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Monolithic Integration of Ring-Resonator Optical Switches using Electro-Optic Material, on Si LSI

使用电光材料在 Si LSI 上单片集成环形谐振器光开关

基本信息

批准号：
17360166
负责人：
YOKOYAMA Shin
金额：
$ 7.87万
依托单位：
Hiroshima University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

项目摘要

The final target of the research is to realize the on-chip optical interconnection for high-speed LSI. The object of this study is to develop a technology for monolithic integration of compact optical switches on Si LSI at low temperatures below 450℃, at which the devices can be fabricated on top layer of the LSI without degradation of the metal-interconnect reliability.In fiscal year of 2005, Mach-Zhender interferometer (MZI) optical switches were integrated using electro-optical material, (Ba,Sr)TiO_3 (BST), spin-coated and annealed at 550℃. Optical modulation was 2% at 90 V. The results were published in Appl. Phys. Lett. 88, 161107 (2006).In 2006, the performance of the MZI was improved to 10% of modulation at 200 V. We have, for the first time, achieved to decrease the growth temperature of the BST film to 450℃, which is the target value (Jpn. J. Appl. Phys. 46, No. 4B, p. 2462 (2007)).In 2007, we have tried to improve the BST film quality by adjusting composition elements and by employing Pt cap annealing. However, the further improvement of the MZI performance has not been obtained. Instead of the BST film, the strained silicon has been applied to the ring-resonator optical switches, and we have achieved the optical modulation of 33% at 200 V (IEICE Technical Report, OPE2007-143, p. 41 (2007) [in Japanese]). This is the first report on the electric-field drive Si ring-resonator switch, while the previous devices were current injection type with high power consumption. However, it was found that the mechanism of the optical modulation is not by electro-optic effect but by the carrier-concentration modulation at the Si surface induced by the electric-field. The small strain may be the reason for the no observation of the electro-optic effect. The further improvement is now under investigation.

研究的最终目标是实现高速大规模集成电路的片上光互连。本研究的目的是开发一种在450℃以下的低温下在硅大规模集成电路上单片集成紧凑型光开关的技术，使器件可以在大规模集成电路的顶层上制造而不降低金属互连的可靠性。旋涂并在550℃下退火。90 V时光学调制为2%。结果发表在《应用物理快报》上。在2006年，MZI的性能提高到在200 V下调制的10%。我们首次实现了将BST膜的生长温度降低到450℃，这是目标值（Jpn. J.Appl.Phys.46，No.4B，p.2462（2007））。在2007年，我们已经尝试通过调整组成元素和通过采用Pt帽退火来提高BST膜质量。然而，MZI性能的进一步改善尚未获得。代替BST膜，应变硅已经应用于环形谐振器光开关，并且我们已经在200 V下实现了33%的光调制（IEICE Technical Report，OPE 2007 -143，p.41（2007））。这是电场驱动硅环形谐振器开关的首次报道，而以前的器件都是电流注入型的，功耗很高。然而，发现光调制的机制不是通过电光效应，而是通过电场诱导的Si表面载流子浓度调制。小应变可能是没有观察到电光效应的原因。进一步的改进正在调查中。