Single Molecule Process by Core Electron Excitations and Application to New material Creation

核心电子激发的单分子过程及其在新材料制备中的应用

• 批准号: 09650037
• 负责人: URISU Tsuneo
• 金额: $ 1.09万
• 依托单位: Okazaki National Research Institutes
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650037/
• 关键词: synchrotron radiation stimulated process; infrared reflection absorption spectroscopy; scanning tunneling electron microscopy; STM (5) IRRAS (6) multi layered mirror; Si; Si; 多層膜ミラー; 多層膜ミラー分光器; 走査トンネル顕微鏡

As an in-situ observation technique of synchrotron radiation stimulated processes, infrared reflection absorption spectroscopy using buried metal layer substrate ( BML-IRRAS ), and scanning tunneling electron microscopy ( STM ) techniques were developed, and applied to the atom and molecular level characterization of the surface reaction was investigated. Furthermore, as an supporting experimental apparatus to investigate the excitation energy dependence of the synchrotron radiation stimulated process, high flux monochromator-multilayered mirror monochromator- and electron ion coincidence technique were developed.1. BML-IRRAS has characteristics of high sensitivity and covering wide frequency range including finger print regions. The surface vibrations of hydrogen chemisorbed Si ( 100 ) surface with 3 x 1 and 1 x 1 structures are investigated by BML-IRRAS. It is clearly observed for the first time that SiHィイD22ィエD2 bend scissors mode splits to two distinct peaks locating at 902 and 913 … More cmィイD1-1ィエD1, which are assigned to isolated dihydride ( ID ) and adjacent dihydride (AD ) species, respectively. From the annealing temperature dependence of the spectra, it is also found that two symmetric stretching peaks of 2107 and 2091 cmィイD1-1ィエD1 reported previously are assigned to the vibrational modes of AD and ID, respectively.2. The surface morphology of Si ( 111 ) was investigated using scanning tunneling microscopy after desorption of surface SiOィイD22ィエD2, by synchrotron radiation illumination. The surface shows large regions of atomically flat Si ( 111 )-7x7 structure, and is characterized by the formation of single bilayer steps nicely registered to the underlying crystal structure. This is in sharp contrast to Si ( 111 ) surfaces after thermal desorption of SiOィイD22ィエD2 at temperatures 880℃ and above, where the surface steps are much more irregular. The registration of the surface steps to the underlying crystal structure indicates that the Si (111 ) surface reaches thermodynamic equilibrium under synchrotron radiation irradiation at temperatures much lower than that necessary for thermal desorption. Less

作为同步辐射刺激过程的原位观测技术，利用埋层衬底红外反射吸收光谱(BML-IRRAS)和扫描隧道电子显微镜(STM)技术，研究了表面反应的原子和分子水平表征。此外，发展了高通量单色仪-多层镜式单色仪-电子离子符合技术，作为研究同步辐射激发过程中激发能量依赖关系的辅助实验装置。BML-IRRAS具有灵敏度高、覆盖包括指纹区域在内的宽频率范围的特点。用BML-IRRAS研究了氢化学吸附3×1和1×1结构的Si(100)表面的表面振动。首次清楚地观察到SihィイD22ィエD2弯曲剪刀模分裂成位于902和913…的两个不同的峰更多的Cmィイd1-1ィエd1，分别归属于孤立的二氢化合物(ID)和相邻的二氢化合物(AD)。从光谱随退火温度的关系还发现，先前报道的2107和2091 cmィイd1-1ィエd1的两个对称伸缩峰分别归属于AD和ID的振动模。用扫描隧道显微镜研究了SiO-ィイ-D22-ィエ-D2表面经同步辐射脱附后的表面形貌。表面显示出大范围的原子平坦的Si(111)-7x7结构，其特征是形成了与底层晶体结构很好地吻合的单双层台阶。这与SiOィイD22ィエD2在880℃及以上温度下热脱附后的Si(111)表面形成了鲜明的对比，后者的表面台阶更加不规则。表面台阶与底层晶体结构的配准表明，在同步辐射辐照下，Si(111)表面在远低于热脱附所需的温度下达到热力学平衡。较少

项目成果

Mitsuru Nagasono: "Auger-final-state Selected Ion Description Study of Condensed NH_3 and ND_3 by Using Auger Elestron-Photoion Coincidence Spectroscopy"Surf. Sci.. 337-339. 380-383 (1997)

Mitsuru Nagasono：“使用俄歇电子-光子符合光谱对凝聚态 NH_3 和 ND_3 进行俄歇终态选择离子描述研究”冲浪。

Shinya Hirano: "Annealing and synchrotron Radiation Irradiation Effects on Hydrogen Terminated Si(100) Surfaces Investigated Infrared Reflection Absorption Spectroscopy"Jpn. J. Appl. Phys.. 37. 6991-6995 (1998)

Shinya Hirano：“通过红外反射吸收光谱研究氢封端的 Si(100) 表面的退火和同步加速器辐射照射效应”Jpn。

Shin-ichi nagaoka: "Site-specific phenomena in Si ; 2p core-level photoionization of X_3Si(CH_2)nSi(CH_3)_3(X=F or CI,n=0-2) condensed on a Si(111) surface"Chem. Phys.. 249. 15-27 (1999)

Shin-ichi nagaoka：“Si 中的位点特定现象；凝聚在 Si(111) 表面上的 X_3Si(CH_2)nSi(CH_3)_3(X=F 或 CI,n=0-2) 的 2p 核心级光电离”

Shinya Hirano: "Ultra High Vacuum Reaction Apparatus for Synchrotron Radiation Stimulated Process"J. Synchrotron Rad.. 5. 1363-1368 (1998)

Shinya Hirano：“用于同步辐射刺激过程的超高真空反应装置”J。

Yoshiaki Imaizumi: "Quantum Yield and Carbon Contamination in Thin Film Deposition Reaction by Core Electron Excitations"Surf. Sci. Lett.. 437. L755-760 (1999)

Yoshiaki Imaizumi：“核心电子激发薄膜沉积反应中的量子产率和碳污染”冲浪。