Dotierung von Indiumsulfid und Indiumoxid mit Lithium

我们建议研究Li掺杂在化合物In_2S_3和In_2O_3中的作用。掺锂的In2S3作为二次锂电池的电极材料具有重要的应用价值。另一方面，In_2O_3掺杂TiN(ITO)是最重要的光学透明导电薄膜。我们想要调查Lidoped In_2O_3和In_2S_3是否具有相似的有趣的材料性质。第一个中心的兴趣是确定锂的最大掺入量和注入的外来原子的原子位置(S)，例如，可以大量地插入尖晶石-In2S3中。为了确定微观结构，我们将应用微扰角关联(PAC)技术。当使用放射性111In探针时，这两种化合物都是这项技术的理想材料，111In探针将位于它们的“天然”阳离子晶格位置。放射性111In探针和稳定的7Li掺杂将在Göttingen的500千伏离子注入机上进行。此外，我们还想用~8Li的a发射沟道的方法来追踪Li原子。必要的核反应7Li(d，p)8Li可以用我所新安装的Pelletron加速器进行。

We propose to investigate the role of Li-doping in the two In compounds In2S3 and In2O3. Li-doped In2S3 is of interest as electrode in rechargeable Li-batteries. In2O3 doped with tin (ITO), on the other hand, is the most important optical transparent, conductive film. We want to investigate whether Lidoped In2O3 and In2S3 have similarly interesting materials properties. The first central interest is to determine the maximum amount of incorporated Li and the atomic position(s) of the implanted foreign atom Li which can, for example, be intercalated with high amounts into the spinel ß-In2S3. To determine the microscopic structure we will apply the technique of perturbed angular correlations (PAC). Both compounds are ideal materials for this technique when using radioactive 111In probes, which will be located at their "natural" cation lattice sites. Implantation of the radioactive 111In probes and of stable 7Li for doping will be done at the 500 kV IONAS implanter at Göttingen. In addition we want to trace the Li-atoms by the method of a-emission channeling of 8Li. The necessary nuclear reaction 7Li(d,p)8Li can be done with the newly installed Pelletron accelerator of our institute.