Development of Preparation System of Nano-scale Vacuum Microdevices

纳米级真空微器件制备系统的研制

• 批准号: 05505001
• 负责人: OKUYAMA Fumio
• 金额: $ 20.74万
• 依托单位: Nagoya Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (A)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05505001/
• 关键词: vacuum microelectronics; field emission; sputtering; スパッタリング; 電界電子放射; 表面テクスチュアリング

The aim of this project is to construct a system for preparing nanoscale vacuum microdevices (FEAs). The system constructed consists of a UHV SEM,a main component of JAMP-7100 scanning Auger microprobe, and a high-speed ion gun, having the following features.1.It enables us to prepare metalic and semiconducting FEAs with any geometry.2.For any type of FEAs geometry, resistive heating, ion sputtering, geometrical determination and I-V characteristics measurement are allowed in-situ.3.The emitter position is controllable in an accuracy of 1 mum.The emission charcteristcs of metal, semiconductor and diamond FEAs were measured with the aid of this system, the results of which were well beyond our initial expectations. Also, this system is so original in design that we see no global rival. In quality, too, the system is sure to be No.1 in the world.In the final fiscal year, we tried to measure I-V characteristics of diamond FEAs, and found a surprising fact that electron emission is dramaticlly enhanced above 400ﾟC.This finding is far beyond the current knowledge on field electron emission from diamond, and thus may open a new application field of diamond FEAs.

本课题的目的是建立一个纳米级真空微器件的制备系统。该系统由超高压扫描电镜（JAMP-7100扫描俄歇微探针的主要部件）和高速离子枪组成，具有以下特点。它使我们能够制备任何几何形状的金属和半导体有限元分析。对于任何形状的有限元分析，电阻加热、离子溅射、几何测定和I-V特性测量都是允许的。发射极位置的控制精度为1 μ m。利用该系统对金属、半导体和金刚石三种FEAs的发射特性进行了测量，结果远远超出了我们的预期。此外，这个系统在设计上是如此的原创，我们没有看到全球竞争对手。在质量方面，该系统也肯定是世界第一。在最后一个财政年度，我们尝试测量金刚石FEAs的I-V特性，并发现一个令人惊讶的事实，即电子发射在400ºC以上显着增强。这一发现远远超出了目前对金刚石场电子发射的认识，为金刚石有限元分析开辟了一个新的应用领域。

项目成果

加藤・野津・藤本 奥山・種村: "structure and morphology of microprotrusions grown on Ar-sputtered InP" J.Vac.Sci.Technol.A13. 207-215 (1995)

Kato、Nozu、Fujimoto、Okuyama 和 Tanemura：“Ar 溅射 InP 上生长的微突起的结构和形态”J.Vac.Sci.Technol.A13 (1995)。

藤本、野津、奥山: "Geometry and structure of sputter-induced cones on nickel-seeded silicon" J.Appl.Phys.77(印刷中). (1995)

Fujimoto、Nozu 和 Okuyama：“镍籽晶硅上溅射诱导锥体的几何和结构”J.Appl.Phys.77（出版中）。

Y,Q.Zhang, Y.Fujimoto and F.Okuyama: "Unusual texturing of Ar-sputtered Inp surfaces associated with Ni-seeding" Nucl.Insteum.Methods. B101. 306-310 (1995)

Y、Q.Zhang、Y.Fujimoto 和 F.Okuyama：“与 Ni 晶种相关的 Ar 溅射 Inp 表面的异常纹理”Nucl.Insteum.Methods。

藤本・野津・奥山: "Geometry and structure of sputter-induced cones on nickel-seeded silicon" J.Appl.Phys.77. 2725-2734 (1995)

Fujimoto、Nozu 和 Okuyama：“镍籽晶硅上溅射诱导锥体的几何结构”J.Appl.Phys.77 2725-2734 (1995)。

J.Kato, M.Nozu, Y.Fujimoto and F.Okuyama: "Structure and morphology of microprotrusions grown on Ar-sputtered InP" J.Vac.Sci.Technol.A13. 207-215 (1995)

J.Kato、M.Nozu、Y.Fujimoto 和 F.Okuyama：“Ar 溅射 InP 上生长的微突起的结构和形态”J.Vac.Sci.Technol.A13。