Fabrication of Functional Heteroepitaxial Layers Embedding Devices

III-V族化合物半导体被用于诸如激光二极管等的光电器件和诸如高电子迁移率晶体管等的微波器件。它们是通信和信息终端的关键材料。另一方面，第IV元素的硅（Si）半导体已被广泛用作用于包括计算机的电子系统的LSI。如果将这两种半导体组合成一个芯片，就可以开发出新的器件。在Si衬底上生长III-V族化合物半导体时，尽管进行了许多研究，但仍会产生大量的晶体缺陷，特别是位错。这是由价电子数的差异、晶格常数和热膨胀系数的巨大差异引起的。因此，还没有开发出新的设备。在这项研究工作中，我们试图通过关注晶格常数的失配， 关于我们 解决了由于价电子数不同而引起的热膨胀系数的问题。通过在Si衬底上生长GaPN和GaAsPN的III-V-N化合物半导体来尝试晶格匹配。预期Si覆盖层抑制由于热膨胀系数的差异而在生长后的冷却阶段引入的热应变。结果，首次在Si衬底上成功地生长了无位错的III-V-N层。即使在异质界面处也没有观察到穿线位错和错配位错。生长了无位错的GaAsPN/GaPN量子阱结构和Si/GaPN/Si结构。Si/GaPN/Si结构是新型光电集成电路的标志性结构。GaPN层可以用用于光学或微波器件的层代替，并且Si覆盖层用于LSI。为了扩大器件的设计能力，需要增加氮含量。通过在原子氢辐照下的低温生长实现了7- 10%的高氮含量。少

III-V compound semiconductors were utilized for optoelectronic devices such as laser diodes and others and microwave devices such as high electron mobility transistors and others. They are key materials for communication and information terminals. On the other hand, a silicon (Si) semiconductor of a Ivth element has been widely used as LSIs for electronic systems including computers. If both semiconductors are combined as a single chip, novel devices could be developed.When the III-V compound semiconductor is grown on the Si substrate, a large number of crystalline defects, specifically dislocations were generated in spite of many researches. It is caused by the difference in the number of valence electrons, the large difference in lattice constants and of thermal expansion coefficients. Then, novel devices have not been developed. In this research work, we tried to grow dislocation-free III-V compound semiconductors on Si substrates by focusing on the mismatch of lattice constants and … More of thermal expansion coefficients since the problem caused by the difference of the number of valence electrons has been solved by us. Lattice matching was tried by growing III-V-N compound semiconductors of GaPN and GaAsPN on the Si substrate. A Si capping layer was expected to suppress the thermal strain introduced at a cooling stage after growth due to the difference in thermal expansion coefficients. As a result, the dislocation -free III-V-N layers were successfully grown on the Si substrate for the first time. Neither threading dislocations nor misfit dislocations were observed even at hetero-interfaces. A dislocation-free GaAsPN/GaPN quantum well structure and Si/GaPN/Si structure were also grown. The Si/GaPN/Si structure is a symbolic structure for novel optoelectronic integrated circuits. The GaPN layer can be replaced with a layer for optical or microwave device and the Si capping layer is utilized for LSIs. Thus, a basic technology was developed for novel optoelectronic integrated circuits.In order to expand the capability of device design, the increase of nitrogen contents is needed. High nitrogen contents of 7-10 % were achieved by low temperature growth under atomic hydrogen irradiation. Less