A STUDY ON SILICON HETEROINTERFACE FORMATION AND CONTROL BY LOW-ENERGY ION BEAM DEPOSITION

半导体工业一直在追求更小的器件尺寸。未来的高速电子设备可能由低维结构构成，其中包括只有几个原子直径大小的层和线。现在，由于表面分析技术的迅速发展，从微观角度探讨外延生长的机理成为可能。然而，对异质外延的具体物理性质尚未有明确的解释。本文的目的是系统地研究二维界面相是如何控制异质外延生长的。在一段时间内进行了三个实验项目。获得的结果如下所述。1、Si (100) -2x1: H表面氢的分析：利用低能反冲离子光谱技术，研究了Si (100) -1x1: 2H二氢化物和Si (100) -2x1: H一氢化物表面的结构。结果表明，Si (100) -1x1 - 2H表面的h -Si键角为65 ~ 70，Si (100) -1x1: 2H表面的h -Si键角为55 ~ 60。对于二氢化物表面，建议采用倾斜二氢化物结构。2、Si（100）表面Bi-induced （1x1）结构分析：我们利用低能离子散射光谱技术对Si（100）表面Bi-induced （1x1）结构进行了分析。我们已经证明了（1x1）表面是由具有（1x1）周期性的Bi原子诱导的，然而，在具有（1x1）周期性的有序结构中存在许多Bi空位。3、通过低能离子束沉积和散射控制硅异质界面：我们新开发了低能离子束沉积系统，该系统集成了低能离子散射和低能电子衍射分析设备，可以对有或没有离子束沉积的表面进行表征。使用Bi离子源进行了初步的实验测量。通过低能离子散射光谱原位测量，证实了在50 ~ 550ev的能量范围内可以获得Bi离子束，并且在Si（100）清洁表面进行了Bi离子束沉积。少

The semiconductor industry is constantly striving for ever smaller device dimensions. Future high-speed electronic devices may be built up from low-dimensional structures involving layrs and lines as little as a few atomic diameters across. Now, it is becoming possible to discuss on mechanisms of epitaxial growth from the microscopic standpoint, because of rapidly developing field of surface analysis techniques. However, a clear explanation has not been made on detail physics of the hetroepitaxy. It is the purpose of this work to systematically investigate how two-dimensional interface phase controls the heteroepitaxial growth.Three experimental programs were performed in a period of this work. The results obtained are described below.1, Analysis of Si (100) -2x1 : H surface hydrogen :By using low-energy recoil ion spectroscopy technique, we have investigated the structure of Si (100) -1x1 : 2H dihydride and Si (100) -2x1 : H monohydride surfaces. Comparing our experimental results wit … More h computer simulations, we conclude that the H-Si bond angle in the Si (100) -2x1 surface is 65-70ﾟ and that in the Si (100) -1x1 : 2H surface is 55-60ﾟ For the dihydride surface, canted dihydride structure is suggested.2, Analysis of Bi-induced (1x1) structure of the Si (100) surface :We have carried out the structure analysis of Bi-induced (1x1) surface by using low-energy ion scattering spectroscopy technique. We have shown that the (1x1) surface is induced by Bi atoms with periodicity of bulk-like Si (100) -1x1, however, there are many Bi vacancies in the ordered structure with the (1x1) periodicity.3, Si heterointerface control by low-energy ion beam deposition and scattering :We have newly developed low-energy ion beam deposition system which is integrated into analytical facilities of low-energy ion scattering and low-energy electron diffraction to allow characterization of surfaces with or without ion beam deposition. Preliminary experimental measurements are carried out using a Bi ion source. It is confirmed that Bi ion beams can be obtained in the energy range 50-550eV and that hte Bi ion beam deposition proceeds on Si (100) clean surface by in-situ measurement of low-energy ion scattering spectrometry. Less