Characterization of Defects in Semiconductors by Raman Spectroscopy in Low Frequency Region

低频区域拉曼光谱表征半导体缺陷

• 批准号: 03650015
• 负责人: NAKASHIMA Shin-ichi
• 金额: $ 1.47万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03650015/
• 关键词: Raman spectroscopy; Semiconductor; Crystal defect; Chracterization; Si; 低波数域測定; マルチチャネル検出器測定; SiCの積層不整; 酸化物高温超伝導体

The aim of this project is to detect crystal defects or imperfections by Raman measurements of semiconductors in low frequency region. For this purpose, we have compared following two spectroscopic systems by use of a multichannel detector.(1) A combination of a filtered spectrometer and double monochromator.(2) A combination of a holographic notch filter and a double monochromator.The first system can be applied to any wavelengths of an exciting laser, but the reflection loss of the filter spectrometer was very high. Hence this system could not be convenient for the detection of weak signals in lower frequency region.It was found that the loss of signals in the second system was low and that the Raman spectra could be measured in the region down to 60 cm^<-1>. When using a Raman microscope, Raman spectra were measured down to 100 cm^<-1>.Raman spectra of SiC crystals having stacking faults were measured by the second system and analyzed.

该项目的目的是通过低频区域半导体的拉曼测量来检测晶体缺陷或缺陷。为此，我们使用多通道探测器对以下两种光谱系统进行了比较。（1）滤波光谱仪和双单色仪的组合。（2）全息陷波滤波器和双单色仪的组合。第一个系统可以应用于任何波长的激发激光，但滤波光谱仪的反射损耗非常高。因此该系统不能方便地检测低频区域的微弱信号。结果发现，第二系统的信号损失较低，并且可以在低至60cm^-1的区域测量拉曼光谱。当使用拉曼显微镜时，测量低至100cm ^ -1 的拉曼光谱。通过第二系统测量并分析具有堆垛层错的SiC晶体的拉曼光谱。

项目成果

中島 信一: "Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques" Jpn.J.Appl.Phys.31. L1422-1424 (1992)

Shinichi Nakajima：“通过拉曼散射和光热波技术表征离子注入剂量”Jpn.J.Appl.Phys.31 (1992)。

S. Nakashima, et al: "Structure Analysis of Semiconductor Surfaces and Films by Raman Scattering Technique" In. J. Engng. Sci. 29. 381-389 (1991)

S. Nakashima 等人：“通过拉曼散射技术对半导体表面和薄膜进行结构分析”。

S.Nakashima,M.Hangyo: "Raman Intensity Profiles and the Stacking Structure in SiC Polytypes" Solid State Communication. 80. 21-24 (1991)

S.Nakashima，M.Hangyo：“SiC 多型体中的拉曼强度分布和堆叠结构”固态通信。

S.Nakashima,K.Mizoguchi: "Structure Analysis of Semiconductor Surfaces and Films by Raman Scattering Technique" International Journal of Engineering Science. 29. 381-389 (1991)

S.Nakashima，K.Mizoguchi：“通过拉曼散射技术对半导体表面和薄膜进行结构分析”国际工程科学杂志。

萩行 正憲: "Raman Spectra of GaAs/AlAs Superlattices with Fluctuation of Period under Off-and Near-Resonant Conditions" Surface Science. 267. 426-429 (1992)

Masanori Hagiyuki：“关闭和近共振条件下具有周期波动的 GaAs/AlAs 超晶格的拉曼光谱”表面科学 267. 426-429 (1992)