A STUDY ON SILICON HETEROINTERFACE FORMATION AND CONTROL BY LOW-ENERGY ION BEAM DEPOSITION

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The semiconductor industry is constantly striving for ever smaller device dimensions. Future high-speed electronic devices may be built up from low-dimensional structures involving layrs and lines as little as a few atomic diameters across. Now, it is becoming possible to discuss on mechanisms of epitaxial growth from the microscopic standpoint, because of rapidly developing field of surface analysis techniques. However, a clear explanation has not been made on detail physics of the hetroepitaxy. It is the purpose of this work to systematically investigate how two-dimensional interface phase controls the heteroepitaxial growth.Three experimental programs were performed in a period of this work. The results obtained are described below.1, Analysis of Si (100) -2x1 : H surface hydrogen :By using low-energy recoil ion spectroscopy technique, we have investigated the structure of Si (100) -1x1 : 2H dihydride and Si (100) -2x1 : H monohydride surfaces. Comparing our experimental results wit … More h computer simulations, we conclude that the H-Si bond angle in the Si (100) -2x1 surface is 65-70ﾟ and that in the Si (100) -1x1 : 2H surface is 55-60ﾟ For the dihydride surface, canted dihydride structure is suggested.2, Analysis of Bi-induced (1x1) structure of the Si (100) surface :We have carried out the structure analysis of Bi-induced (1x1) surface by using low-energy ion scattering spectroscopy technique. We have shown that the (1x1) surface is induced by Bi atoms with periodicity of bulk-like Si (100) -1x1, however, there are many Bi vacancies in the ordered structure with the (1x1) periodicity.3, Si heterointerface control by low-energy ion beam deposition and scattering :We have newly developed low-energy ion beam deposition system which is integrated into analytical facilities of low-energy ion scattering and low-energy electron diffraction to allow characterization of surfaces with or without ion beam deposition. Preliminary experimental measurements are carried out using a Bi ion source. It is confirmed that Bi ion beams can be obtained in the energy range 50-550eV and that hte Bi ion beam deposition proceeds on Si (100) clean surface by in-situ measurement of low-energy ion scattering spectrometry. Less