A New in-situ Optical Probing Method for the Surface Reaction in Heteroepitaxy : Surface Photo-Interference

异质外延表面反应的一种新的原位光学探测方法：表面光干涉

• 批准号: 05452092
• 负责人: YOSHIKAWA Akihiko
• 金额: $ 4.03万
• 依托单位: CHIBA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05452092/
• 关键词: real time monitoring; optical probing; suface photo-interference; compound semiconductors; hetero epitaxy; zinc selenide; MOVPE; SPI; エピタキシー; 結晶成長

A new in-situ optical probing method for studying surface reactions during heteroepitaxial growth has been proposed. The new method was named surface photo-interference (SPI) , because the concept of the SPI is essentially concerned with a photo-interference in the heteroepilayr. The experimental setup of the method is very similar to another optical probing method called surface photo-absorption (SPA) , but the principle is quite different between the two. Unlike SPA,fairly low energy photons that are transparent for the epilayr can also be used in SPI as a probing light. Reflecting this feature, SPI is especially useful for studying growth kinetics in heteroepitaxial growth of widegap II-VI compounds, because the effect of photocatalytic growth-rate enhancement can be avoided when using such low energy photons as a probing light. A theoretical description of SPI signal was given, and experimental results detected in MOMBE of ZnSe and CdSe were precisely discussed. Further, how SPI differs from SPA has also been discussed.

提出了一种新的原位光学探测方法来研究异质外延生长过程中的表面反应。这种新方法被命名为表面光干涉（SPI），因为SPI的概念本质上与异质外延层中的光干涉有关。该方法的实验装置与另一种称为表面光吸收（SPA）的光学探测方法非常相似，但两者的原理有很大不同。与 SPA 不同，对于外延层透明的相当低能量的光子也可以在 SPI 中用作探测光。反映这一特征的 SPI 对于研究宽禁带 II-VI 化合物异质外延生长的生长动力学特别有用，因为当使用如此低能量的光子作为探测光时，可以避免光催化生长速率增强的影响。给出了SPI信号的理论描述，并对ZnSe和CdSe的MOMBE检测结果进行了精确的讨论。此外，还讨论了 SPI 与 SPA 的不同之处。

项目成果

S.Tokita,M.Kobayashi,A.Yoshikawa: "In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth by surface photo-interference" Journal of Crystal Growth. 136. 376-380 (1993)

S.Tokita，M.Kobayashi，A.Yoshikawa：“通过表面光干涉对 ZnSe 金属有机分子束外延生长进行原位探测”晶体生长杂志。

S.Tokita: "In-situ probing of the ZnSe MOMBE Growth Process by Surface Photo-Interference Method" Journal of Crystal Growth. 採録決定.

S. Tokita：“通过表面光干涉法对 ZnSe MOMBE 生长过程进行原位探测”，《晶体生长杂志》已接受。

S.Matsumoto,H.Tosaka,T.Yoshida,M.Kobayashi,A.Yoshikawa: "Nitrogen doping of ZnSe and ZnCdSe with the assistance of thermal energy and photon energy" Japanese Journal of Applied Physics,. 32No.2,. 731-734. (1993)

S.Matsumoto，H.Tosaka，T.Yoshida，M.Kobayashi，A.Yoshikawa：“热能和光子能辅助下的 ZnSe 和 ZnCdSe 氮掺杂”，日本应用物理杂志，。

A.Yoshikawa,M.Kobayashi,S.Tokita,: "Surface reaction mechanism in MOMBE-ALE of ZnSe and CdSe as determined by a new in-situ optical probing method" Applied Surface Science,. 82/83. 316-321 (1994)

A.Yoshikawa，M.Kobayashi，S.Tokita，：“通过新的原位光学探测方法确定的 ZnSe 和 CdSe MOMBE-ALE 中的表面反应机制”Applied Surface Science，。

A.Yoshikawa: ""Ar ion laser-assisted metalorganic vapor phase epitaxy of ZnSe"" Physica B. vol.185. 50-64 (1993)

A.Yoshikawa：“Ar离子激光辅助ZnSe金属有机气相外延”，Physica B. vol.185。