Effects of Inter-molecular Interaction of Surface Adsorbed Molecules in Synchrotron Radiation Stimulated CVD

同步辐射刺激CVD中表面吸附分子的分子间相互作用的影响

• 批准号: 07650040
• 负责人: URISU Tsuneo
• 金额: $ 1.28万
• 依托单位: Okazaki National Research Institutes
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650040/
• 关键词: synchrotron radiation; Core electron excitations; IRAS; carbon contamination; dimethyl aluminum hydride; disilanc; gas source MBE

Surface SiHn on the Si (100) was in situ observed during the synchrotron radiation simulated Si gas source MBE by using the buried metal layr infrared reflection absorption spectroscopy. SiH was mainly observed at around 400 C,and SiH_2 and SiH_3 appeared and increased with decreasing substrate temperature. SiH_2 and SiH_3 were decomposed by the SR irradiation, but SiH was not decomposed.Carbon contamination was investigated in the Al thin films deposited by the SR irradiations on the low temperature condensed layr of dimethyl aluminum hydride. The excitation wavelength dependence of the carbon contamination was measured by using LiF,C,and Al thin film filters. It was found that the carbon contamination was not decreased by the valence electron excitations, but decreased to about 1/2 by the core electron excitations. The deposition yield is two or three orders of magnitude larger in the core electron excitations compared with the valence electron excitations.

在同步辐射模拟Si气源分子束外延过程中，利用埋层红外反射吸收光谱原位观察了Si（100）表面SiHn的变化。SiH主要在400 ℃左右出现，SiH_2和SiH_3出现并随衬底温度的降低而增加。研究了在二甲基氢化铝（DMH）低温凝聚层上SR辐照沉积Al薄膜的碳污染情况。用LiF、C和Al薄膜滤光片测量了碳污染的激发波长依赖性。结果表明，价电子激发并不能减少碳污染，而芯电子激发使碳污染减少到约1/2。与价电子激发相比，芯电子激发的沉积产率大两个或三个数量级。

项目成果

T.Urisu, A.Yoshigoe, and Y.Imaizumi: "Synchrotron Radiation-Stimulated Semiconductor Process and New Prospects of Core Electron Excitation Photochemistry" Optoelectronics-Devices and Technologies-. 11. 57 (1996)

T.Urisu、A.Yoshigoe 和 Y.Imaizumi：“同步辐射刺激半导体工艺和核心电子激发光化学的新前景”光电器件和技术。

Y.Imaizumi: "Synchrotron Radiation Irradiation Effects on Low-temperature Condensed Layer of Dimethyl Aluminum Hidride on SiO_2" J.Electron Spectroscopy and Related Phenomena. 80. 93-96 (1996)

Y.Imaizumi：“同步辐射辐照对SiO_2上二甲基氢化铝低温凝聚层的影响”J.电子能谱及相关现象。

Akitaka Yoshigoe, Mitsuru Nagasono, Kazuhiko Mase, Tsuneo Urisu, Setsuko Seki and Yoshitsugu Nakagawa: "In Situ Detection of Surface SiHn in Synchrotron-Radiation-Induced Chemical Vapor Deposition of a-Si on an SiO_2 Substrate" J.Synchrotron Red.2. 196-20

Akitaka Yoshigoe、Mitsuru Nagasono、Kazuhiko Mase、Tsuneo Urisu、Setsuko Seki 和 Yoshitsugu Nakakawa：“在 SiO_2 基板上同步辐射诱导非晶硅化学气相沉积中表面 SiHn 的原位检测”J.Synchrotron Red.2。

K.Mase: "Development of Electron-Ion Coincidence Spectroscopy for the Study of Surface Dynamics" Bull.Chem.Soc.Jpn.69. 1829-1832 (1996)

K.Mase：“用于表面动力学研究的电子-离子符合光谱的发展”Bull.Chem.Soc.Jpn.69。

T.Urisu: "Synchrotron Radiation-Stimulated Semiconductor Process and New Prospects of Core Electron Excitation Photochemistry" Optoelectronics-Devices and Technologies-. 11. 57-70 (1996)

T.Urisu：“同步辐射刺激半导体工艺和核心电子激发光化学的新前景”光电器件与技术。