Development of high resolution TRAXS and its applications to surface science
Development of high resolution TRAXS and its applications to surface science
批准号:
03554007
负责人:
HASEGAWA Shuji
金额:
$5.76万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1991
资助国家:
日本
项目状态:
已结题
起止时间:
1991 至 1992
中文摘要
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英文摘要
The aim of this project is to improve a "RHEED-TRAXS" method, our original technique for surface analysis, and to develop a "high resolution TRAXS". The achievements in this project term are as follows;1. For the high resolution RHEED-TRAXS (reflection-high-energy electron diffraction--total-reflection-angle-X-ray spectroscopy), we developed an X-ray spectrometer which consisted of a crystal spectrometer and a position-sensitive X-ray detector. Combining it with our RHEED-MBE(molecular beam epitaxy) apparatus, we obtained high-resolution X-ray energy spectra which had intensities enough for observations of dynamical processes with short data-aquisition time.2. Using a flat LiF(200) crystals as a spectrometer, we confirmed an energy resolution of about 13eV at GaK lines (9.2keV), which was about ten times higher than that (150eV) of the previous TRAXS method. Then, we expect to carry out EXAFS (extended X-ray absorption fine structures) with this high energy resolution.3. With use of a Si surface, of which atomic structures and chemical compositions were well characterized with this new technique, we measured the surface conductance, and found it to be sensitively influenced by the atomic-scale structures of the surface. The changes in atomic arrangements on the surface lead to changes of surface electronic states and space-charge layer, resulting in changes in the macroscopic electrical properties such as surface conductance. This findings will be important not only from the fundamental interests, but also from their devise applications.
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長谷川 修司: "Correlation between atomic-scale structures and macroscopic electrical properties of metal-covered Si(111)surfaces" International Journal of Modern Physics B(招待論文). (1993)
Shuji Hasekawa:“原子尺度结构与金属覆盖的 Si(111) 表面的宏观电学特性之间的相关性”《国际现代物理学杂志 B》(特邀论文)。
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長谷川 修司: "Surface structures and conductance at epitaxial growths of Ag and Au on the Si(III) surface" Physical Review Letters. 68. 1192-1195 (1992)
Shuji Hasekawa:“Si(III) 表面上 Ag 和 Au 外延生长的表面结构和电导”《物理评论快报》68。1192-1195 (1992)。
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S.Hasegawa and S.Ino: "Surface structures and conductance at epitaxial growths of Ag and Au on the Si(111) surface" Physical Review Letters. 168. 1192-1195 (1992)
S.Hasekawa 和 S.Ino:“Si(111) 表面上 Ag 和 Au 外延生长的表面结构和电导”物理评论快报。
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長谷川 修司: "Surface structures and conductance at initial stages in epitaxy of metals on a Si(III) surface" Surface Science. 283. (1993)
Shuji Hasekawa:“Si(III) 表面上金属外延初始阶段的表面结构和电导”表面科学 283。(1993)
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長谷川 修司: "Hysteresis in phase transitions at clean and Au-covered Si(III) surfaces" Physical Review B. 47. (1993)
Shuji Hasekawa:“清洁和金覆盖的 Si(III) 表面相变的滞后”物理评论 B. 47。 (1993)
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共 7 条
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财政年份:2007
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Development of Green's Function STM and Application to Study of Nano Electronic Transport Dynamics
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财政年份:2003
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负责人:HASEGAWA Shuji
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依托单位:
Study on local surface electrical conduction by scanning microscopic four-point probes in ultrahigh vacuum
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批准号:13305004
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项目类别:Grant-in-Aid for Scientific Research (A)
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财政年份:2001
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Development of a four-tip scanning tunneling microscope and study on surface electrical conduction at mamometer scales
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批准号:12355003
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财政年份:2000
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负责人:HASEGAWA Shuji
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依托单位:
SURFACE ELECTRONIC TRANSPORT
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批准号:11694059
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$3.2万
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财政年份:1999
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负责人:HASEGAWA Shuji
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依托单位:
Electronic transport properties of surface-state bands on semiconductors
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资助金额:$2.56万
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财政年份:1998
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负责人:HASEGAWA Shuji
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依托单位:
Development of scanning TRAXS and its application to studies of surface dynamics
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批准号:10555007
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.83万
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财政年份:1998
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负责人:HASEGAWA Shuji
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依托单位:
Atomic-scale structure control of silicon-metal interface and its macroscopic functional properties
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批准号:05452101
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资助金额:$4.8万
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财政年份:1993
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依托单位:
Molecular bases of sympathetic innervation and developmental changes in ion channels
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批准号:62430025
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财政年份:1987
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依托单位:
Developmental changes in different types of ion channels of mammalian skeletal muscle. - Tight-seal whole-cell clamp study-
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财政年份:1986
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负责人:HASEGAWA Shuji
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依托单位:
海外基金