MULTI-WAVELENGTH SURFACE EMITTING LASER ARRAY
MULTI-WAVELENGTH SURFACE EMITTING LASER ARRAY
批准号:
07555013
负责人:
KOYAMA Fumio
金额:
$4.48万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Massively integrated parallel optical devices are becoming important for use in future parallel optical fiber communication systems, optical interconnects, parallel optical recording and so on. Vertical cavity surface emitting lasers (VCSELs) have been attracting much interest for optical interconnects as well as for hihg speed parallel optical data links because of their low threshold and ease in optical coupling to fibers. A 2-D array configuration will increase the connection density in optical interconnects. In addition, if multi-wavelength VCSEL arrays are available for wavelength division multiplexing (WDM) interconnects, functionalities such as wavelength routing can be expected. A potential application of VCSELs for WDM systems is multi-wavelength laser arrays.The lasing wavelength of VCSELs is determined primarily by the length, the equivalent refractive index and the lateral size of the cavity. Among them, the lasing wavelength predominantly depends on the cavity length. For … More example, a 1% variation of layr thickness over a wafer produces a fairly large wavelength change of 10nm at a nominal wavelength of 1mum. If we are able to locally control the layr thickness, we can form multi-wavelength 2-D arrays as well as compensate for the nonuniformity of the lasing wavelength across the wafer. A nonplanar MBE growth is proposed as a way of local control of layr thickness for multi-wavelength VCSEL arrays.In this work, we present a novel technique of on-wafer wavelength control of VCSELs using nonplanar metalorganic chemical vapor deposition (MOCVD). The fabrication process is the same as that of standard VCSELs except that the substrates are patterned prior to the growth. Multi-wavelength VCSEL arrays can be fabricated by changing the size of the circular pattern. Low threshold 3*3 multi-wavelength VCSEL arrays were demonstrated by using this technique. The proposed method might be useful to realize muti-wavelength VCSEL arrays with an extremely large wavelength span. Also, we will be able to compensate for the wavelength nonuniformity of VCSELs across a large wafer by using this technique. Less
期刊论文(23)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Toshikazu Mukaihara 他: "Low‐threshold mesa etched vertical‐cavity InGaAs/GaAs surface‐emitting lasers grown by MOCVD" Electronics Letters. 31. 647-648 (1995)
Toshikazu Mukaihara 等人:“通过 MOCVD 生长的低阈值台面蚀刻垂直腔 InGaAs/GaAs 表面发射激光器”《电子快报》31. 647-648 (1995)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Yukio Hayashi 他: "Record low‐threshold index‐guided InGaAlAs vertical‐cavity surface‐emitting laser with a native oxide confinement structure" Electronics Letters. 31. 560-562 (1995)
Yukio Hayashi 等人:“记录具有天然氧化物限制结构的低阈值折射率引导 InGaAlAs 垂直腔表面发射激光器”《电子快报》31. 560-562 (1995)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
T.Mukaihara 他: "Fabrication processes for low thresholod InGaAs vertical-cavity surface-emitting lasers" Physica B. 227. 400-403 (1996)
T. Mukaihara 等人:“低阈值 InGaAs 垂直腔表面发射激光器的制造工艺” Physica B. 227. 400-403 (1996)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
N.Hatori 他: "Characterization of Residual Stress in Active Region due to AlAs Native Oxide of Vertical-Cavity Surface-Emitting Lasers" Jpn. J. Appl. Phys.12A. 6108-6109 (1996)
N. Hatori 等人:“垂直腔表面发射激光器的 AlAs 天然氧化物引起的活性区域残余应力的表征”J. Appl. 6108-6109 (1996)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Fumio Koyama 他: "Low threshold multi-wavelength VCSEL arrays fabricated by nonplanar MOCVD" Proc. of SPIE'95. 2399. 629-635 (1995)
Fumio Koyama 等人:“通过非平面 MOCVD 制造的低阈值多波长 VCSEL 阵列”Proc. of SPIE95. 629-635 (1995)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 21 条
New Functions of VCSEL Photonics
-
批准号:19206012
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$30.45万
-
财政年份:2007
-
负责人:KOYAMA Fumio
-
依托单位:
Widely Tunable Hollow Optical Waveguides and Their Applications for Photonic Network Devices
-
批准号:17068006
-
项目类别:Grant-in-Aid for Scientific Research on Priority Areas
-
资助金额:$60.48万
-
财政年份:2005
-
负责人:KOYAMA Fumio
-
依托单位:
Photonic Integrated Circuits for High Speed Photonic Networks-Challenges for Large Scale Photonic Integration-
-
批准号:14GS0212
-
项目类别:Grant-in-Aid for Creative Scientific Research
-
资助金额:$355.85万
-
财政年份:2002
-
负责人:KOYAMA Fumio
-
依托单位:
FABRICATION OF MULTI-WAVELENGTH LIGHT SOURCES
-
批准号:12450028
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.92万
-
财政年份:2000
-
负责人:KOYAMA Fumio
-
依托单位:
FABRICATION OF MULTI-WAVELENGTHLIGHT SOURCES
-
批准号:11555011
-
项目类别:Grant-in-Aid for Scientific Research (B).
-
资助金额:$4.42万
-
财政年份:1999
-
负责人:KOYAMA Fumio
-
依托单位:
HIGH SPEED MODULATIONS BY USING POLARIZATION SWITCHING OF MICROCAVITY SURFACE EMITTING LASERS
-
批准号:08455034
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$4.86万
-
财政年份:1996
-
负责人:KOYAMA Fumio
-
依托单位:
海外基金