Dotierung von Indiumsulfid und Indiumoxid mit Lithium

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We propose to investigate the role of Li-doping in the two In compounds In2S3 and In2O3. Li-doped In2S3 is of interest as electrode in rechargeable Li-batteries. In2O3 doped with tin (ITO), on the other hand, is the most important optical transparent, conductive film. We want to investigate whether Lidoped In2O3 and In2S3 have similarly interesting materials properties. The first central interest is to determine the maximum amount of incorporated Li and the atomic position(s) of the implanted foreign atom Li which can, for example, be intercalated with high amounts into the spinel ß-In2S3. To determine the microscopic structure we will apply the technique of perturbed angular correlations (PAC). Both compounds are ideal materials for this technique when using radioactive 111In probes, which will be located at their "natural" cation lattice sites. Implantation of the radioactive 111In probes and of stable 7Li for doping will be done at the 500 kV IONAS implanter at Göttingen. In addition we want to trace the Li-atoms by the method of a-emission channeling of 8Li. The necessary nuclear reaction 7Li(d,p)8Li can be done with the newly installed Pelletron accelerator of our institute.