Characterization at atomic level and nanoprocessing of material using high-voltage electron microscopy

使用高压电子显微镜进行原子级表征和材料纳米加工

• 批准号: 07305031
• 负责人: SAKA Hiroyasu
• 金额: $ 2.37万
• 依托单位: NAGOYA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07305031/
• 关键词: High-voltage electron microscopy; Evaluation at atomic level; nanoprocessing; Elemental mapping; Interface; Surface; Phase transformation; Radiation damage; 原子レベル評価; 高分解能動観察; 局所元素分析; 表面・界面; ミキシング

Fundamental structure and microstructure of a variety of ceramics was characterized on atomic resolution. A new method for characterization of materials by the element mapping was established. Precise analysis of EELS spectra led to determination of electronic structure and elemental analysis from nanometer regions. Local concentration of oxygen in YBCO was determined by the critical voltage effect.Nucleation and growth of the ordered phase in the order-disorder transition was observed by high resolution electron microscopy. Behavior of defects such as dislocations and point defects and also melting process of crystals were observed dynamically. Nano-processing of diamond thin foils was attempted to improve its performance. Radiation damage of materials was also observed.Growth process at the crystal surface and sputtering by electron beam were observed. Diordering and amorphitization of intermetallic compound by electron irradiation was studied and a method of nanocharacterization using an electron beam was established. Electron tomography was applied to identifying structural defects in LSI and its nanoprocessing.

在原子分辨率上表征了各种陶瓷的基本结构和显微结构。建立了一种利用元素映射表征材料的新方法。EELS光谱的精确分析导致从纳米区域确定电子结构和元素分析。利用临界电压效应确定了YBCO中氧的局域浓度，用高分辨电子显微镜观察了有序-无序转变过程中有序相的形核和生长。动态观察了位错、点缺陷等缺陷的行为及晶体的熔化过程。为了提高金刚石薄膜的性能，对金刚石薄膜进行了纳米加工。观察了材料的辐照损伤，观察了晶体表面的生长过程和电子束溅射。研究了电子束辐照金属间化合物的无序化和非晶化，建立了一种电子束纳米表征方法。电子层析成像被应用于识别LSI及其纳米加工中的结构缺陷。

项目成果

K.Suzuki,N.Maeda and S.Takeuchi: "High resolution electron microscopy of dissociated dislocations in silicon with a normal-incident electron beam" Philosophical Magazine, A. 73. 431-441 (1996)

K.Suzuki、N.Maeda 和 S.Takeuchi：“用法向入射电子束观察硅中解离位错的高分辨率电子显微镜”哲学杂志，A. 73. 431-441 (1996)

T.Kamino,T.Yaguchi,M.Tomita and H.Saka: "In-situ high-resolution electron microscopy study on a surface reconstruction of Au-deposited Si at very high temperature" Philosophical magazine,A. 75. 105-114 (1997)

T.Kamino、T.Yaguchi、M.Tomita 和 H.Saka：“极高温下 Au 沉积硅表面重建的原位高分辨率电子显微镜研究”哲学杂志，A。

T.Kamino,H.Saka et al: "Dynamic observation of in situ sintering of SiC crystals at new atomic resolutin" Materials Transactions,JIM. 36. 73-75 (1995)

T.Kamino，H.Saka 等人：“新原子分辨率下 SiC 晶体原位烧结的动态观察”Materials Transactions，JIM。

Ha-G.Jeong, K.Hiraga, M.Mabuchi and K.Higashi: "Interface structure of Si3N4-whisker reinforced Al-Mg-Si alloy studied by high resolution electron microscipy" Philosophiocal Magazine A. 74. 73-80 (1996)

Ha-G.Jeong、K.Hiraga、M.Mabuchi 和 K.Higashi：“通过高分辨率电子显微技术研究 Si3N4 晶须强化 Al-Mg-Si 合金的界面结构” 哲学杂志 A. 74. 73-80 (1996)

Ha-G.Jeong,K.Hiraga,M.Mabuchi and K.Higashi: "Interface structure of Si_3 N_4-whisker-reinforced Al-Mg-Si alloy studied by high-resolution electron microscopy" Philosophical Magazine, A. 74. 73-80 (1996)

Ha-G.Jeong、K.Hiraga、M.Mabuchi 和 K.Higashi：“通过高分辨率电子显微镜研究 Si_3 N_4 晶须强化 Al-Mg-Si 合金的界面结构” 哲学杂志，A. 74. 73