A STUDY ON SILICON HETEROINTERFACE FORMATION AND CONTROL BY LOW-ENERGY ION BEAM DEPOSITION

低能离子束沉积硅异质界面的形成及控制研究

• 批准号: 07650039
• 负责人: SHOJI Fumiya
• 金额: $ 1.47万
• 依托单位: KYUSHU KYORITSU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650039/
• 关键词: HETEROEPITAXY; ION SCATTERING; SILICON; SURFACE AND INTERFACE; THIN FILM; THIN FILM GROWTH; SURFACE ANALYSIS; SURFACESTRUCTURE; Ion Scattering; Surface and Interface; Surface Structure; Surface analysis; イオン蒸着; イオンビーム分析; シリコン表面; エピタキシ-; イオ

The semiconductor industry is constantly striving for ever smaller device dimensions. Future high-speed electronic devices may be built up from low-dimensional structures involving layrs and lines as little as a few atomic diameters across. Now, it is becoming possible to discuss on mechanisms of epitaxial growth from the microscopic standpoint, because of rapidly developing field of surface analysis techniques. However, a clear explanation has not been made on detail physics of the hetroepitaxy. It is the purpose of this work to systematically investigate how two-dimensional interface phase controls the heteroepitaxial growth.Three experimental programs were performed in a period of this work. The results obtained are described below.1, Analysis of Si (100) -2x1 : H surface hydrogen :By using low-energy recoil ion spectroscopy technique, we have investigated the structure of Si (100) -1x1 : 2H dihydride and Si (100) -2x1 : H monohydride surfaces. Comparing our experimental results wit … More h computer simulations, we conclude that the H-Si bond angle in the Si (100) -2x1 surface is 65-70ﾟ and that in the Si (100) -1x1 : 2H surface is 55-60ﾟ For the dihydride surface, canted dihydride structure is suggested.2, Analysis of Bi-induced (1x1) structure of the Si (100) surface :We have carried out the structure analysis of Bi-induced (1x1) surface by using low-energy ion scattering spectroscopy technique. We have shown that the (1x1) surface is induced by Bi atoms with periodicity of bulk-like Si (100) -1x1, however, there are many Bi vacancies in the ordered structure with the (1x1) periodicity.3, Si heterointerface control by low-energy ion beam deposition and scattering :We have newly developed low-energy ion beam deposition system which is integrated into analytical facilities of low-energy ion scattering and low-energy electron diffraction to allow characterization of surfaces with or without ion beam deposition. Preliminary experimental measurements are carried out using a Bi ion source. It is confirmed that Bi ion beams can be obtained in the energy range 50-550eV and that hte Bi ion beam deposition proceeds on Si (100) clean surface by in-situ measurement of low-energy ion scattering spectrometry. Less

半导体行业一直在努力实现更小的器件尺寸。未来的高速电子设备可能是由低维结构组成的，这些结构涉及到横跨几个原子直径的层和线。现在，由于表面分析技术的迅速发展，从微观角度讨论外延生长的机理成为可能。然而，对于异质外延的详细物理机制，目前还没有一个明确的解释。本工作的目的是系统地研究二维界面相对异质外延生长的控制作用。研究结果如下：1、Si(100)-2x1：H表面氢的分析：用低能反冲离子光谱技术研究了Si(100)-1x1：2H二氢化合物和Si(100)-2x1：H单氢化物表面的结构。将我们的实验结果与…进行比较进一步的计算机模拟表明，Si(100)-2x1表面的H-Si键角为65-70ﾟ，而Si(100)-1x1：2H表面的H-Si键角为55-60ﾟ。2、Si(100)表面的铋诱导(1x1)结构分析：利用低能离子散射技术对铋诱导的(1x1)表面进行了结构分析。结果表明，(1x1)表面是由具有类体态Si(100)-1x1周期的Bi原子诱导的，但有序结构中存在许多具有(1x1)周期的Bi空位。3、低能离子束沉积和散射对Si异质界面的控制：我们新开发的低能离子束沉积系统集成到低能离子散射和低能电子衍射的分析设备中，可以表征有或没有离子束沉积的表面。利用铋离子源进行了初步的实验测量。通过低能离子散射谱的原位测量，证实了在50-550 eV能量范围内可以获得铋离子束，并在Si(100)清洁表面上进行了铋离子束沉积。较少

项目成果

F.Shoji et al.: "Inelastic energy loss of recoiled hydrogen ions in low-energy He^+, Ne^+, and Ar^+ collisions with hydrogenated silicon surface" Nucl.Instrum.& Methods. B115. 196-199 (1996)

F.Shoji 等人：“低能 He^ 、 Ne^ 和 Ar^ 与氢化硅表面碰撞时反冲氢离子的非弹性能量损失”Nucl.Instrum。

F.Shoji and K.Oura: "Hydrogen analysis of silicon surface by low-energy ion beams" J.Nucl.Materials. (to be published).

F.Shoji 和 K.Oura：“通过低能离子束对硅表面进行氢分析”J.Nucl.Materials。

F. Shoji, A. Yamada and K. Oura: "In elastic energy loss of recoiled hydrogen ions in low energy He^+, Ne^+, and Ar^+ collisions with hydrogenated silicon surface" Nucl, Instrum. Methods, Physics Research B. (in press).

F. Shoji、A. Yamada 和 K. Oura：“低能 He^、Ne^ 和 Ar^ 与氢化硅表面碰撞时反冲氢离子的弹性能量损失”Nucl，Instrum。

F. Shoji et al: "Sconning tunneling microscopy observation of bismuth growth on Si(100) surface" Surf. sci.(in press).

F. Shoji 等人：“Si(100) 表面上铋生长的扫描隧道显微镜观察”Surf。

F.Shoji and K.Oura: "Hydrogen analysis of silicon surfaces by low-energy ion beams" to be published in : J.Nucl. Materials.

F.Shoji 和 K.Oura：“通过低能离子束对硅表面进行氢分析”，即将发表于：J.Nucl。