权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

DEVELOPMENT OF MULTIPLY PHOTO-ASSISTED MOVPE FOR FABRICATION OF SEMICONDUCTOR BLUE LASER DIODES

开发用于制造半导体蓝色激光二极管的多重光辅助MOVPE

基本信息

批准号：
07555411
负责人：
YOSHIKAWA Akihiko
金额：
$ 0.77万
依托单位：
Chiba University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555411/
关键词：
COMPOUND SEMICONDUCTOR II-VI COMPOUNDS ZnSe OPTICAL PROBE MOVPE BLUE LIGHT DEVICES SURFACE PHOTO INTERFRENCE REFLECTANCE DIFFERENCE

项目摘要

A new multiply photo-assisted MOVPE system suitable for both growth and p-type doping of widegap II-VI compound semiconductors has been developed in this work. Two laser beams, i.e., Ar-ion laser and He-Ne laser, were used as light sources for photo-assistance and optical probing, respectively. Further, in some cases, an Ar ion laser beam was splitted into two beams and they are used for both photo-assistance and optical probing. As for the in-situ optical probing method, so-called RD (reflectance difference) and SPI (surface photo-interference) methods were adopted. With using this MOVPE system, both epitaxial growth and p-type doping processes in MOVPE of ZnSe layrs on GaAs when using DMZn, DMSe, H_2Se and tBNH_2 were investigated, and following results were obtained.First, it has been found that oscillations with monolayr periodicity in both RD and SPI signal traces have been successfully detected for the first time in MOVPE of ZnSe. On the basis of these optical signal traces observed during growth, the surface-structure during growth was found to be greatly dependent on the used source materials and photoirradiation. Further it was found that (1) when using H_2Se as the Se-source, tBNH_2 molecules are selectively adsorbed on the "Zn-terminated" surface and not on the "Se-terminated" surface, while (2) they can be adsorbed on both surfaces when using DMSe as the Se-source.On the basis of these results, both selective nitrogen-doping on "Zn-terminated" surface in ALE growth mode and photo-assisted doping of nitrogen in conventional photo-assisted MOVPE mode were investigated ; it has been found that the ZnSe layrs can be effectively doped with nitrogen in both cases, though thermal annealing is still effective to improve both electrical and optical properties of the epitaxial layrs.

本文提出了一种新的适用于宽禁带II-VI族化合物半导体生长和p型掺杂的多重光辅助MOVPE系统。两个激光束，即，分别采用Ar离子激光和He-Ne激光作为光辅助光源和光探测光源。此外，在某些情况下，Ar离子激光束被分成两束，它们用于光辅助和光学探测。对于原位光学探测方法，采用了所谓的RD（反射率差）和SPI（表面光干涉）方法。利用该MOVPE系统，研究了用DMZn、DMSe、H_2Se和tBNH_2在GaAs衬底上进行ZnSe层MOVPE的外延生长和p型掺杂过程，得到以下结果：第一，首次在ZnSe的MOVPE中成功地探测到RD和SPI信号迹线的单层周期性振荡;在生长过程中观察到的这些光信号轨迹的基础上，生长过程中的表面结构被发现是在很大程度上依赖于所使用的源材料和光照射。进一步发现：（1）以H_2Se为硒源时，tBNH_2分子选择性地吸附在“Zn端”表面上，而不吸附在“Se端”表面上;（2）以DMSe为硒源时，tBNH_2分子可以同时吸附在两个表面上。研究了ALE生长模式下“Zn端”表面的选择性氮掺杂和传统光助MOVPE模式下的光助氮掺杂;已经发现，在这两种情况下，ZnSe层都可以有效地掺杂氮，尽管热退火仍然有效地改善外延层的电学和光学性质。