DEVELOPMENT OF THE NANO-CMP PROCESS APPARATUS CONTROLLED BY OPTICAL RADISTION PRESSURE

光辐射压力控制的纳米CMP工艺装置的研制

• 批准号: 13355006
• 负责人: MIYOSHI Takashi
• 金额: $ 30.04万
• 依托单位: OSAKA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13355006/
• 关键词: optical radiation pressure; nanotechnology; polishing process; CMP; planarization; laser trapping; silicon wafer; semiconductor

This research aims to realize the planarization with the chemical mechanical polishing where the aggregated marks of fine particles in slurry are created with the optical radiation pressure induced by irradiated laser beam, and to process selective material removal intentionally in small projected areas on the VLS's circuit pattern.In this paper, the considerations to create the aggregated marks by laser beam irradiation onto the surface of silicon wafer were investigated. Furthermore, new planarization method, which fills up the dimples with laser aggregated marks and polish the area as one surface, was proposed and attempted to obtain high planarity on trench-shaped uneven, surface which was processed by FIB (Focused Ion Beam) machining on the silicon wafer surface.This proposed method indicates two unique points as follows ; (1) The aggregated marks are formed with laser irradiation on the surface of silicon wafer. The aggregated marks are made of fine particles in slurry. (2) After aggregated marks are formed and filled up at the recessed areas of surface of silicon wafer, this process is possible to realize high planarity on silicon wafer.As a final result, the smooth surface of less than 1nmRq is obtained with the LAFP (Laser Aggregation Filling-up & Polishing) method, and the method has a high potential for planarization.

本研究的目的是利用化学机械抛光的方法实现平面化，即利用激光束照射产生的光辐射压力在抛光液中产生微粒的聚集标记，并在VLS电路图形上的小投影区域内有目的地进行选择性材料去除。研究了通过激光束照射到硅晶片表面上来产生聚集标记的考虑。提出了一种新的平面化方法，即用激光聚集标记填充凹坑并将其作为一个表面进行抛光，并尝试在FIB加工的沟槽状不平坦表面上获得高的平面度（聚焦离子束）加工硅片表面。该方法具有以下两个独特之处：（1）在硅晶片的表面上通过激光照射形成聚集标记。这些聚集的痕迹是由泥浆中的细颗粒组成的。(2)在硅片表面凹陷区域形成聚集标记并填充后，可以实现硅片的高平坦化，最终采用LAFP（Laser Aggregation Filling-up & Polishing）方法获得了小于1 nm Rq的光滑表面，具有较高的平坦化潜力。

项目成果

木村 景一, 三好 隆志, 高谷 裕浩, 高橋 哲: "光放射圧制御微粒子集積現象に基づくCMP加工に関する基礎的研究"精密工学会誌. 69.1. 89-94 (2003)

Keiichi Kimura、Takashi Miyoshi、Hirohiro Takatani、Satoshi Takahashi：“基于光辐射压力控制粒子积累现象的 CMP 加工的基础研究”日本精密工程学会杂志 69.1（2003 年）。

K.KIMURA, T.MIYOSHI, Y.TAKAYA, S.TAKAHASHI: "Corrective Planarization Method Using Chemical Mechanical Polishing Assisted by Laser Particle Trapping."Laser Assisted Chemical Mechanical Polishing(Proc.of ASPS 2002 Annual Meet). 37-40 (2002)

K.KIMURA、T.MIYOSHI、Y.TAKAYA、S.TAKAHASHI：“使用激光粒子捕获辅助化学机械抛光的校正平面化方法。”激光辅助化学机械抛光（ASPS 2002 年年会议程）。

K.Kimura, T.Miyoshi, Y.Takaya, S.Takahashi: "Corrective Planarization Method Using Chemical Mechanical Polishing Assisted by Lazer Particle Trapping"Proc. of ASPE Annual Meeting. St.Louis. 37-40 (2002)

K.Kimura、T.Miyoshi、Y.Takaya、S.Takahashi：“利用激光粒子捕获辅助的化学机械抛光的校正平面化方法”Proc。

Y.Takaya, K.Kimura, S.Takahashi, T.Miyoshi: "Study on Laser Microstructure Fabrication Using Colloidal Particles Controlled by Radiation Pressure"Proc. of 2002 Japan-USA Symposium on Flexible Automation. Hiroshima. 759-765 (2002)

Y.Takaya、K.Kimura、S.Takahashi、T.Miyoshi：“利用辐射压力控制胶体粒子制造激光微结构的研究”Proc。

K.Kimura, T.Miyoshi, Y.Takaya, S.Takahashi: "New Chemical Mechanical Polishing based on Particle Aggregation by Optical Radiation Pressure"Proc. of Intonational Workshop on Extreme Optics and Sensors, University Academy Press. 269-276 (2003)

K.Kimura、T.Miyoshi、Y.Takaya、S.Takahashi：“基于光辐射压力粒子聚集的新型化学机械抛光”Proc。