A New in-situ Optical Probing Method for the Surface Reaction in Heteroepitaxy : Surface Photo-Interference

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A new in-situ optical probing method for studying surface reactions during heteroepitaxial growth has been proposed. The new method was named surface photo-interference (SPI) , because the concept of the SPI is essentially concerned with a photo-interference in the heteroepilayr. The experimental setup of the method is very similar to another optical probing method called surface photo-absorption (SPA) , but the principle is quite different between the two. Unlike SPA,fairly low energy photons that are transparent for the epilayr can also be used in SPI as a probing light. Reflecting this feature, SPI is especially useful for studying growth kinetics in heteroepitaxial growth of widegap II-VI compounds, because the effect of photocatalytic growth-rate enhancement can be avoided when using such low energy photons as a probing light. A theoretical description of SPI signal was given, and experimental results detected in MOMBE of ZnSe and CdSe were precisely discussed. Further, how SPI differs from SPA has also been discussed.