Development of a four-tip scanning tunneling microscope and study on surface electrical conduction at mamometer scales
Development of a four-tip scanning tunneling microscope and study on surface electrical conduction at mamometer scales
批准号:
12355003
负责人:
HASEGAWA Shuji
金额:
$27.46万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2002
中文摘要
点击翻译按钮获取中文摘要
英文摘要
We have developed an independently driven four-tip scanning tunneling microscope in ultrahigh vacuum, which enables four-probe electrical conductivity measurements at nanometer scales.(1) We have measured the electrical resistance of Si(111)-7×7 clean and -√<3>×√<3>-Ag surfaces by changing the probe spacing from 1μm to 1mm. It has turned out that the surface sensitivity in resistance measurements greatly increases by reducing the probe spacing less than 10μm. From the probe-spacing dependence of the resistance, it is found that the 7×7 surface exhibits a three-dimensional electrical conduction, while the √<3>×√<3>-Ag surface has a two-dimensional character.(2) We have devised a 'square-four-point probe method' to detect the anisotropy in two-dimensional conductors, in which the four tips are arranged in square. With this method, we have measured the conductivity of a quasi-one-dimensional metallic surface, Si(111)-4×1-In, revealing that the anisotropy is as large as 70.(3) We have measured the conductance of single carbon nanotubes, by selecting and picking up them by two of the four tips. The results show an interesting feature of conductance.
期刊论文(56)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
I.Shiraki, F.Tanabe, R.Hobara, T.Nagao, S.Hasegawa: "Independently driven four-tip probes for conductivity measurements in ultrahigh vacuum"Surface Science. 493. 633-643 (2001)
I.Shiraki、F.Tanabe、R.Hobara、T.Nagao、S.Hasekawa:“用于超高真空电导率测量的独立驱动四尖探头”表面科学。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
H.Morikawa, I.Matsuda, S.Hasegawa: "STM observation of Si(111)-α-√<3>×√<3>-Sn at low temperature"Physical Review. B65. 201308R (2002)
H.Morikawa、I.Matsuda、S.Hasekawa:“低温下 Si(111)-α-√<3>×√<3>-Sn 的 STM 观察”物理评论 B65。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
G.Le Lay, A.Cricenti, C.Ottaviani, P.Perfetti, T.Tanikawa, I.Matsuda, S.Hasegawa: "Evidence of asymmetric dimers down 40 K at the clean Si(100) surface"Physical Review. B66. 153317 (2002)
G.Le Lay、A.Cricenti、C.Ottaviani、P.Perfetti、T.Tanikawa、I.Matsuda、S.Hasekawa:“干净的 Si(100) 表面上不对称二聚体下降 40 K 的证据”物理评论。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
S.V.Ryjkov, T.Nagao, V.G.Lifshits, S.Hasegawa: "Phase transition and stability of Si(111)-8×'2'-In surface phase at low temperatures"Surface Sci.. 488. 15-22 (2001)
S.V.Ryjkov、T.Nagao、V.G.Lifshits、S.Hasekawa:“低温下 Si(111)-8×2-In 表面相的相变和稳定性”Surface Sci.. 488. 15-22 (2001)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
I.Matstuda,H.W.Yeom,T.Tanikawa,T.Nagao,S.Hasegawa,: "Growth and electron quantization of the metastable silver films on Si (001)"Physical Review B. (印刷中).
I. Matstuda、H. W. Yeom、T. Tanikawa、T. Nagao、S. Hasekawa,:“Si (001) 上亚稳态银薄膜的生长和电子量子化”物理评论 B.(出版中)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 44 条
Development of English Teaching Materials for Elementary School Foreign Language Activities
-
批准号:26370673
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$3.0万
-
财政年份:2014
-
负责人:HASEGAWA Shuji
-
依托单位:
Development of Milli-Kelvin Micro-Four-Point Probe Method andResearch of Monolayer Superconductors
-
批准号:22246006
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$31.78万
-
财政年份:2010
-
负责人:HASEGAWA Shuji
-
依托单位:
Diluted magnetic surface states on semiconductor crystals and its application to spintronics
-
批准号:19206006
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$31.03万
-
财政年份:2007
-
负责人:HASEGAWA Shuji
-
依托单位:
Development of Green's Function STM and Application to Study of Nano Electronic Transport Dynamics
-
批准号:15106001
-
项目类别:Grant-in-Aid for Scientific Research (S)
-
资助金额:$67.06万
-
财政年份:2003
-
负责人:HASEGAWA Shuji
-
依托单位:
Study on local surface electrical conduction by scanning microscopic four-point probes in ultrahigh vacuum
-
批准号:13305004
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$25.04万
-
财政年份:2001
-
负责人:HASEGAWA Shuji
-
依托单位:
SURFACE ELECTRONIC TRANSPORT
-
批准号:11694059
-
项目类别:Grant-in-Aid for Scientific Research (B).
-
资助金额:$3.2万
-
财政年份:1999
-
负责人:HASEGAWA Shuji
-
依托单位:
Electronic transport properties of surface-state bands on semiconductors
-
批准号:10650025
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.56万
-
财政年份:1998
-
负责人:HASEGAWA Shuji
-
依托单位:
Development of scanning TRAXS and its application to studies of surface dynamics
-
批准号:10555007
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.83万
-
财政年份:1998
-
负责人:HASEGAWA Shuji
-
依托单位:
Atomic-scale structure control of silicon-metal interface and its macroscopic functional properties
-
批准号:05452101
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$4.8万
-
财政年份:1993
-
负责人:HASEGAWA Shuji
-
依托单位:
Development of high resolution TRAXS and its applications to surface science
-
批准号:03554007
-
项目类别:Grant-in-Aid for Developmental Scientific Research (B)
-
资助金额:$5.76万
-
财政年份:1991
-
负责人:HASEGAWA Shuji
-
依托单位:
Molecular bases of sympathetic innervation and developmental changes in ion channels
-
批准号:62430025
-
项目类别:Grant-in-Aid for General Scientific Research (A)
-
资助金额:$12.16万
-
财政年份:1987
-
负责人:HASEGAWA Shuji
-
依托单位:
Developmental changes in different types of ion channels of mammalian skeletal muscle. - Tight-seal whole-cell clamp study-
-
批准号:61570092
-
项目类别:Grant-in-Aid for General Scientific Research (C)
-
资助金额:$1.22万
-
财政年份:1986
-
负责人:HASEGAWA Shuji
-
依托单位: