Development of Preparation System of Nano-scale Vacuum Microdevices
Development of Preparation System of Nano-scale Vacuum Microdevices
批准号:
05505001
负责人:
OKUYAMA Fumio
金额:
$20.74万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (A)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1995
中文摘要
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英文摘要
The aim of this project is to construct a system for preparing nanoscale vacuum microdevices (FEAs). The system constructed consists of a UHV SEM,a main component of JAMP-7100 scanning Auger microprobe, and a high-speed ion gun, having the following features.1.It enables us to prepare metalic and semiconducting FEAs with any geometry.2.For any type of FEAs geometry, resistive heating, ion sputtering, geometrical determination and I-V characteristics measurement are allowed in-situ.3.The emitter position is controllable in an accuracy of 1 mum.The emission charcteristcs of metal, semiconductor and diamond FEAs were measured with the aid of this system, the results of which were well beyond our initial expectations. Also, this system is so original in design that we see no global rival. In quality, too, the system is sure to be No.1 in the world.In the final fiscal year, we tried to measure I-V characteristics of diamond FEAs, and found a surprising fact that electron emission is dramaticlly enhanced above 400゚C.This finding is far beyond the current knowledge on field electron emission from diamond, and thus may open a new application field of diamond FEAs.
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加藤・野津・藤本 奥山・種村: "structure and morphology of microprotrusions grown on Ar-sputtered InP" J.Vac.Sci.Technol.A13. 207-215 (1995)
Kato、Nozu、Fujimoto、Okuyama 和 Tanemura:“Ar 溅射 InP 上生长的微突起的结构和形态”J.Vac.Sci.Technol.A13 (1995)。
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藤本、野津、奥山: "Geometry and structure of sputter-induced cones on nickel-seeded silicon" J.Appl.Phys.77(印刷中). (1995)
Fujimoto、Nozu 和 Okuyama:“镍籽晶硅上溅射诱导锥体的几何和结构”J.Appl.Phys.77(出版中)。
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Y,Q.Zhang, Y.Fujimoto and F.Okuyama: "Unusual texturing of Ar-sputtered Inp surfaces associated with Ni-seeding" Nucl.Insteum.Methods. B101. 306-310 (1995)
Y、Q.Zhang、Y.Fujimoto 和 F.Okuyama:“与 Ni 晶种相关的 Ar 溅射 Inp 表面的异常纹理”Nucl.Insteum.Methods。
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藤本・野津・奥山: "Geometry and structure of sputter-induced cones on nickel-seeded silicon" J.Appl.Phys.77. 2725-2734 (1995)
Fujimoto、Nozu 和 Okuyama:“镍籽晶硅上溅射诱导锥体的几何结构”J.Appl.Phys.77 2725-2734 (1995)。
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作者:
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通讯作者:
J.Kato, M.Nozu, Y.Fujimoto and F.Okuyama: "Structure and morphology of microprotrusions grown on Ar-sputtered InP" J.Vac.Sci.Technol.A13. 207-215 (1995)
J.Kato、M.Nozu、Y.Fujimoto 和 F.Okuyama:“Ar 溅射 InP 上生长的微突起的结构和形态”J.Vac.Sci.Technol.A13。
DOI:
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共 12 条
Constructing a field-emission (FE) x-ray tube
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批准号:10450036
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$9.02万
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财政年份:1998
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负责人:OKUYAMA Fumio
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依托单位:
EVALUATION ON 3 DIMENSSIONAL IMAGE SYSTEM FROM VISUAL FUNCTION AND AUTONOMIC NERVOUS SYSTEM
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批准号:10450162
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$2.75万
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财政年份:1998
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负责人:OKUYAMA Fumio
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依托单位:
Constructing a field-emission (FE) x-ray tube
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批准号:08555017
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$6.4万
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财政年份:1996
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负责人:OKUYAMA Fumio
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依托单位:
EVALUATION ON 3 DIMENSSIONAL IMAGE SYSTEM FROM VISUAL FUNCTION
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批准号:08650479
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.34万
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财政年份:1996
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负责人:OKUYAMA Fumio
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依托单位:
Development of Deposition System of Size-Controlled Clusters
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批准号:04402020
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$10.11万
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财政年份:1992
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负责人:OKUYAMA Fumio
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依托单位:
海外基金