Characterization at atomic level and nanoprocessing of material using high-voltage electron microscopy

利用原子分辨率对各种陶瓷的基本结构和微观结构进行了表征。建立了一种利用元素映射表征材料的新方法。通过对EELS光谱的精确分析，可以确定纳米区域的电子结构和元素分析。临界电压效应决定了YBCO中氧的局部浓度。用高分辨电镜观察了有序相在有序-无序转变过程中的形核和生长。动态观察了位错、点缺陷等缺陷的行为和晶体的熔化过程。尝试对金刚石薄膜进行纳米加工，以改善其性能。材料的辐射损伤也被观察到。观察了晶体表面的生长过程和电子束溅射过程。研究了金属间化合物在电子辐照下的无序和非晶化现象，建立了一种电子束纳米表征方法。应用电子断层扫描技术对大规模集成电路中的结构缺陷进行了识别和纳米加工。

Fundamental structure and microstructure of a variety of ceramics was characterized on atomic resolution. A new method for characterization of materials by the element mapping was established. Precise analysis of EELS spectra led to determination of electronic structure and elemental analysis from nanometer regions. Local concentration of oxygen in YBCO was determined by the critical voltage effect.Nucleation and growth of the ordered phase in the order-disorder transition was observed by high resolution electron microscopy. Behavior of defects such as dislocations and point defects and also melting process of crystals were observed dynamically. Nano-processing of diamond thin foils was attempted to improve its performance. Radiation damage of materials was also observed.Growth process at the crystal surface and sputtering by electron beam were observed. Diordering and amorphitization of intermetallic compound by electron irradiation was studied and a method of nanocharacterization using an electron beam was established. Electron tomography was applied to identifying structural defects in LSI and its nanoprocessing.