is due to comparatively low energy of constituent atom of the cluster. In addition, the sputtering yield from metal, semiconductor and insulator films, using gas cluster ion, was larger by a few tens to hundreds times than that for the case of monomer ion because of the effect of high energy density irradiation. A very flat surface was obtained after irradiation of gas cluster, which indicates lateral sputtering at the surface.It was also possible to achieve the shallow implantation by adjusting the energy and size of cluster ion.Furthermore, computer simulation showed that when energetic cluster hit a solid surface, multiple collisions between cluster constituent atoms occurred and many unusual effects were observed.