Development of medium energy ion scattering spectroscopy using time of flight method and its application to semiconductor process evaluation

飞行时间法中能离子散射光谱的发展及其在半导体工艺评估中的应用

• 批准号: 06555096
• 负责人: YOKOYAMA Shin
• 金额: $ 7.49万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555096/
• 关键词: medium energy ion scattering; ion implanter; time of flight measurement; surface damage; impurity profile; semiconductor detector; plasma-induced damage; spectra simulation; アルゴンプラズマ; コンタクトホール; アンチモンイオン注入

The purpose of this study is to develop a medium energy ion scattering (MEIS) measurement machine which analyzes a semiconductor surface damage and depth profile of the impurity in the semiconductors.In the 1994 fiscal year, we investigated a palsma induced damage on the semiconductor surfaces by means of semiconductor solid state detector (SSD) for measuring the number and the energy of the scattered ions. A new method to analyze a impurity profile by comparing the experimental and the simulated MEIS spectra was developed.In the 1995 fiscal year, the time of flight (TOF) type ion detector was designed and the performance was simulated. Also the MEIS spectra simulator was improved for the multi-layred structures.In the 1996 fiscal year, the TOF measurement system was assembled and its performance was checked. The two problems of this system became clear. (1) The low chopped beam current. The reason of this was the deflection of the beam axis when the chopping bias (3kV) was applied to … More one of the deflection electrodes (another electrode was grounded). (2) The scattered ions with low energies less than 30 keV were not detectable by the SSD detector due to the electronic noise. In order to improve these problems the following system modifications were carried out. (1) The deflection voltage was applied by two voltage sources (1.5 kV each, opposite direction) connected to each deflection electode. By using this configuration the deflection of the beam axis was suppressed. (2) Multi-channel plate (MCP) detector, which detects the low energy ions (2-50keV) with low electronic noise, was used instread of SSD detector.In the 1997 fiscal year, the ion scattering method was applied to the evaluation of the silicidation reaction of titanium silicides. As a result, it was found that the impurity atoms (Sb) in the Si substrate precipitate at the interface between Si/Ti silicide and Ti silicide/Ti nitiride which act as the passivation layr of the silicide from the oxidation during high tempertaure annealing. Less

本研究的目的是发展一种中能离子散射（MEIS）测量机，用于分析半导体表面损伤和半导体中杂质的深度分布，在1994财政年度，我们利用半导体固态探测器（SSD）测量散射离子的数目和能量，研究了半导体表面的脉冲损伤。提出了一种通过比较实验和模拟MEIS谱来分析杂质分布的新方法，并在1995财政年度设计了飞行时间（TOF）型离子探测器，进行了性能模拟。在1996财政年度，组装了飞行时间测量系统，并对其性能进行了检验。这个系统的两个问题变得很明显。(1)低斩波束流。其原因是当施加斩波偏压（3 kV）时， ...更多信息 其中一个偏转电极（另一个电极接地）。(2)由于电子噪声，SSD探测器无法探测到具有小于30 keV的低能量的散射离子。为了改善这些问题，进行了以下系统修改。(1)通过连接到每个偏转电极的两个电压源（每个1.5kV，相反方向）施加偏转电压。通过使用这种配置，束轴的偏转被抑制。(2)用多通道板（MCP）探测器代替SSD探测器探测低能离子（2- 50 keV），并在1997财政年度用离子散射法评价了钛硅化物的硅化反应。结果表明，Si衬底中的杂质原子（Sb）在Si/Ti硅化物和Ti硅化物/Ti氮化物界面处沉淀，起到了硅化物在高温退火过程中氧化的钝化层的作用。少

项目成果

Z.J.Radzimski: "The Performance Study of Ion Implanter Based Medium Energy Ion Spectroscopy with Solid State Detector" Materials Research Society Symposium Proceedings. K3.11 (1994)

Z.J.Radzimski：“基于离子注入机的中能离子光谱与固态探测器的性能研究”材料研究学会研讨会论文集。

廣瀬全孝: "次世代ULSI製造のための表面反応プロセス(第1章分担)" サイエンスフォーラム, 21 (1994)

Masataka Hirose：“下一代 ULSI 生产的表面反应工艺（第 1 章）”科学论坛，21（1994 年）

木地 剛: "Ar^+,Si^+イオン注入Si表面のTiシリサイド反応のイオン散乱による評価" 第44回応用物理学関係連合講演会講演予稿集. 2. (1997)

Tsuyoshi Kiji：“通过离子散射评估 Ar^+,Si^+ 离子注入的 Si 表面上的 Ti 硅化物反应”第 44 届应用物理学会会议记录 2。（1997 年）。

M.Hashimoto: "Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering" Japanese Journal of Applied Physics. 33. L1799-L1802 (1994)

M.Hashimoto：“通过中能离子散射研究硅中的注入锑沉淀”日本应用物理学杂志。

木地 剛: "Sbイオン注入Si表面のTiシリサイド反応の評価" 第58回応用物理学会学術講演会講演予稿集. 2. 825-4aD4 (1997)

Tsuyoshi Kiji：“Sb 离子注入 Si 表面的 Ti 硅化物反应的评估”日本应用物理学会第 58 届年会论文集 2. 825-4aD4 (1997)。