Trial Production of 2-Dimentional Optical-Optical Ultra-High Speed Functional Device

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We summarized here our efforts for the development of the optical-optical ultra-high speed functional device in this scientific research. Different mechanisms have been proposed for the hotodetection capability of planar FET(Field Effect Transistor) structures. Horetofore, using a HEMT(High Electron Mobility Transistor) structure we could get 18ps(FWHM) response at room temperature and 13ps(FWHM) response at 126K.For these response measurements a correlation technique with using two cascade-connented devices was used. These results show the effective contribution of the 2-D electron gas in the HEMT structure, and at the same time, this proves the effectiveness of the photodetection mechanism we proposed.Since the advent of the idea of OEIC(Opto-Electronic IC), for the photodetectors, high speed as well as high photoresponsivity are required. To achieved a high photoresponsivity, we tried to use a double-heterojunction HEMT(DH-HEMT) as a photodetectorThe possibility of field distribution manipulation by the wave front variation caused by the nonlinear refractive index change has been investigated. The process of field redistribution was computed by a multi-segment successive scheme. As a result, it has been shown that with a simple and compact configuration using a negative nonlinear optical material field redistribution was achievable.In summary, we tried production of 2-dimentional optical-optical ultra-high speed functional device. We obtained the photoresponce of opto-electronic devices, though we didn't obtain the photoresponce of optical-optical functional device. Futher, we was able to analyze it of the optical wave guides.