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Trial Production of 2-Dimentional Optical-Optical Ultra-High Speed Functional Device

二维光-光超高速功能器件的试制

基本信息

批准号：
04555086
负责人：
UMEDA Tokuo
金额：
$ 9.22万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1993
项目状态：
已结题

项目摘要

We summarized here our efforts for the development of the optical-optical ultra-high speed functional device in this scientific research. Different mechanisms have been proposed for the hotodetection capability of planar FET(Field Effect Transistor) structures. Horetofore, using a HEMT(High Electron Mobility Transistor) structure we could get 18ps(FWHM) response at room temperature and 13ps(FWHM) response at 126K.For these response measurements a correlation technique with using two cascade-connented devices was used. These results show the effective contribution of the 2-D electron gas in the HEMT structure, and at the same time, this proves the effectiveness of the photodetection mechanism we proposed.Since the advent of the idea of OEIC(Opto-Electronic IC), for the photodetectors, high speed as well as high photoresponsivity are required. To achieved a high photoresponsivity, we tried to use a double-heterojunction HEMT(DH-HEMT) as a photodetectorThe possibility of field distribution manipulation by the wave front variation caused by the nonlinear refractive index change has been investigated. The process of field redistribution was computed by a multi-segment successive scheme. As a result, it has been shown that with a simple and compact configuration using a negative nonlinear optical material field redistribution was achievable.In summary, we tried production of 2-dimentional optical-optical ultra-high speed functional device. We obtained the photoresponce of opto-electronic devices, though we didn't obtain the photoresponce of optical-optical functional device. Futher, we was able to analyze it of the optical wave guides.

本文总结了本科学研究中为开发光-光超高速功能器件所做的努力。对于平面场效应晶体管（FET）结构的热探测能力，人们提出了不同的机制。到目前为止，使用HEMT（高电子迁移率晶体管）结构，我们可以在室温下获得18ps（FWHM）响应，在126K下可以获得13ps（FWHM）响应。对于这些响应测量，使用了使用两个级联连接装置的相关技术。这些结果表明了二维电子气体在HEMT结构中的有效贡献，同时也证明了我们提出的光探测机制的有效性。自OEIC（光电集成电路）思想出现以来，对于光电探测器来说，需要高速度和高光响应性。为了获得高的光响应性，我们尝试使用双异质结HEMT（DH-HEMT）作为光电探测器，并研究了由非线性折射率变化引起的波前变化对场分布操纵的可能性。采用多段逐次方案计算场重分布过程。结果表明，在简单紧凑的结构下，使用负非线性光学材料可以实现场重分布。综上所述，我们尝试制作了二维光学-光学超高速功能器件。我们得到了光电器件的光响应，但没有得到光-光功能器件的光响应。进一步，我们能够对光波导进行分析。