Massively Parallel Optical Interconnection for Realization of Three-Dimensional Integrated Circuits

在工作电流小的硅集成电路上制作小型光学器件是实现三维集成电路的必要条件。首先，我们尝试在Si衬底上生长高质量的Gap层作为初始层。利用迁移增强外延（MEE）抑制了生长初期层错的产生。在Si衬底的GaP层上生长InGaP/GaAs双异质结构发光二极管，获得了正常自发辐射。然后，我们在原子氢(H)照射下，在高质量的干燥sio_2掩膜覆盖的Si衬底上进行了GaAs的选择性生长。通过选择性生长初始GaP层，在Si衬底表面低温形成p预层，阻止了反相畴向表面的传播。通过插入由MEE生长的应变短周期超晶格（ssss），可以降低GaAs选择性外延层中的螺纹位错密度。此外，在晶格松弛的异质界面上引入的错配位错似乎被原子H辐照电钝化了。这些结果可用于制造高质量和高可靠性的小型光学器件，用于堆叠Si集成电路之间的大规模并行光互连。

It is essential to fabricate small optical device on Si integrated circuits, which operate under small current, for realization of three-dimensional integrated circuits. Firstly, we attempted to grow a high quality Gap layr as the initial layr on Si substrates. The generation of stacking faults was suppressed at the initial growth stage using the migration-enhanced epitaxy (MEE).The normal spontaneous emission was obtained from a InGaP/GaAs double-hetero structure light emitting diode grown on the GaP layr on Si substrate.Then, we performed the selective growth of GaAs on Si substrate covered with a high quality dry-SiO_2 mask under atomic hydrogen (H) irradiation. The propagation of anti-phase domains to the surface was prevented by forming a P-prelayr at low temperature on the surface of Si substrate when the initial GaP layr was selectively grown. It was also found that the density of threading dislocations was reduced in a GaAs selective epitaxial layr by inserting strained short-period superlattices (SSPSs) grown by MEE.Moreover, it appeared that misfit dislocations introduced at the heterointerface with lattice relaxation were electrically passivated by atomic H irradiation.These results can be applied to the fabrication of small optical devices with high quality and reliability for massively parallel optical interconnection among stacked Si integrated circuits.