Study on local surface electrical conduction by scanning microscopic four-point probes in ultrahigh vacuum
超高真空中显微四点探针扫描局部表面电导研究
基本信息
- 批准号:13305004
- 负责人:
- 金额:$ 25.04万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2001
- 资助国家:日本
- 起止时间:2001 至 2003
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We have developed a ultrahigh-vacuum system for electrical conductivity measurements with high surface sensitivity by using monolithic micro-four-point probe method (probe spacing being 4〜40μm) at temperatures ranging from 10 K to room temperature, combined with simultaneous structure analysis by reflection-high-energy electron diffraction (RHEED). This apparatus enables direct measurements of electrical conductivity at the topmost atomic layers on crystal surfaces as a function of temperature. We have made several new findings with this apparatus.(1)A quasi-one-dimensional metallic surface, Si(111)-4×1-In, was found to show a metal-insulator transition around 120 K as revealed by a dramatic increase in resistance by cooling. This is consistent with a picture of Peierls transition accompanied with charge-density waves.(2)A two-dimensional metallic surface, Si(111)-√3×√3-Ag, was found to show a metal-insulator transition around 230 K as revealed by a dramatic increase in resistance by cooling. Combined with photoemission spectroscopy study, the low-temperature phase is not a band insulator. Weak localization may play a role.(3)A quasi-one-dimensional metallic surface, Si(557)-Au, was found to be semiconductive in terms of electrical conduction. This may be due to atomic defects which break up the metallic atomic chains into segments.
采用单片微型四探针法(探针间距为4 × 40μm),结合反射高能电子衍射(RHEED)结构分析,研制了一套超高真空系统,可在10 K ~室温范围内进行高表面灵敏度的电导率测量。该仪器能够直接测量晶体表面最顶层原子层的电导率随温度的变化。我们用这个仪器有了几个新的发现。(1)A准一维金属表面Si(111)-4 1-In在120 K附近出现了金属-绝缘体转变,冷却后电阻急剧增加。这与伴随着电荷密度波的佩尔斯跃迁的图像是一致的。(2)A二维金属表面Si(111)-Ag_(113)× Ag_(113)-Ag在230 K附近出现金属-绝缘体转变,冷却后电阻急剧增加。结合光电子能谱研究,低温相不是能带绝缘体。弱定位可能起作用。(3)A发现准一维金属表面Si(557)-Au在导电方面是非线性的。这可能是由于原子缺陷将金属原子链分解成片段。
项目成果
期刊论文数量(23)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S.S.Lee, J.R.Ahn, N.D.Kim, S.V.Ryjkov, S.Hasegawa, et al.: "Adsorbate-induced pinning pf a charge-density wave in a quasi-1D metallic chains : Na on the In/Si(111)-(4x1) surface"Physical Review Letters. 88. 196401-1-196401-4 (2002)
S.S.Lee、J.R.Ahn、N.D.Kim、S.V.Ryjkov、S.Hasekawa 等人:“准一维金属链中吸附物诱导的电荷密度波钉扎:Na 在 In/Si(111)-(
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S.Hasegawa, I.Shiraki, T.Tanikawa, C.L.Petersen, et al.: "Direct measurement of surface-state conductance by microscopic four-point probe method"Journal of Physics : Condensed Matter. 14. 8379-8392 (2002)
S.Hasekawa、I.Shiraki、T.Tanikawa、C.L.Petersen 等人:“通过显微四点探针法直接测量表面态电导”物理学杂志:凝聚态物质。
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S.V.Ryjkov, T.Nagao, V.G.Lifshits, S.Hasegawa: "Phase transition and stability of Si(111)-8x'2'-In surface phase at low temperature"Surface Science. 488. 15-22 (2001)
S.V.Ryjkov、T.Nagao、V.G.Lifshits、S.Hasekawa:“低温下 Si(111)-8x2-In 表面相的相变和稳定性”表面科学。
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長谷川修司, 白木一郎, 田邊輔仁, 保原麗, 金川泰三, 谷川雄洋, 松田巌: "ミクロな4端子プローブによる表面電気伝導の測定"表面科学. 23. 740-752 (2002)
Shuji Hasekawa、Ichiro Shiraki、Sukehito Tanabe、Rei Yasuhara、Taizo Kanakawa、Yuhiro Tanikawa、Iwao Matsuda:“使用显微 4 端子探针测量表面电导率”表面科学 23. 740-752 (2002)。
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HASEGAWA Shuji其他文献
からくり玩具パタパタ(ヤコブの梯子)の力学模型
机械玩具Papatata(雅各布的梯子)的机械模型
- DOI:
- 发表时间:
2019 - 期刊:
- 影响因子:0
- 作者:
AKIYAMA Ryota;TAKASHIRO Takuya;KURODA Shinji;HASEGAWA Shuji;和田浩史 - 通讯作者:
和田浩史
Concerted Effects of Topological Insulators and Ferromagnetism
拓扑绝缘体和铁磁性的协同效应
- DOI:
10.1380/vss.66.28 - 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
AKIYAMA Ryota;TAKASHIRO Takuya;KURODA Shinji;HASEGAWA Shuji - 通讯作者:
HASEGAWA Shuji
HASEGAWA Shuji的其他文献
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{{ truncateString('HASEGAWA Shuji', 18)}}的其他基金
Development of English Teaching Materials for Elementary School Foreign Language Activities
小学外语活动英语教材的开发
- 批准号:
26370673 - 财政年份:2014
- 资助金额:
$ 25.04万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of Milli-Kelvin Micro-Four-Point Probe Method andResearch of Monolayer Superconductors
毫开尔文微四点探针法的发展及单层超导体的研究
- 批准号:
22246006 - 财政年份:2010
- 资助金额:
$ 25.04万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Diluted magnetic surface states on semiconductor crystals and its application to spintronics
半导体晶体的稀磁表面态及其在自旋电子学中的应用
- 批准号:
19206006 - 财政年份:2007
- 资助金额:
$ 25.04万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Development of Green's Function STM and Application to Study of Nano Electronic Transport Dynamics
格林函数STM的发展及其在纳米电子输运动力学研究中的应用
- 批准号:
15106001 - 财政年份:2003
- 资助金额:
$ 25.04万 - 项目类别:
Grant-in-Aid for Scientific Research (S)
Development of a four-tip scanning tunneling microscope and study on surface electrical conduction at mamometer scales
四端扫描隧道显微镜的研制及乳房计尺度的表面电导研究
- 批准号:
12355003 - 财政年份:2000
- 资助金额:
$ 25.04万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
SURFACE ELECTRONIC TRANSPORT
地面电子运输
- 批准号:
11694059 - 财政年份:1999
- 资助金额:
$ 25.04万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Electronic transport properties of surface-state bands on semiconductors
半导体表面态带的电子输运特性
- 批准号:
10650025 - 财政年份:1998
- 资助金额:
$ 25.04万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of scanning TRAXS and its application to studies of surface dynamics
扫描TRAXS的发展及其在表面动力学研究中的应用
- 批准号:
10555007 - 财政年份:1998
- 资助金额:
$ 25.04万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Atomic-scale structure control of silicon-metal interface and its macroscopic functional properties
硅-金属界面的原子尺度结构调控及其宏观功能特性
- 批准号:
05452101 - 财政年份:1993
- 资助金额:
$ 25.04万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Development of high resolution TRAXS and its applications to surface science
高分辨率 TRAXS 的开发及其在表面科学中的应用
- 批准号:
03554007 - 财政年份:1991
- 资助金额:
$ 25.04万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
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