Development of Preparation System of Nano-scale Vacuum Microdevices
Development of Preparation System of Nano-scale Vacuum Microdevices
批准号:
05505001
负责人:
OKUYAMA Fumio
金额:
$20.74万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (A)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1995
中文摘要
本计画的目的是建立一套奈米真空微元件的制备系统。该系统由JAMP-7100扫描俄歇微探针的主要部件--超高真空扫描电镜和高速离子枪组成,具有以下特点:1.它使我们能够制备任何几何形状的金属和半导体FEAs; 2.对于任何类型的FEAs几何形状,电阻加热,离子溅射,3.发射极位置可控制在1 μ m的精度范围内,测量了金属,利用该系统对半导体和金刚石的场效应分析进行了测量,结果大大超出了我们的预期。此外,这个系统在设计上是如此原创,我们看不到任何全球竞争对手。在最后一个财政年度,我们尝试测量金刚石FEAs的I-V特性,发现了一个令人惊讶的事实,即电子发射在400 μ C以上急剧增强。这一发现远远超出了目前对金刚石场致电子发射的认识,因此可能开辟金刚石FEAs的新应用领域。
英文摘要
The aim of this project is to construct a system for preparing nanoscale vacuum microdevices (FEAs). The system constructed consists of a UHV SEM,a main component of JAMP-7100 scanning Auger microprobe, and a high-speed ion gun, having the following features.1.It enables us to prepare metalic and semiconducting FEAs with any geometry.2.For any type of FEAs geometry, resistive heating, ion sputtering, geometrical determination and I-V characteristics measurement are allowed in-situ.3.The emitter position is controllable in an accuracy of 1 mum.The emission charcteristcs of metal, semiconductor and diamond FEAs were measured with the aid of this system, the results of which were well beyond our initial expectations. Also, this system is so original in design that we see no global rival. In quality, too, the system is sure to be No.1 in the world.In the final fiscal year, we tried to measure I-V characteristics of diamond FEAs, and found a surprising fact that electron emission is dramaticlly enhanced above 400゚C.This finding is far beyond the current knowledge on field electron emission from diamond, and thus may open a new application field of diamond FEAs.
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加藤・野津・藤本 奥山・種村: "structure and morphology of microprotrusions grown on Ar-sputtered InP" J.Vac.Sci.Technol.A13. 207-215 (1995)
Kato、Nozu、Fujimoto、Okuyama 和 Tanemura:“Ar 溅射 InP 上生长的微突起的结构和形态”J.Vac.Sci.Technol.A13 (1995)。
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藤本、野津、奥山: "Geometry and structure of sputter-induced cones on nickel-seeded silicon" J.Appl.Phys.77(印刷中). (1995)
Fujimoto、Nozu 和 Okuyama:“镍籽晶硅上溅射诱导锥体的几何和结构”J.Appl.Phys.77(出版中)。
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Y,Q.Zhang, Y.Fujimoto and F.Okuyama: "Unusual texturing of Ar-sputtered Inp surfaces associated with Ni-seeding" Nucl.Insteum.Methods. B101. 306-310 (1995)
Y、Q.Zhang、Y.Fujimoto 和 F.Okuyama:“与 Ni 晶种相关的 Ar 溅射 Inp 表面的异常纹理”Nucl.Insteum.Methods。
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藤本・野津・奥山: "Geometry and structure of sputter-induced cones on nickel-seeded silicon" J.Appl.Phys.77. 2725-2734 (1995)
Fujimoto、Nozu 和 Okuyama:“镍籽晶硅上溅射诱导锥体的几何结构”J.Appl.Phys.77 2725-2734 (1995)。
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通讯作者:
J.Kato, M.Nozu, Y.Fujimoto and F.Okuyama: "Structure and morphology of microprotrusions grown on Ar-sputtered InP" J.Vac.Sci.Technol.A13. 207-215 (1995)
J.Kato、M.Nozu、Y.Fujimoto 和 F.Okuyama:“Ar 溅射 InP 上生长的微突起的结构和形态”J.Vac.Sci.Technol.A13。
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共 12 条
Constructing a field-emission (FE) x-ray tube
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批准号:10450036
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$9.02万
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财政年份:1998
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负责人:OKUYAMA Fumio
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依托单位:
EVALUATION ON 3 DIMENSSIONAL IMAGE SYSTEM FROM VISUAL FUNCTION AND AUTONOMIC NERVOUS SYSTEM
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批准号:10450162
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$2.75万
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财政年份:1998
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负责人:OKUYAMA Fumio
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依托单位:
Constructing a field-emission (FE) x-ray tube
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批准号:08555017
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$6.4万
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财政年份:1996
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负责人:OKUYAMA Fumio
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依托单位:
EVALUATION ON 3 DIMENSSIONAL IMAGE SYSTEM FROM VISUAL FUNCTION
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批准号:08650479
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.34万
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财政年份:1996
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负责人:OKUYAMA Fumio
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依托单位:
Development of Deposition System of Size-Controlled Clusters
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批准号:04402020
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$10.11万
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财政年份:1992
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负责人:OKUYAMA Fumio
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依托单位:
海外基金