权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

STUDY ON NANO-INPROCESS MEASUREMENT OF SILICON WAFER SURFACE DEFECTS

硅片表面缺陷的纳米加工测量研究

基本信息

批准号：
07455064
负责人：
MIYOSHI Takashi
金额：
$ 4.29万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455064/
关键词：
Silicon wafer Surface defects inspection Laser applied measurement Contamination In-process measurement Nano-technology Photorefractive crystal BSO crystal 表面欠陥 Fraunhofer回折ミ-散乱 BSO 超精密

项目摘要

The detection of silicon wafer surface defects is a very important aspect in the continued improvement of the yield and reliability of manufactured devices. The current methods for measuring particulate contamination on surfaces are divided into two general types : (i) manual particle counting, by naked eye or with a microscope, of the light scattered under the illumination of an intense white light source ; (ii) automatic particle counting with a commercially available instrument that uses a He-Ne or He-Cd laser. The manual method does not allow for accurate particle sizing ; the second method does not allow examination of surface defects and particles. For LSI in next generation, these disadvantages are big problems. So, this report describes on development of a new optical measuring method applied to the nano-inprocess measurement of imperfections such as COP,particle, and so on without disadvantages mentioned above. The results obtained in this study are summarized as follows ;Firs … More t, we developed a new optical measuring system, consisting of an Ar laser and the objective lens of high magnification, which can quantitatively evaluate the imperfections by detecting the laser scattered defect patterns. It can be seen that an isolated particle of 0.212,0.605, and 1.16mum was able to be detected clearly as the Laser Scattered Defect Patterns. By measuring the first ring diameter of the Laser Scattered Defect Pattern, the particle size can be evaluated. This method has a feasibility to discriminate the imperfections by making the use of the characteristic of the Laser Scattered Defect Pattern.Second, in order to apply this method to the in-process measurement, we detected the Laser Scattered Defect Pattern not with CCD area sensor but with a photorefractive BSO crystal. we proposed to applied a photorefractive BSO crystal to a volume holographic storage of the Laser Scattered Defect Patterns, which were detected during the inspection of the silicon wafer surface. In order to verify the feasibility of our proposed method, the basic experiment was carried out. As a result, it takes only 10 msec to record a Laser Scattered Defect Pattern in a BSO crystal. Multiple holograms can be recorded in one photorefractive crystal using spatial multiplexing techniques and 5 holograms can be recorded in a BSO crystal (7mm*7mm*3mm). Less

硅片表面缺陷的检测是持续提高硅片成品率和可靠性的一个重要方面。目前测量表面颗粒污染的方法大致分为两种类型：(I)用肉眼或显微镜对在强白光源照射下散射的光进行人工颗粒计数；(Ii)使用商用仪器进行自动颗粒计数，该仪器使用He-Ne或He-Cd激光。手工方法不能准确测定颗粒大小；第二种方法不能检查表面缺陷和颗粒。对于下一代LSI来说，这些缺点是很大的问题。因此，本文介绍了一种新的光学测量方法的发展，该方法适用于CoP、颗粒等缺陷的纳米在线测量，而不存在上述缺点。本研究取得的结果概括如下：FIRS…此外，我们还研制了一种由Ar激光器和高倍率物镜组成的光学测量系统，它可以通过检测激光散射的缺陷图案来定量地评价缺陷。激光散射缺陷图可以清楚地检测到0.212、0.605和1.16微米的孤立粒子。通过测量激光散射缺陷图案的第一环直径，可以估计颗粒的大小。其次，为了将该方法应用于激光散射型缺陷的在线检测，我们不是用面阵CCD面阵传感器，而是用光折变BSO晶体来检测激光散射型缺陷。我们提出将光折变BSO晶体应用于激光散射缺陷图形的体全息存储，这些图形是在检测硅片表面时检测到的。为了验证该方法的可行性，进行了基本实验。因此，在BSO晶体中记录激光散射缺陷图案仅需10毫秒。采用空间多路复用技术，可以在一个光折变晶体中记录多幅全息图，在一个BSO晶体(7 mm*7 mm*3 mm)中可以记录5幅全息图。较少

项目成果

期刊论文数量（18）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

高橋哲,三好隆志,高谷裕浩,吉田晴彦,立野泰史,濱田守: "シリコンウェハ加工表面欠陥のナノインプロセス計測に関する研究(第6報)-付着微粒子の検出パターンの発生メカニズムの検討-" 1997年度精密工学会春季大会学術講演論文集. 東京. 393-394 (1997)

Tetsu Takahashi、Takashi Miyoshi、Hirohiro Takatani、Haruhiko Yoshida、Yasushi Tateno、Mamoru Hamada：《硅晶圆加工表面缺陷的纳米过程测量研究（第六次报告）——附着微粒检测图案生成机制的检验-”1997 年日本精密工程学会春季会议论文集。东京。393-394 (1997)