Fabrication of PZT thin films using digital-MOCVD method and its application for electronic devices

数字MOCVD法制备PZT薄膜及其在电子器件中的应用

• 批准号: 07555418
• 负责人: KUROIWA Koichi
• 金额: $ 2.24万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555418/
• 关键词: Ferroelectric films; non-volatile memory; PZT; perovskite structure; digital-MOCVD; 強誘電体薄膜; ペロブスカイト

Recently, ferroelectric thin films such as Lead based perovskite structure have been actively studied as one of the promising materials for capacitor dielectric films in dynamic random-access memories (DRAMs) and ferroelectric random-access memories (FeRAMs), and for gate insulators in ferroelectric-gate FETs with metal-ferroelectric-semiconductor (MFS) gate structure. In particular, MFS-FET is expected to be one of the leading candidates for the future memory devices because of its non-volatility, high switching speed, high integration without storage capacitors, and so on. However, there have been few satisfactory results regarding fabrication of ferroelectric thin films directly on Si substrates, because there have been difficulties in the formation of ferroelectric/Si interfaces due to interdiffusions and lattice mismatches between them. ln this research. Pb(Zr, Ti)O_3 (PZT)/MgO/Si(0O1) stacked structure, which is one of the principle components of ferroelectric-gate FETs, has been fabricated and characterized. Using both the theta-2theta and the 2-dimensional X-ray diffraction (XRD) method, the fully epitaxial relationship of PZT[100]//MgO[100]//Si[110] has been confirmed in the PZT(001)/MgO(001)/Si(001) stacked structure fabricated with the maximum processing temperature of 480ﾟC.The fully epitaxial relationship causes no affection on the electrical properties of PZT and Si. Especially for MgO/Si interfaces, itwould make possible to control the surface potential of Si by the gate voltages in ferroelectric-gate FETs.

近年来，铁电薄膜如铅基钙钛矿结构作为动态随机存取存储器（DRAM）和铁电随机存取存储器（FeRAM）中的电容器介质膜以及具有金属-铁电-半导体（MFS）栅极结构的铁电栅FET中的栅极绝缘体的有前途的材料之一已经被积极地研究。特别是MFS-FET由于其非易失性、高开关速度、高集成度、无存储电容等优点，被认为是未来存储器件的主要候选器件之一。因为由于它们之间的相互扩散和晶格失配，在形成铁电/Si界面时存在困难。在这项研究中。制备了铁电栅场效应晶体管的主要元件之一Pb（Zr，Ti）O_3（PZT）/MgO/Si（0O_1）叠层结构，并对其进行了表征。利用θ-2 θ和二维X射线衍射（XRD）方法，在最高加工温度为480 ℃的PZT（001）/MgO（001）/Si（001）叠层结构中，证实了PZT[100]//MgO[100]//Si[110]的完全外延关系，这种完全外延关系对PZT和Si的电学性能没有影响。特别是对于MgO/Si界面，这将使得在铁电栅FET中通过栅电压控制Si的表面电势成为可能。

项目成果

Tomo Ueno: "Epitaxial growth of ferroelectric thin films on Si substrates using MgO intermediate layer." Proc. of Korea-Japan joint Workshop of the Deposition and Device Applications of Ferroelectric Thin Films, Taejon, Korea,. 25-30 (1997)

Tomo Ueno：“使用 MgO 中间层在硅基板上外延生长铁电薄膜。”

森岡あゆ香: "原子状酸素の高効率生成とSi(100)基板の低温酸化への応用" 応用物理学会薄膜表面分科会特別研究会. 189-192 (1997)

Ayuka Morioka：“原子氧的高效生成及其在 Si(100) 衬底低温氧化中的应用”日本应用物理学会薄膜表面小组委员会特别研究组 189-192 (1997)。

Junji Senzaki: "Characterization of Pb (Zr, Ti) O3 thin films on Si substrates using MgO intermediate layer for metal/ferroelectric/insulator/semiconductor field effect transistor devices." Japanese Journal of Applied Physics. 37. 5150-5153 (1998)

Junji Senzaki：“使用用于金属/铁电体/绝缘体/半导体场效应晶体管器件的 MgO 中间层对 Si 基板上的 Pb (Zr, Ti) O3 薄膜进行表征。”

Tomo Ueno: "Epitaxial growth of ferroelectric thin films on Si substrates using MgO intermediate layer." Proc.Of Korea-Japan Joint Workshop of the Deposition and Device Applications of Ferroelectric Thin Films, Taejon, Korea. 25-30 (1997)

Tomo Ueno：“使用 MgO 中间层在硅基板上外延生长铁电薄膜。”

Junji Senzaki: "Fabrication and characterization of epitaxial MgO thin films on Si substrates." Electroceramics in Japan. II (in press).

Junji Senzaki：“硅衬底上外延 MgO 薄膜的制造和表征。”