DEVELOPMENT OF THE NANO-CMP PROCESS APPARATUS CONTROLLED BY OPTICAL RADISTION PRESSURE

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This research aims to realize the planarization with the chemical mechanical polishing where the aggregated marks of fine particles in slurry are created with the optical radiation pressure induced by irradiated laser beam, and to process selective material removal intentionally in small projected areas on the VLS's circuit pattern.In this paper, the considerations to create the aggregated marks by laser beam irradiation onto the surface of silicon wafer were investigated. Furthermore, new planarization method, which fills up the dimples with laser aggregated marks and polish the area as one surface, was proposed and attempted to obtain high planarity on trench-shaped uneven, surface which was processed by FIB (Focused Ion Beam) machining on the silicon wafer surface.This proposed method indicates two unique points as follows ; (1) The aggregated marks are formed with laser irradiation on the surface of silicon wafer. The aggregated marks are made of fine particles in slurry. (2) After aggregated marks are formed and filled up at the recessed areas of surface of silicon wafer, this process is possible to realize high planarity on silicon wafer.As a final result, the smooth surface of less than 1nmRq is obtained with the LAFP (Laser Aggregation Filling-up & Polishing) method, and the method has a high potential for planarization.